Source: Microelectronics Reliability. Unidade: IF
Assunto: RADIAÇÃO IONIZANTE
ABNT
ALLEGRO, Paula Rangel Pestana et al. Unsupervised machine learning application to identify single-event transients (SETs) from noise events in MOSFET transistor ionizing radiation effects. Microelectronics Reliability, v. 142, 2023Tradução . . Disponível em: https://doi.org/10.1016/j.microrel.2023.114916. Acesso em: 18 ago. 2024.APA
Allegro, P. R. P., Aguiar, V. Â. P. de, Added, N., Medina, N. H., Macchione, E. L. A., & Alberton, S. G. P. N. (2023). Unsupervised machine learning application to identify single-event transients (SETs) from noise events in MOSFET transistor ionizing radiation effects. Microelectronics Reliability, 142. doi:10.1016/j.microrel.2023.114916NLM
Allegro PRP, Aguiar VÂP de, Added N, Medina NH, Macchione ELA, Alberton SGPN. Unsupervised machine learning application to identify single-event transients (SETs) from noise events in MOSFET transistor ionizing radiation effects [Internet]. Microelectronics Reliability. 2023 ; 142[citado 2024 ago. 18 ] Available from: https://doi.org/10.1016/j.microrel.2023.114916Vancouver
Allegro PRP, Aguiar VÂP de, Added N, Medina NH, Macchione ELA, Alberton SGPN. Unsupervised machine learning application to identify single-event transients (SETs) from noise events in MOSFET transistor ionizing radiation effects [Internet]. Microelectronics Reliability. 2023 ; 142[citado 2024 ago. 18 ] Available from: https://doi.org/10.1016/j.microrel.2023.114916