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Trabalho de evento-resumo periodico
Topological States Ruled by Stacking Faults in `Bi IND.2´`Se IND.3´ and `Bi IND.2´`Te IND.3´ (2013)
Seixas, Leandro; Abdalla, Leonardo; Schmidt, Tomé; Fazzio, Adalberto; Miwa, Roberto
Source: Abstracts. Conference titles: APS March Meeting. Unidade: IF
Subjects: MATÉRIA CONDENSADA, PROPRIEDADES DOS MATERIAIS
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ABNT
SEIXAS, Leandro et al. Topological States Ruled by Stacking Faults in `Bi IND.2´`Se IND.3´ and `Bi IND.2´`Te IND.3´. Abstracts. Maryland,: APS. Disponível em: http://absimage.aps.org/image/MAR13/MWS_MAR13-2012-005791.pdf. Acesso em: 11 out. 2024. , 2013
APA
Seixas, L., Abdalla, L., Schmidt, T., Fazzio, A., & Miwa, R. (2013). Topological States Ruled by Stacking Faults in `Bi IND.2´`Se IND.3´ and `Bi IND.2´`Te IND.3´. Abstracts. Maryland,: APS. Recuperado de http://absimage.aps.org/image/MAR13/MWS_MAR13-2012-005791.pdf
NLM
Seixas L, Abdalla L, Schmidt T, Fazzio A, Miwa R. Topological States Ruled by Stacking Faults in `Bi IND.2´`Se IND.3´ and `Bi IND.2´`Te IND.3´ [Internet]. Abstracts. 2013 ; 58( 1):[citado 2024 out. 11 ] Available from: http://absimage.aps.org/image/MAR13/MWS_MAR13-2012-005791.pdf
Vancouver
Seixas L, Abdalla L, Schmidt T, Fazzio A, Miwa R. Topological States Ruled by Stacking Faults in `Bi IND.2´`Se IND.3´ and `Bi IND.2´`Te IND.3´ [Internet]. Abstracts. 2013 ; 58( 1):[citado 2024 out. 11 ] Available from: http://absimage.aps.org/image/MAR13/MWS_MAR13-2012-005791.pdf
Trabalho de evento-resumo
Temperature dependent Raman study of the linear thermal expansion: CdS bulk and quantum dot (2011)
Freitas Neto, Ernesto Soares de; Dantas, Noelio Oliveira; Silva, Sebastião Willian da; Morais, Paulo César de; Silva, Marcelo de Assumpção Pereira da ; Moreno, Antônio Jeferson de Deus; Lópes-Richard, Victor; Marques, Gilmar Eugenio; Trallero-Giner, Carlos
Source: Resumos. Conference titles: Encontro de Física. Unidade: IFSC
Subjects: POÇOS QUÂNTICOS, PROPRIEDADES DOS MATERIAIS, VIDRO, ÓPTICA (PROPRIEDADES)
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ABNT
FREITAS NETO, Ernesto Soares de et al. Temperature dependent Raman study of the linear thermal expansion: CdS bulk and quantum dot. 2011, Anais.. São Paulo: Sociedade Brasileira de Física - SBF, 2011. Disponível em: http://www.sbf1.sbfisica.org.br/eventos/enf/2011/sys/resumos/R2904-2.pdf. Acesso em: 11 out. 2024.
APA
Freitas Neto, E. S. de, Dantas, N. O., Silva, S. W. da, Morais, P. C. de, Silva, M. de A. P. da, Moreno, A. J. de D., et al. (2011). Temperature dependent Raman study of the linear thermal expansion: CdS bulk and quantum dot. In Resumos. São Paulo: Sociedade Brasileira de Física - SBF. Recuperado de http://www.sbf1.sbfisica.org.br/eventos/enf/2011/sys/resumos/R2904-2.pdf
NLM
Freitas Neto ES de, Dantas NO, Silva SW da, Morais PC de, Silva M de AP da, Moreno AJ de D, Lópes-Richard V, Marques GE, Trallero-Giner C. Temperature dependent Raman study of the linear thermal expansion: CdS bulk and quantum dot [Internet]. Resumos. 2011 ;[citado 2024 out. 11 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/enf/2011/sys/resumos/R2904-2.pdf
Vancouver
Freitas Neto ES de, Dantas NO, Silva SW da, Morais PC de, Silva M de AP da, Moreno AJ de D, Lópes-Richard V, Marques GE, Trallero-Giner C. Temperature dependent Raman study of the linear thermal expansion: CdS bulk and quantum dot [Internet]. Resumos. 2011 ;[citado 2024 out. 11 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/enf/2011/sys/resumos/R2904-2.pdf
Artigo de periodico
Structural, electronic, and optical properties of "ZrO IND.2" from ab initio calculations (2006)
Garcia, Joelson Cott; Scolfaro, Luisa Maria Ribeiro; Lino, Antonio Tadeu; Freire, V N; Farias, G A; Silva, C C; Alves, H W Leite; Rodrigues, S C P; Silva, E F da
Source: Journal of Applied Physics. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, DIELÉTRICOS, PROPRIEDADES DOS MATERIAIS
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ABNT
GARCIA, Joelson Cott et al. Structural, electronic, and optical properties of "ZrO IND.2" from ab initio calculations. Journal of Applied Physics, v. 100, n. 1, p. 104103-1/104103-9, 2006Tradução . . Disponível em: https://doi.org/10.1063/1.2386967. Acesso em: 11 out. 2024.
