Source: Energy Advances. Unidade: IFSC
Subjects: SEMICONDUTORES, ENERGIA SOLAR, ELETROQUÍMICA
ABNT
CORREA, Andressa dos Santos et al. Interfacial band alignment and photoelectrochemical properties of all-sputtered BiVO4/FeNiOx and BiVO4/FeMnOx p-n heterojunctions. Energy Advances, v. 2, n. Ja 2023, p. 123-136 + supplementary information, 2023Tradução . . Disponível em: https://doi.org/10.1039/d2ya00247g. Acesso em: 18 ago. 2024.APA
Correa, A. dos S., Rabelo, L. G., Santa Rosa, W., Khan, N., Krishnamurthy, S., Khan, S., & Gonçalves, R. V. (2023). Interfacial band alignment and photoelectrochemical properties of all-sputtered BiVO4/FeNiOx and BiVO4/FeMnOx p-n heterojunctions. Energy Advances, 2( Ja 2023), 123-136 + supplementary information. doi:10.1039/d2ya00247gNLM
Correa A dos S, Rabelo LG, Santa Rosa W, Khan N, Krishnamurthy S, Khan S, Gonçalves RV. Interfacial band alignment and photoelectrochemical properties of all-sputtered BiVO4/FeNiOx and BiVO4/FeMnOx p-n heterojunctions [Internet]. Energy Advances. 2023 ; 2( Ja 2023): 123-136 + supplementary information.[citado 2024 ago. 18 ] Available from: https://doi.org/10.1039/d2ya00247gVancouver
Correa A dos S, Rabelo LG, Santa Rosa W, Khan N, Krishnamurthy S, Khan S, Gonçalves RV. Interfacial band alignment and photoelectrochemical properties of all-sputtered BiVO4/FeNiOx and BiVO4/FeMnOx p-n heterojunctions [Internet]. Energy Advances. 2023 ; 2( Ja 2023): 123-136 + supplementary information.[citado 2024 ago. 18 ] Available from: https://doi.org/10.1039/d2ya00247g