Filtros : "Índia" "Department of Chemical Engineering, Konkuk University, Seoul 143-701, Korea" Removidos: " IFSC224" "Departamento de Estatística. Universidade Federal de Pernambuco. Recife, PE" "SBF" Limpar

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  • Source: Journal of Electronic Materials. Unidade: IF

    Subjects: DOSIMETRIA, TERMOLUMINESCÊNCIA, VIDRO

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    • ABNT

      SINGH, Vijay et al. PL and ESR Study on UVB-emitting gadolinium-doped 'BA''MG''AL' IND. 10''O' IND. 17' hexagonal phase obtained by combustion synthesis. Journal of Electronic Materials, v. 47, n. 12 p. 7365-7371, 2018Tradução . . Disponível em: https://doi.org/10.1007/s11664-018-6676-9. Acesso em: 01 out. 2024.
    • APA

      Singh, V., Pathak, M. S., Singh, N., Rao, T. K. G., Jadhav, N. A., Kwon, Y. -W., & Watanabe, S. (2018). PL and ESR Study on UVB-emitting gadolinium-doped 'BA''MG''AL' IND. 10''O' IND. 17' hexagonal phase obtained by combustion synthesis. Journal of Electronic Materials, 47( 12 p. 7365-7371). doi:10.1007/s11664-018-6676-9
    • NLM

      Singh V, Pathak MS, Singh N, Rao TKG, Jadhav NA, Kwon Y-W, Watanabe S. PL and ESR Study on UVB-emitting gadolinium-doped 'BA''MG''AL' IND. 10''O' IND. 17' hexagonal phase obtained by combustion synthesis [Internet]. Journal of Electronic Materials. 2018 ; 47( 12 p. 7365-7371):[citado 2024 out. 01 ] Available from: https://doi.org/10.1007/s11664-018-6676-9
    • Vancouver

      Singh V, Pathak MS, Singh N, Rao TKG, Jadhav NA, Kwon Y-W, Watanabe S. PL and ESR Study on UVB-emitting gadolinium-doped 'BA''MG''AL' IND. 10''O' IND. 17' hexagonal phase obtained by combustion synthesis [Internet]. Journal of Electronic Materials. 2018 ; 47( 12 p. 7365-7371):[citado 2024 out. 01 ] Available from: https://doi.org/10.1007/s11664-018-6676-9
  • Source: Journal of Materials Science: Materials in Electronics. Unidade: IF

    Subjects: DOSIMETRIA, TERMOLUMINESCÊNCIA, VIDRO

    Versão PublicadaAcesso à fonteAcesso à fonteDOIHow to cite
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    • ABNT

      SINGH, Vijay et al. UV radiation emitting 'GD' POT. 3+' activated 'SR' INd. 2''SI''O' INd. 4' host system prepared by sol–gel procedure: structural, electron paramagnetic resonance, and luminescence studies. Journal of Materials Science: Materials in Electronics, v. 29, n. 24, p. 20759-20767, 2018Tradução . . Disponível em: https://doi.org/10.1007/s10854-018-0217-4. Acesso em: 01 out. 2024.
    • APA

      Singh, V., Pathak, M. S., Singh, N., Rao, T. K. G., Kaur, S., Jayasimhadri, M., & Watanabe, S. (2018). UV radiation emitting 'GD' POT. 3+' activated 'SR' INd. 2''SI''O' INd. 4' host system prepared by sol–gel procedure: structural, electron paramagnetic resonance, and luminescence studies. Journal of Materials Science: Materials in Electronics, 29( 24), 20759-20767. doi:10.1007/s10854-018-0217-4
    • NLM

      Singh V, Pathak MS, Singh N, Rao TKG, Kaur S, Jayasimhadri M, Watanabe S. UV radiation emitting 'GD' POT. 3+' activated 'SR' INd. 2''SI''O' INd. 4' host system prepared by sol–gel procedure: structural, electron paramagnetic resonance, and luminescence studies [Internet]. Journal of Materials Science: Materials in Electronics. 2018 ; 29( 24): 20759-20767.[citado 2024 out. 01 ] Available from: https://doi.org/10.1007/s10854-018-0217-4
    • Vancouver

      Singh V, Pathak MS, Singh N, Rao TKG, Kaur S, Jayasimhadri M, Watanabe S. UV radiation emitting 'GD' POT. 3+' activated 'SR' INd. 2''SI''O' INd. 4' host system prepared by sol–gel procedure: structural, electron paramagnetic resonance, and luminescence studies [Internet]. Journal of Materials Science: Materials in Electronics. 2018 ; 29( 24): 20759-20767.[citado 2024 out. 01 ] Available from: https://doi.org/10.1007/s10854-018-0217-4
  • Source: Journal of Materials Science: Materials in Electronics. Unidade: IF

    Subjects: DOSIMETRIA, TERMOLUMINESCÊNCIA, VIDRO

    PrivadoAcesso à fonteAcesso à fonteDOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      SINGH, Vijay et al. PL and ESR of 'GD' POT. 3+' in 'LA''MG''AL' IND. 11''O' IND. 19' phosphors. Journal of Materials Science: Materials in Electronics, v. 29, n. 6, p. 4632-4638, 2018Tradução . . Disponível em: https://doi.org/10.1007/s10854-017-8414-0. Acesso em: 01 out. 2024.
    • APA

      Singh, V., Pathak, M. S., Singh, N., Rao, T. K. G., Singh, V., Singh, P. K., et al. (2018). PL and ESR of 'GD' POT. 3+' in 'LA''MG''AL' IND. 11''O' IND. 19' phosphors. Journal of Materials Science: Materials in Electronics, 29( 6), 4632-4638. doi:10.1007/s10854-017-8414-0
    • NLM

      Singh V, Pathak MS, Singh N, Rao TKG, Singh V, Singh PK, Kwon Y-W, Watanabe S. PL and ESR of 'GD' POT. 3+' in 'LA''MG''AL' IND. 11''O' IND. 19' phosphors [Internet]. Journal of Materials Science: Materials in Electronics. 2018 ; 29( 6): 4632-4638.[citado 2024 out. 01 ] Available from: https://doi.org/10.1007/s10854-017-8414-0
    • Vancouver

      Singh V, Pathak MS, Singh N, Rao TKG, Singh V, Singh PK, Kwon Y-W, Watanabe S. PL and ESR of 'GD' POT. 3+' in 'LA''MG''AL' IND. 11''O' IND. 19' phosphors [Internet]. Journal of Materials Science: Materials in Electronics. 2018 ; 29( 6): 4632-4638.[citado 2024 out. 01 ] Available from: https://doi.org/10.1007/s10854-017-8414-0

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