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Filtros : "SEMICONDUTORES" "IF-FMT" Removidos: " IQ009" "FSP-HNT" "SANTOS, REGINA HELENA DE ALMEIDA" Limpar

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  • Artigo de periodico

    Magnetic field effect on diffusion of photogenerated holes in a mesoscopic GaAs channel (2024)

    Pusep, Yuri A ; Teodoro, Marcio Daldin ; Patricio, Marco Antonio Tito ; Jacobsen, Gabriel Marques ; Gusev, Gennady ; Bakarov, Askhat

    Source: Physical Review B. Unidades: IFSC, IF

    Subjects: POÇOS QUÂNTICOS, SEMICONDUTORES, CAMPO MAGNÉTICO, FÍSICA MODERNA

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      PUSEP, Yuri A et al. Magnetic field effect on diffusion of photogenerated holes in a mesoscopic GaAs channel. Physical Review B, v. 109, n. 7, p. 075429-1-075429-6, 2024Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.109.075429. Acesso em: 11 nov. 2024.

    • APA

      Pusep, Y. A., Teodoro, M. D., Patricio, M. A. T., Jacobsen, G. M., Gusev, G., & Bakarov, A. (2024). Magnetic field effect on diffusion of photogenerated holes in a mesoscopic GaAs channel. Physical Review B, 109( 7), 075429-1-075429-6. doi:10.1103/PhysRevB.109.075429

    • NLM

      Pusep YA, Teodoro MD, Patricio MAT, Jacobsen GM, Gusev G, Bakarov A. Magnetic field effect on diffusion of photogenerated holes in a mesoscopic GaAs channel [Internet]. Physical Review B. 2024 ; 109( 7): 075429-1-075429-6.[citado 2024 nov. 11 ] Available from: https://doi.org/10.1103/PhysRevB.109.075429

    • Vancouver

      Pusep YA, Teodoro MD, Patricio MAT, Jacobsen GM, Gusev G, Bakarov A. Magnetic field effect on diffusion of photogenerated holes in a mesoscopic GaAs channel [Internet]. Physical Review B. 2024 ; 109( 7): 075429-1-075429-6.[citado 2024 nov. 11 ] Available from: https://doi.org/10.1103/PhysRevB.109.075429

  • Artigo de periodico

    Magnetic field breakdown of electron hydrodynamics (2024)

    Patricio, Marco Antonio Tito ; Jacobsen, Gabriel Marques ; Oliveira, Vinicius Andrade de ; Teodoro, Marcio Daldin ; Gusev, Gennady ; Bakarov, Askhat ; Pusep, Yuri A

    Source: Physical Review B. Unidades: IF, IFSC

    Subjects: FOTOLUMINESCÊNCIA, CAMPO ELETROMAGNÉTICO, SEMICONDUTORES

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      PATRICIO, Marco Antonio Tito et al. Magnetic field breakdown of electron hydrodynamics. Physical Review B, v. 110, n. 4, p. 45411-1-45411-5, 2024Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.110.045411. Acesso em: 11 nov. 2024.

    • APA

      Patricio, M. A. T., Jacobsen, G. M., Oliveira, V. A. de, Teodoro, M. D., Gusev, G., Bakarov, A., & Pusep, Y. A. (2024). Magnetic field breakdown of electron hydrodynamics. Physical Review B, 110( 4), 45411-1-45411-5. doi:10.1103/PhysRevB.110.045411

    • NLM

      Patricio MAT, Jacobsen GM, Oliveira VA de, Teodoro MD, Gusev G, Bakarov A, Pusep YA. Magnetic field breakdown of electron hydrodynamics [Internet]. Physical Review B. 2024 ; 110( 4): 45411-1-45411-5.[citado 2024 nov. 11 ] Available from: https://doi.org/10.1103/PhysRevB.110.045411

