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Artigo de periodico
Experimental study of MISHEMT from 450 K down to 200 K for analog applications (2023)
Perina, Welder Fernandes; Martino, João Antonio ; Simoen, Eddy ; Peralagu, Uthayasankaran; Collaert, Nadine ; Agopian, Paula Ghedini Der
Source: Solid State Electronics. Unidade: EP
Subjects: TRANSISTORES, CIRCUITOS ANALÓGICOS, SEMICONDUTORES
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ABNT
PERINA, Welder Fernandes et al. Experimental study of MISHEMT from 450 K down to 200 K for analog applications. Solid State Electronics, v. 208, p. 1-4, 2023Tradução . . Disponível em: https://doi.org/10.1016/j.sse.2023.108742. Acesso em: 29 set. 2024.
APA
Perina, W. F., Martino, J. A., Simoen, E., Peralagu, U., Collaert, N., & Agopian, P. G. D. (2023). Experimental study of MISHEMT from 450 K down to 200 K for analog applications. Solid State Electronics, 208, 1-4. doi:10.1016/j.sse.2023.108742
NLM
Perina WF, Martino JA, Simoen E, Peralagu U, Collaert N, Agopian PGD. Experimental study of MISHEMT from 450 K down to 200 K for analog applications [Internet]. Solid State Electronics. 2023 ; 208 1-4.[citado 2024 set. 29 ] Available from: https://doi.org/10.1016/j.sse.2023.108742
Vancouver
Perina WF, Martino JA, Simoen E, Peralagu U, Collaert N, Agopian PGD. Experimental study of MISHEMT from 450 K down to 200 K for analog applications [Internet]. Solid State Electronics. 2023 ; 208 1-4.[citado 2024 set. 29 ] Available from: https://doi.org/10.1016/j.sse.2023.108742
Artigo de periodico
Experimental study of MISHEMT from 450k down to 200 k for analog applications (2023)
Perina, Welder Fernandes; Martino, João Antonio ; Simoen, Eddy ; Peralagu, Uthayasankaran; Collaert, Nadine ; Agopian, Paula Ghedini Der
Source: Solid State Electronics. Unidade: EP
Subjects: TRANSISTORES, CIRCUITOS ANALÓGICOS, TEMPERATURA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PERINA, Welder Fernandes et al. Experimental study of MISHEMT from 450k down to 200 k for analog applications. Solid State Electronics, v. 208, p. 1-4, 2023Tradução . . Disponível em: https://doi.org/10.1016/j.sse.2023.108742. Acesso em: 29 set. 2024.
APA
Perina, W. F., Martino, J. A., Simoen, E., Peralagu, U., Collaert, N., & Agopian, P. G. D. (2023). Experimental study of MISHEMT from 450k down to 200 k for analog applications. Solid State Electronics, 208, 1-4. doi:10.1016/j.sse.2023.108742
NLM
Perina WF, Martino JA, Simoen E, Peralagu U, Collaert N, Agopian PGD. Experimental study of MISHEMT from 450k down to 200 k for analog applications [Internet]. Solid State Electronics. 2023 ; 208 1-4.[citado 2024 set. 29 ] Available from: https://doi.org/10.1016/j.sse.2023.108742
Vancouver
Perina WF, Martino JA, Simoen E, Peralagu U, Collaert N, Agopian PGD. Experimental study of MISHEMT from 450k down to 200 k for analog applications [Internet]. Solid State Electronics. 2023 ; 208 1-4.[citado 2024 set. 29 ] Available from: https://doi.org/10.1016/j.sse.2023.108742
Trabalho de evento
Study of the effect of multiple conductions on threshold voltage in a MIS-HEMT from 450 K down to 200 K (2023)
Perina, Welder Fernandes; Martino, João Antonio ; Simoen, Eddy ; Peralagu, Uthayasankaran; Collaert, Nadine ; Agopian, Paula Ghedini Der
Source: SBMicro. Conference titles: Symposium on Microelectronics Technology and Devices. Unidade: EP
Subjects: TRANSISTORES, SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PERINA, Welder Fernandes et al. Study of the effect of multiple conductions on threshold voltage in a MIS-HEMT from 450 K down to 200 K. 2023, Anais.. [Piscataway, N.J.]: IEEE, 2023. Disponível em: https://doi.org/10.1109/SBMicro60499.2023.10302604. Acesso em: 29 set. 2024.