APA
Garcia, J. C., Scolfaro, L. M. R., Lino, A. T., Freire, V. N., Farias, G. A., Silva, C. C., et al. (2006). Structural, electronic, and optical properties of "ZrO IND.2" from ab initio calculations. Journal of Applied Physics, 100( 1), 104103-1/104103-9. doi:10.1063/1.2386967
NLM
Garcia JC, Scolfaro LMR, Lino AT, Freire VN, Farias GA, Silva CC, Alves HWL, Rodrigues SCP, Silva EF da. Structural, electronic, and optical properties of "ZrO IND.2" from ab initio calculations [Internet]. Journal of Applied Physics. 2006 ; 100( 1): 104103-1/104103-9.[citado 2024 out. 11 ] Available from: https://doi.org/10.1063/1.2386967
Vancouver
Garcia JC, Scolfaro LMR, Lino AT, Freire VN, Farias GA, Silva CC, Alves HWL, Rodrigues SCP, Silva EF da. Structural, electronic, and optical properties of "ZrO IND.2" from ab initio calculations [Internet]. Journal of Applied Physics. 2006 ; 100( 1): 104103-1/104103-9.[citado 2024 out. 11 ] Available from: https://doi.org/10.1063/1.2386967
Artigo de periodico
Electronic and magnetic properties of Mn-doped InP nanowires from first principles (2006)
Schmidt, T M; Venezuela, P; Arantes Junior, Jeverson Teodoro; Fazzio, Adalberto
Source: Physical Review B. Unidade: IF
Subjects: MATÉRIA CONDENSADA, ESTRUTURA ELETRÔNICA, PROPRIEDADES DOS MATERIAIS, SEMICONDUTORES, FERROMAGNETISMO
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ABNT
SCHMIDT, T M et al. Electronic and magnetic properties of Mn-doped InP nanowires from first principles. Physical Review B, v. 73, n. 23, p. 235330, 2006Tradução . . Disponível em: https://doi.org/10.1103/physrevb.73.235330. Acesso em: 11 out. 2024.
APA
Schmidt, T. M., Venezuela, P., Arantes Junior, J. T., & Fazzio, A. (2006). Electronic and magnetic properties of Mn-doped InP nanowires from first principles. Physical Review B, 73( 23), 235330. doi:10.1103/physrevb.73.235330
NLM
Schmidt TM, Venezuela P, Arantes Junior JT, Fazzio A. Electronic and magnetic properties of Mn-doped InP nanowires from first principles [Internet]. Physical Review B. 2006 ; 73( 23): 235330.[citado 2024 out. 11 ] Available from: https://doi.org/10.1103/physrevb.73.235330
Vancouver
Schmidt TM, Venezuela P, Arantes Junior JT, Fazzio A. Electronic and magnetic properties of Mn-doped InP nanowires from first principles [Internet]. Physical Review B. 2006 ; 73( 23): 235330.[citado 2024 out. 11 ] Available from: https://doi.org/10.1103/physrevb.73.235330
Artigo de periodico
Hydrogen adsorption on carbon-doped boron nitride nanotube (2006)
Baierle, Rogerio Jose; Piquini, P; Schmidt, Tome Mauro; Fazzio, Adalberto
Source: Journal of Physical Chemistry. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, PROPRIEDADES DOS MATERIAIS
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ABNT
BAIERLE, Rogerio Jose et al. Hydrogen adsorption on carbon-doped boron nitride nanotube. Journal of Physical Chemistry, v. 110, n. 42, p. 21184-21188, 2006Tradução . . Disponível em: http://pubs.acs.org/cgi-bin/article.cgi/jpcbfk/2006/110/i42/pdf/jp061587s.pdf. Acesso em: 11 out. 2024.