    • Vancouver

      Patricio MAT, Jacobsen GM, Oliveira VA de, Teodoro MD, Gusev G, Bakarov A, Pusep YA. Magnetic field breakdown of electron hydrodynamics [Internet]. Physical Review B. 2024 ; 110( 4): 45411-1-45411-5.[citado 2024 nov. 11 ] Available from: https://doi.org/10.1103/PhysRevB.110.045411

  • Artigo de periodico

    Hydrodynamics of electron-hole fluid photogenerated in a mesoscopic two-dimensional channel (2024)

    Patricio, Marco Antonio Tito ; Jacobsen, Gabriel Marques ; Teodoro, Marcio Daldin ; Gusev, Gennady ; Bakarov, Askhat ; Pusep, Yuri A

    Source: Physical Review B. Unidades: IF, IFSC

    Subjects: POÇOS QUÂNTICOS, SEMICONDUTORES, CAMPO MAGNÉTICO

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      PATRICIO, Marco Antonio Tito et al. Hydrodynamics of electron-hole fluid photogenerated in a mesoscopic two-dimensional channel. Physical Review B, v. 109, n. 12, p. L121401-1-L121401-6, 2024Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.109.L121401. Acesso em: 11 nov. 2024.

    • APA

      Patricio, M. A. T., Jacobsen, G. M., Teodoro, M. D., Gusev, G., Bakarov, A., & Pusep, Y. A. (2024). Hydrodynamics of electron-hole fluid photogenerated in a mesoscopic two-dimensional channel. Physical Review B, 109( 12), L121401-1-L121401-6. doi:10.1103/PhysRevB.109.L121401

    • NLM

      Patricio MAT, Jacobsen GM, Teodoro MD, Gusev G, Bakarov A, Pusep YA. Hydrodynamics of electron-hole fluid photogenerated in a mesoscopic two-dimensional channel [Internet]. Physical Review B. 2024 ; 109( 12): L121401-1-L121401-6.[citado 2024 nov. 11 ] Available from: https://doi.org/10.1103/PhysRevB.109.L121401

    • Vancouver

      Patricio MAT, Jacobsen GM, Teodoro MD, Gusev G, Bakarov A, Pusep YA. Hydrodynamics of electron-hole fluid photogenerated in a mesoscopic two-dimensional channel [Internet]. Physical Review B. 2024 ; 109( 12): L121401-1-L121401-6.[citado 2024 nov. 11 ] Available from: https://doi.org/10.1103/PhysRevB.109.L121401

  • Artigo de periodico

    Detection of water contaminants by organic transistors as gas sensors in a bottom-gate/bottom-contact cross-linked structure (2023)

    Izquierdo, Jose Enrique Eirez ; Cavallari, Marco Roberto ; García, Dennis Cabrera ; Fonseca, Fernando Josepetti ; Quivy, Alain André

    Source: Sensors. Unidades: EP, IF

    Subjects: SEMICONDUTORES, FILMES FINOS, ESPECTROSCOPIA

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      IZQUIERDO, Jose Enrique Eirez et al. Detection of water contaminants by organic transistors as gas sensors in a bottom-gate/bottom-contact cross-linked structure. Sensors, v. 23, n. 18, 2023Tradução . . Disponível em: https://doi.org/10.3390/s23187981. Acesso em: 11 nov. 2024.

    • APA

      Izquierdo, J. E. E., Cavallari, M. R., García, D. C., Fonseca, F. J., & Quivy, A. A. (2023). Detection of water contaminants by organic transistors as gas sensors in a bottom-gate/bottom-contact cross-linked structure. Sensors, 23( 18). doi:10.3390/s23187981

    • NLM

      Izquierdo JEE, Cavallari MR, García DC, Fonseca FJ, Quivy AA. Detection of water contaminants by organic transistors as gas sensors in a bottom-gate/bottom-contact cross-linked structure [Internet]. Sensors. 2023 ; 23( 18):[citado 2024 nov. 11 ] Available from: https://doi.org/10.3390/s23187981