APA
Perina, W. F., Martino, J. A., Simoen, E., Peralagu, U., Collaert, N., & Agopian, P. G. D. (2023). Study of the effect of multiple conductions on threshold voltage in a MIS-HEMT from 450 K down to 200 K. In SBMicro. [Piscataway, N.J.]: IEEE. doi:10.1109/SBMicro60499.2023.10302604
NLM
Perina WF, Martino JA, Simoen E, Peralagu U, Collaert N, Agopian PGD. Study of the effect of multiple conductions on threshold voltage in a MIS-HEMT from 450 K down to 200 K [Internet]. SBMicro. 2023 ;[citado 2024 set. 29 ] Available from: https://doi.org/10.1109/SBMicro60499.2023.10302604
Vancouver
Perina WF, Martino JA, Simoen E, Peralagu U, Collaert N, Agopian PGD. Study of the effect of multiple conductions on threshold voltage in a MIS-HEMT from 450 K down to 200 K [Internet]. SBMicro. 2023 ;[citado 2024 set. 29 ] Available from: https://doi.org/10.1109/SBMicro60499.2023.10302604
Artigo de periodico
MISHEMT intrinsic voltage gain under multiple channel output characteristics (2023)
Canales, Bruno Godoy; Perina, Welder Fernandes; Martino, João Antonio ; Simoen, Eddy ; Peralagu, Uthayasankaran; Collaert, Nadine ; Agopian, Paula Ghedini Der
Source: Semiconductor Science and Technology. Unidade: EP
Subjects: TRANSISTORES, SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
CANALES, Bruno Godoy et al. MISHEMT intrinsic voltage gain under multiple channel output characteristics. Semiconductor Science and Technology, v. 38, n. 11, p. 1-6, 2023Tradução . . Disponível em: https://doi.org/10.1088/1361-6641/acfa1f. Acesso em: 29 set. 2024.
APA
Canales, B. G., Perina, W. F., Martino, J. A., Simoen, E., Peralagu, U., Collaert, N., & Agopian, P. G. D. (2023). MISHEMT intrinsic voltage gain under multiple channel output characteristics. Semiconductor Science and Technology, 38( 11), 1-6. doi:10.1088/1361-6641/acfa1f
NLM
Canales BG, Perina WF, Martino JA, Simoen E, Peralagu U, Collaert N, Agopian PGD. MISHEMT intrinsic voltage gain under multiple channel output characteristics [Internet]. Semiconductor Science and Technology. 2023 ; 38( 11): 1-6.[citado 2024 set. 29 ] Available from: https://doi.org/10.1088/1361-6641/acfa1f
Vancouver
Canales BG, Perina WF, Martino JA, Simoen E, Peralagu U, Collaert N, Agopian PGD. MISHEMT intrinsic voltage gain under multiple channel output characteristics [Internet]. Semiconductor Science and Technology. 2023 ; 38( 11): 1-6.[citado 2024 set. 29 ] Available from: https://doi.org/10.1088/1361-6641/acfa1f
Artigo de periodico
The impact of the temperature on In0.53Ga0.47As nTFETs (2018)
Bordallo, Caio Cesar Mendes ; Mocuta, Dan; Collaert, Nadine ; Alian, A; Simoen, Eddy ; Claeys, Cor ; Agopian, Paula Ghedini Der ; Martino, João Antonio ; Rooyackers, Rita; Mols, Yannick; Van Dooren, A; Verhulst, Anne S; Lin, D
Source: Composants nanoélectroniques. Unidade: EP
Assunto: SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
BORDALLO, Caio Cesar Mendes et al. The impact of the temperature on In0.53Ga0.47As nTFETs. Composants nanoélectroniques, v. 18, n. 1, 2018Tradução . . Disponível em: https://doi.org/10.21494/iste.op.2018.0224. Acesso em: 29 set. 2024.
