Source: Journal of Physics: Condensed Matter. Unidade: IF
Assunto: SUPERCONDUTIVIDADE
ABNT
CAVALHEIRO, A et al. Influence of illumination on the quantum mobility of a two-dimensional electron gas in Si 'sigma'-doped 'GaAs/In IND.0.15' 'Ga IND.0.85'As quantum wells. Journal of Physics: Condensed Matter, v. 15, n. 2, p. 121-132, 2003Tradução . . Disponível em: http://ej.iop.org/links/q87/UGqnwPFy6IAHtfZURvYaBg/c30212.pdf. Acesso em: 30 set. 2024.APA
Cavalheiro, A., Silva, E. C. F. da, Quivy, A. A., Takahashi, E. K., Martini, S., Silva, M. J. da, et al. (2003). Influence of illumination on the quantum mobility of a two-dimensional electron gas in Si 'sigma'-doped 'GaAs/In IND.0.15' 'Ga IND.0.85'As quantum wells. Journal of Physics: Condensed Matter, 15( 2), 121-132. Recuperado de http://ej.iop.org/links/q87/UGqnwPFy6IAHtfZURvYaBg/c30212.pdfNLM
Cavalheiro A, Silva ECF da, Quivy AA, Takahashi EK, Martini S, Silva MJ da, Meneses EA, Leite JR. Influence of illumination on the quantum mobility of a two-dimensional electron gas in Si 'sigma'-doped 'GaAs/In IND.0.15' 'Ga IND.0.85'As quantum wells [Internet]. Journal of Physics: Condensed Matter. 2003 ; 15( 2): 121-132.[citado 2024 set. 30 ] Available from: http://ej.iop.org/links/q87/UGqnwPFy6IAHtfZURvYaBg/c30212.pdfVancouver
Cavalheiro A, Silva ECF da, Quivy AA, Takahashi EK, Martini S, Silva MJ da, Meneses EA, Leite JR. Influence of illumination on the quantum mobility of a two-dimensional electron gas in Si 'sigma'-doped 'GaAs/In IND.0.15' 'Ga IND.0.85'As quantum wells [Internet]. Journal of Physics: Condensed Matter. 2003 ; 15( 2): 121-132.[citado 2024 set. 30 ] Available from: http://ej.iop.org/links/q87/UGqnwPFy6IAHtfZURvYaBg/c30212.pdf