    • Vancouver

      Izquierdo JEE, Cavallari MR, García DC, Fonseca FJ, Quivy AA. Detection of water contaminants by organic transistors as gas sensors in a bottom-gate/bottom-contact cross-linked structure [Internet]. Sensors. 2023 ; 23( 18):[citado 2024 nov. 11 ] Available from: https://doi.org/10.3390/s23187981

  • Artigo de periodico

    Multifractal conductance fluctuations of helical edge states (2023)

    Olshanetsky, E. B.; Gusev, Gennady ; Levine, Alexandre ; Kvon, Z. D.; Armand, Johnnier Perez

    Source: Physical Review Letters. Unidade: IF

    Assunto: SEMICONDUTORES

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      OLSHANETSKY, E. B. et al. Multifractal conductance fluctuations of helical edge states. Physical Review Letters, v. 131, n. 7, p. 076301, 2023Tradução . . Disponível em: https://doi.org/10.1103/PhysRevLett.131.076301. Acesso em: 11 nov. 2024.

    • APA

      Olshanetsky, E. B., Gusev, G., Levine, A., Kvon, Z. D., & Armand, J. P. (2023). Multifractal conductance fluctuations of helical edge states. Physical Review Letters, 131( 7), 076301. doi:10.1103/PhysRevLett.131.076301

    • NLM

      Olshanetsky EB, Gusev G, Levine A, Kvon ZD, Armand JP. Multifractal conductance fluctuations of helical edge states [Internet]. Physical Review Letters. 2023 ; 131( 7): 076301.[citado 2024 nov. 11 ] Available from: https://doi.org/10.1103/PhysRevLett.131.076301

    • Vancouver

      Olshanetsky EB, Gusev G, Levine A, Kvon ZD, Armand JP. Multifractal conductance fluctuations of helical edge states [Internet]. Physical Review Letters. 2023 ; 131( 7): 076301.[citado 2024 nov. 11 ] Available from: https://doi.org/10.1103/PhysRevLett.131.076301

  • Trabalho de evento

    On the importance of atom probe tomography for the development of new nanoscale devices (2022)

    Santos, Thales Borrely dos ; Huang, Tao-Yu; Yang, Yu-Chen; Goldman, Rachel S; Quivy, Alain André

    Conference titles: Symposium on Microelectronics Technology and Devices (SBMicro). Unidade: IF

    Subjects: TOMOGRAFIA, SEMICONDUTORES

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      SANTOS, Thales Borrely dos et al. On the importance of atom probe tomography for the development of new nanoscale devices. 2022, Anais.. New York: IEEE, 2022. Disponível em: https://doi.org/10.1109/SBMICRO55822.2022.9881039. Acesso em: 11 nov. 2024.

    • APA

      Santos, T. B. dos, Huang, T. -Y., Yang, Y. -C., Goldman, R. S., & Quivy, A. A. (2022). On the importance of atom probe tomography for the development of new nanoscale devices. In . New York: IEEE. doi:10.1109/SBMICRO55822.2022.9881039

    • NLM

      Santos TB dos, Huang T-Y, Yang Y-C, Goldman RS, Quivy AA. On the importance of atom probe tomography for the development of new nanoscale devices [Internet]. 2022 ;[citado 2024 nov. 11 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9881039

    • Vancouver

      Santos TB dos, Huang T-Y, Yang Y-C, Goldman RS, Quivy AA. On the importance of atom probe tomography for the development of new nanoscale devices [Internet]. 2022 ;[citado 2024 nov. 11 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9881039

  • Curadoria

    Brazilian Workshop on Semiconductor Physics - BWSP, 20 (2022)

    Miranda, Caetano Rodrigues ; Sipahi, Guilherme Matos (cur) ; Assali, Lucy Vitoria Credidio (cur) ; Silva, Luis Gregorio Godoy de Vasconcellos Dias da (cur)

    Unidades: IF, IFSC

    Subjects: SEMICONDUTORES, FÍSICA TEÓRICA

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    • ABNT

      MIRANDA, Caetano Rodrigues. Brazilian Workshop on Semiconductor Physics - BWSP, 20. . São José dos Campos: Instituto Tecnológico de Aeronáutica - ITA. . Acesso em: 11 nov. 2024. , 2022

    • APA

      Miranda, C. R. (2022). Brazilian Workshop on Semiconductor Physics - BWSP, 20. São José dos Campos: Instituto Tecnológico de Aeronáutica - ITA.