APA
Bordallo, C. C. M., Mocuta, D., Collaert, N., Alian, A., Simoen, E., Claeys, C., et al. (2018). The impact of the temperature on In0.53Ga0.47As nTFETs. Composants nanoélectroniques, 18( 1). doi:10.21494/iste.op.2018.0224
NLM
Bordallo CCM, Mocuta D, Collaert N, Alian A, Simoen E, Claeys C, Agopian PGD, Martino JA, Rooyackers R, Mols Y, Van Dooren A, Verhulst AS, Lin D. The impact of the temperature on In0.53Ga0.47As nTFETs [Internet]. Composants nanoélectroniques. 2018 ;18( 1):[citado 2024 set. 29 ] Available from: https://doi.org/10.21494/iste.op.2018.0224
Vancouver
Bordallo CCM, Mocuta D, Collaert N, Alian A, Simoen E, Claeys C, Agopian PGD, Martino JA, Rooyackers R, Mols Y, Van Dooren A, Verhulst AS, Lin D. The impact of the temperature on In0.53Ga0.47As nTFETs [Internet]. Composants nanoélectroniques. 2018 ;18( 1):[citado 2024 set. 29 ] Available from: https://doi.org/10.21494/iste.op.2018.0224
Trabalho de evento
UTBOX SOI devices with high-k gate dielectric under analog performance (2012)
Galeti, Milene; Rodrigues, Michele; Aoulaiche, Marc; Collaert, Nadine ; Simoen, Eddy ; Claeys, Cor ; Martino, João Antonio
Source: Microelectronics technology and devices, SBMicro. Conference titles: International Symposium on Microelectronics Technology and Devices. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GALETI, Milene et al. UTBOX SOI devices with high-k gate dielectric under analog performance. 2012, Anais.. Pennington: Escola Politécnica, Universidade de São Paulo, 2012. Disponível em: https://doi.org/10.1149/04901.0119ecst. Acesso em: 29 set. 2024.
APA
Galeti, M., Rodrigues, M., Aoulaiche, M., Collaert, N., Simoen, E., Claeys, C., & Martino, J. A. (2012). UTBOX SOI devices with high-k gate dielectric under analog performance. In Microelectronics technology and devices, SBMicro. Pennington: Escola Politécnica, Universidade de São Paulo. doi:10.1149/04901.0119ecst
NLM
Galeti M, Rodrigues M, Aoulaiche M, Collaert N, Simoen E, Claeys C, Martino JA. UTBOX SOI devices with high-k gate dielectric under analog performance [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2024 set. 29 ] Available from: https://doi.org/10.1149/04901.0119ecst
Vancouver
Galeti M, Rodrigues M, Aoulaiche M, Collaert N, Simoen E, Claeys C, Martino JA. UTBOX SOI devices with high-k gate dielectric under analog performance [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2024 set. 29 ] Available from: https://doi.org/10.1149/04901.0119ecst
Artigo de periodico
Analog performance of SOI nFinFETs with different TiN gate electrode thickness (2010)
Galeti, Milene; Rodrigues, Michele; Collaert, Nadine ; Simoen, Eddy ; Claeys, Cor ; Martino, João Antonio
Source: Microelectronics Technology and Devices - SBMicro 2010. Unidade: EP
Assunto: TRANSISTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GALETI, Milene et al. Analog performance of SOI nFinFETs with different TiN gate electrode thickness. Microelectronics Technology and Devices - SBMicro 2010, v. 31, n. 1, p. 59-65, 2010Tradução . . Disponível em: https://doi.org/10.1149/1.3474142. Acesso em: 29 set. 2024.
APA
Galeti, M., Rodrigues, M., Collaert, N., Simoen, E., Claeys, C., & Martino, J. A. (2010). Analog performance of SOI nFinFETs with different TiN gate electrode thickness. Microelectronics Technology and Devices - SBMicro 2010, 31( 1), 59-65. doi:10.1149/1.3474142
NLM
Galeti M, Rodrigues M, Collaert N, Simoen E, Claeys C, Martino JA. Analog performance of SOI nFinFETs with different TiN gate electrode thickness [Internet]. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 59-65.[citado 2024 set. 29 ] Available from: https://doi.org/10.1149/1.3474142
Vancouver
Galeti M, Rodrigues M, Collaert N, Simoen E, Claeys C, Martino JA. Analog performance of SOI nFinFETs with different TiN gate electrode thickness [Internet]. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 59-65.[citado 2024 set. 29 ] Available from: https://doi.org/10.1149/1.3474142

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