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Filtros : "FÍSICA" "Galvão Gobato, Y." "FZEA" Removidos: "Lopes, R A" "SCOLFARO, LUISA MARIA RIBEIRO" "aw" Limpar

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  • Artigo de periodico

    Kinetics of excitonic complexes on tunneling devices (2005)

    Vercik, Andrés; Galvão Gobato, Y.; Camps, I.; Marques, G. E.; Brasil, Maria J. S. P.; Makler, Susana S.

    Source: Physical Review B. Unidade: FZEA

    Subjects: FÍSICA, ÓPTICA, SEMICONDUTORES

    Acesso à fonteAcesso à fonteDOIHow to cite
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    • ABNT

      VERCIK, Andrés et al. Kinetics of excitonic complexes on tunneling devices. Physical Review B, v. 71, n. 7, p. 075310/1-075310/6, 2005Tradução . . Disponível em: https://doi.org/10.1103/physrevb.71.075310. Acesso em: 07 jul. 2024.

    • APA

      Vercik, A., Galvão Gobato, Y., Camps, I., Marques, G. E., Brasil, M. J. S. P., & Makler, S. S. (2005). Kinetics of excitonic complexes on tunneling devices. Physical Review B, 71( 7), 075310/1-075310/6. doi:10.1103/physrevb.71.075310

    • NLM

      Vercik A, Galvão Gobato Y, Camps I, Marques GE, Brasil MJSP, Makler SS. Kinetics of excitonic complexes on tunneling devices [Internet]. Physical Review B. 2005 ; 71( 7): 075310/1-075310/6.[citado 2024 jul. 07 ] Available from: https://doi.org/10.1103/physrevb.71.075310

    • Vancouver

      Vercik A, Galvão Gobato Y, Camps I, Marques GE, Brasil MJSP, Makler SS. Kinetics of excitonic complexes on tunneling devices [Internet]. Physical Review B. 2005 ; 71( 7): 075310/1-075310/6.[citado 2024 jul. 07 ] Available from: https://doi.org/10.1103/physrevb.71.075310

  • Trabalho de evento-anais periodico

    Selective voltage-controlled hole spin in non-magnetic resonant tunneling diodes (2004)

    Bittencourt, A C R; Marques, G. E.; Galvão Gobato, Y.; Vercik, Andrés; Camps, I.; Brasil, M J S P

    Source: Materials Research Society Symposium Proceedings. Conference titles: Spring Meeting - Symposium G - Semiconductor Spintronics. Unidade: FZEA

    Subjects: SEMICONDUTORES, DIODOS, FÍSICA

    How to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas

    • ABNT

      BITTENCOURT, A C R et al. Selective voltage-controlled hole spin in non-magnetic resonant tunneling diodes. Materials Research Society Symposium Proceedings. Warrendale: Materials Research Society. . Acesso em: 07 jul. 2024. , 2004

    • APA

      Bittencourt, A. C. R., Marques, G. E., Galvão Gobato, Y., Vercik, A., Camps, I., & Brasil, M. J. S. P. (2004). Selective voltage-controlled hole spin in non-magnetic resonant tunneling diodes. Materials Research Society Symposium Proceedings. Warrendale: Materials Research Society.

    • NLM

      Bittencourt ACR, Marques GE, Galvão Gobato Y, Vercik A, Camps I, Brasil MJSP. Selective voltage-controlled hole spin in non-magnetic resonant tunneling diodes. Materials Research Society Symposium Proceedings. 2004 ; 825E[citado 2024 jul. 07 ]

    • Vancouver

      Bittencourt ACR, Marques GE, Galvão Gobato Y, Vercik A, Camps I, Brasil MJSP. Selective voltage-controlled hole spin in non-magnetic resonant tunneling diodes. Materials Research Society Symposium Proceedings. 2004 ; 825E[citado 2024 jul. 07 ]
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