    • NLM

      Miranda CR. Brazilian Workshop on Semiconductor Physics - BWSP, 20. 2022 ;[citado 2024 nov. 11 ]

    • Vancouver

      Miranda CR. Brazilian Workshop on Semiconductor Physics - BWSP, 20. 2022 ;[citado 2024 nov. 11 ]

  • Artigo de periodico

    Insights into the aftereffects phenomenon in solids based on DFT and time-differential perturbed γ−γ angular correlation studies in 111In (→ 111Cd)-doped tin oxides (2022)

    Darriba, G N ; Muñoz, Emiliano L ; Richard, Diego ; Ayala, Alejandro Pedro ; Carbonari, A W ; Petrilli, Helena Maria ; Renteria, M

    Source: Physical Review B. Unidade: IF

    Assunto: SEMICONDUTORES

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      DARRIBA, G N et al. Insights into the aftereffects phenomenon in solids based on DFT and time-differential perturbed γ−γ angular correlation studies in 111In (→ 111Cd)-doped tin oxides. Physical Review B, v. 105, 2022Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.105.195201. Acesso em: 11 nov. 2024.

    • APA

      Darriba, G. N., Muñoz, E. L., Richard, D., Ayala, A. P., Carbonari, A. W., Petrilli, H. M., & Renteria, M. (2022). Insights into the aftereffects phenomenon in solids based on DFT and time-differential perturbed γ−γ angular correlation studies in 111In (→ 111Cd)-doped tin oxides. Physical Review B, 105. doi:10.1103/PhysRevB.105.195201

    • NLM

      Darriba GN, Muñoz EL, Richard D, Ayala AP, Carbonari AW, Petrilli HM, Renteria M. Insights into the aftereffects phenomenon in solids based on DFT and time-differential perturbed γ−γ angular correlation studies in 111In (→ 111Cd)-doped tin oxides [Internet]. Physical Review B. 2022 ; 105[citado 2024 nov. 11 ] Available from: https://doi.org/10.1103/PhysRevB.105.195201

    • Vancouver

      Darriba GN, Muñoz EL, Richard D, Ayala AP, Carbonari AW, Petrilli HM, Renteria M. Insights into the aftereffects phenomenon in solids based on DFT and time-differential perturbed γ−γ angular correlation studies in 111In (→ 111Cd)-doped tin oxides [Internet]. Physical Review B. 2022 ; 105[citado 2024 nov. 11 ] Available from: https://doi.org/10.1103/PhysRevB.105.195201

  • Relatorio tecnico

    Investigation of role of antisite disorder in the pristine cage compound 'FE''GA' IND. 3' (2022)

    Ribeiro, Cauê Kaufmann ; Mello, Luiz Adolfo de; Cornejo, Daniel Reinaldo ; Silva Neto, M. B.; Fogh, E.; Rønnow, H. M.; Martelli, Valentina ; Jimenez, Julio Antonio Larrea

    Unidade: IF

    Subjects: SEMICONDUTORES, PARAMAGNETISMO

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      RIBEIRO, Cauê Kaufmann et al. Investigation of role of antisite disorder in the pristine cage compound 'FE''GA' IND. 3'. . São Paulo: Instituto de Física, Universidade de São Paulo. Disponível em: https://arxiv.org/ftp/arxiv/papers/2208/2208.09064.pdf. Acesso em: 11 nov. 2024. , 2022

