Leite, E R; Pontes, F M; Paris, E C; Paskocimas, C A; Lee, E J H; Longo, Elson; Pizani, Paulo Sérgio; Varella, J A; Mastelaro, Valmor Roberto 
Source: Advanced Materials for Optics and Electronics. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
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LEITE, E R et al. Amorphous lead titanate: a new wide-band gap semiconductor with photoluminescence at room temperature. Advanced Materials for Optics and Electronics, v. 10, p. 235-240, 2000Tradução . . Disponível em: https://doi.org/10.1002/1099-0712(200011/12)10:6%3C235::aid-amo409%3E3.0.co;2-6. Acesso em: 19 nov. 2024.APA
Leite, E. R., Pontes, F. M., Paris, E. C., Paskocimas, C. A., Lee, E. J. H., Longo, E., et al. (2000). Amorphous lead titanate: a new wide-band gap semiconductor with photoluminescence at room temperature. Advanced Materials for Optics and Electronics, 10, 235-240. doi:10.1002/1099-0712(200011/12)10:6%3C235::aid-amo409%3E3.0.co;2-6NLM
Leite ER, Pontes FM, Paris EC, Paskocimas CA, Lee EJH, Longo E, Pizani PS, Varella JA, Mastelaro VR. Amorphous lead titanate: a new wide-band gap semiconductor with photoluminescence at room temperature [Internet]. Advanced Materials for Optics and Electronics. 2000 ;10 235-240.[citado 2024 nov. 19 ] Available from: https://doi.org/10.1002/1099-0712(200011/12)10:6%3C235::aid-amo409%3E3.0.co;2-6Vancouver
Leite ER, Pontes FM, Paris EC, Paskocimas CA, Lee EJH, Longo E, Pizani PS, Varella JA, Mastelaro VR. Amorphous lead titanate: a new wide-band gap semiconductor with photoluminescence at room temperature [Internet]. Advanced Materials for Optics and Electronics. 2000 ;10 235-240.[citado 2024 nov. 19 ] Available from: https://doi.org/10.1002/1099-0712(200011/12)10:6%3C235::aid-amo409%3E3.0.co;2-6
