Optical properties of p-doped dilute nitride semiconductors under electric fields (2017)
Source: Abstract Booklet. Conference titles: Brazilian Workshop on Semiconductor Physics - BWSP. Unidade: IFSC
Subjects: MATERIAIS NANOESTRUTURADOS, SEMICONDUTORES
ABNT
RODRIGUES, Sara C. P. e OLIVEIRA, Thiago F. e SIPAHI, Guilherme Matos. Optical properties of p-doped dilute nitride semiconductors under electric fields. 2017, Anais.. São Paulo: Universidade de São Paulo - Instituto de Física - IFUSP, 2017. Disponível em: http://www.bwsp18.if.usp.br/sites/default/files/book-18bwsp_0.pdf. Acesso em: 13 set. 2024.APA
Rodrigues, S. C. P., Oliveira, T. F., & Sipahi, G. M. (2017). Optical properties of p-doped dilute nitride semiconductors under electric fields. In Abstract Booklet. São Paulo: Universidade de São Paulo - Instituto de Física - IFUSP. Recuperado de http://www.bwsp18.if.usp.br/sites/default/files/book-18bwsp_0.pdfNLM
Rodrigues SCP, Oliveira TF, Sipahi GM. Optical properties of p-doped dilute nitride semiconductors under electric fields [Internet]. Abstract Booklet. 2017 ;[citado 2024 set. 13 ] Available from: http://www.bwsp18.if.usp.br/sites/default/files/book-18bwsp_0.pdfVancouver
Rodrigues SCP, Oliveira TF, Sipahi GM. Optical properties of p-doped dilute nitride semiconductors under electric fields [Internet]. Abstract Booklet. 2017 ;[citado 2024 set. 13 ] Available from: http://www.bwsp18.if.usp.br/sites/default/files/book-18bwsp_0.pdf