APA
Baierle, R. J., Piquini, P., Schmidt, T. M., & Fazzio, A. (2006). Hydrogen adsorption on carbon-doped boron nitride nanotube. Journal of Physical Chemistry, 110( 42), 21184-21188. Recuperado de http://pubs.acs.org/cgi-bin/article.cgi/jpcbfk/2006/110/i42/pdf/jp061587s.pdf
NLM
Baierle RJ, Piquini P, Schmidt TM, Fazzio A. Hydrogen adsorption on carbon-doped boron nitride nanotube [Internet]. Journal of Physical Chemistry. 2006 ; 110( 42): 21184-21188.[citado 2024 out. 11 ] Available from: http://pubs.acs.org/cgi-bin/article.cgi/jpcbfk/2006/110/i42/pdf/jp061587s.pdf
Vancouver
Baierle RJ, Piquini P, Schmidt TM, Fazzio A. Hydrogen adsorption on carbon-doped boron nitride nanotube [Internet]. Journal of Physical Chemistry. 2006 ; 110( 42): 21184-21188.[citado 2024 out. 11 ] Available from: http://pubs.acs.org/cgi-bin/article.cgi/jpcbfk/2006/110/i42/pdf/jp061587s.pdf
Trabalho de evento-resumo
Carbon nanotube on Si(100): structural and electronic properties (2003)
Orellana, W; Miwa, R H; Fazzio, Adalberto
Source: Book of Abstract. Conference titles: Brazilian Workshop on Semiconductor Physics. Unidade: IF
Subjects: SEMICONDUTORES, ESTRUTURA ELETRÔNICA, PROPRIEDADES DOS MATERIAIS, NANOTECNOLOGIA
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ABNT
ORELLANA, W e MIWA, R H e FAZZIO, Adalberto. Carbon nanotube on Si(100): structural and electronic properties. 2003, Anais.. Fortaleza: DF/UFC, 2003. . Acesso em: 11 out. 2024.
APA
Orellana, W., Miwa, R. H., & Fazzio, A. (2003). Carbon nanotube on Si(100): structural and electronic properties. In Book of Abstract. Fortaleza: DF/UFC.
NLM
Orellana W, Miwa RH, Fazzio A. Carbon nanotube on Si(100): structural and electronic properties. Book of Abstract. 2003 ;[citado 2024 out. 11 ]
Vancouver
Orellana W, Miwa RH, Fazzio A. Carbon nanotube on Si(100): structural and electronic properties. Book of Abstract. 2003 ;[citado 2024 out. 11 ]
Artigo de periodico
First-principles calculations of carbon nanotubes adsorbed on Si(001) (2003)
Orellana, W; Miwa, R H; Fazzio, Adalberto
Source: Physical Review Letters. Unidade: IF
Subjects: PROPRIEDADES DOS MATERIAIS, ESTRUTURA ELETRÔNICA, NANOTECNOLOGIA
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ABNT
ORELLANA, W e MIWA, R H e FAZZIO, Adalberto. First-principles calculations of carbon nanotubes adsorbed on Si(001). Physical Review Letters, v. 91, n. 16, p. 166802/1-166802/4, 2003Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRLTAO000091000016166802000001&idtype=cvips. Acesso em: 11 out. 2024.
APA
Orellana, W., Miwa, R. H., & Fazzio, A. (2003). First-principles calculations of carbon nanotubes adsorbed on Si(001). Physical Review Letters, 91( 16), 166802/1-166802/4. Recuperado de http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRLTAO000091000016166802000001&idtype=cvips
NLM
Orellana W, Miwa RH, Fazzio A. First-principles calculations of carbon nanotubes adsorbed on Si(001) [Internet]. Physical Review Letters. 2003 ; 91( 16): 166802/1-166802/4.[citado 2024 out. 11 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRLTAO000091000016166802000001&idtype=cvips
Vancouver
Orellana W, Miwa RH, Fazzio A. First-principles calculations of carbon nanotubes adsorbed on Si(001) [Internet]. Physical Review Letters. 2003 ; 91( 16): 166802/1-166802/4.[citado 2024 out. 11 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRLTAO000091000016166802000001&idtype=cvips

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