    • APA

      Ribeiro, C. K., Mello, L. A. de, Cornejo, D. R., Silva Neto, M. B., Fogh, E., Rønnow, H. M., et al. (2022). Investigation of role of antisite disorder in the pristine cage compound 'FE''GA' IND. 3'. São Paulo: Instituto de Física, Universidade de São Paulo. Recuperado de https://arxiv.org/ftp/arxiv/papers/2208/2208.09064.pdf

    • NLM

      Ribeiro CK, Mello LA de, Cornejo DR, Silva Neto MB, Fogh E, Rønnow HM, Martelli V, Jimenez JAL. Investigation of role of antisite disorder in the pristine cage compound 'FE''GA' IND. 3' [Internet]. 2022 ;[citado 2024 nov. 11 ] Available from: https://arxiv.org/ftp/arxiv/papers/2208/2208.09064.pdf

    • Vancouver

      Ribeiro CK, Mello LA de, Cornejo DR, Silva Neto MB, Fogh E, Rønnow HM, Martelli V, Jimenez JAL. Investigation of role of antisite disorder in the pristine cage compound 'FE''GA' IND. 3' [Internet]. 2022 ;[citado 2024 nov. 11 ] Available from: https://arxiv.org/ftp/arxiv/papers/2208/2208.09064.pdf

  • Artigo de periodico

    Excitonic effects in graphene-like C3N (2022)

    Bonacci, Miki ; Zanfrognini, Matteo ; Molinari, Elisa ; Ruini, Alice; Caldas Marilia Junqueira ; Ferretti, Andrea ; Varsano, Daniele

    Source: Physical Review Materials. Unidade: IF

    Assunto: SEMICONDUTORES

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      BONACCI, Miki et al. Excitonic effects in graphene-like C3N. Physical Review Materials, v. 6, n. 3, 2022Tradução . . Disponível em: https://doi.org/10.1103/PhysRevMaterials.6.034009. Acesso em: 11 nov. 2024.

    • APA

      Bonacci, M., Zanfrognini, M., Molinari, E., Ruini, A., Caldas Marilia Junqueira,, Ferretti, A., & Varsano, D. (2022). Excitonic effects in graphene-like C3N. Physical Review Materials, 6( 3). doi:10.1103/PhysRevMaterials.6.034009

    • NLM

      Bonacci M, Zanfrognini M, Molinari E, Ruini A, Caldas Marilia Junqueira, Ferretti A, Varsano D. Excitonic effects in graphene-like C3N [Internet]. Physical Review Materials. 2022 ; 6( 3):[citado 2024 nov. 11 ] Available from: https://doi.org/10.1103/PhysRevMaterials.6.034009

    • Vancouver

      Bonacci M, Zanfrognini M, Molinari E, Ruini A, Caldas Marilia Junqueira, Ferretti A, Varsano D. Excitonic effects in graphene-like C3N [Internet]. Physical Review Materials. 2022 ; 6( 3):[citado 2024 nov. 11 ] Available from: https://doi.org/10.1103/PhysRevMaterials.6.034009

  • Artigo de periodico

    A low-cost small-size commercial PIN photodiode: I. Electrical characterisation and low-energy photon spectrometry (2021)

    Malafronte, A. A.; Petri, A. R.; Gonçalves, J. A. C.; Barros, Suelen ; Bueno, Carmen ; Maidana, Nora Lía ; Mangiarotti, A. ; Martins, Marcos ; Quivy, Alain André ; Vanin, Vito

    Source: Radiation Physics and Chemistry. Unidades: IF, IPEN

    Subjects: FOTODETECTORES, SEMICONDUTORES, DIODOS, ESPECTROSCOPIA DE RAIO GAMA, ESPECTROSCOPIA DE RAIO X, SILÍCIO

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      MALAFRONTE, A. A. et al. A low-cost small-size commercial PIN photodiode: I. Electrical characterisation and low-energy photon spectrometry. Radiation Physics and Chemistry, v. 179, 2021Tradução . . Disponível em: https://doi.org/10.1016/j.radphyschem.2020.109103. Acesso em: 11 nov. 2024.

    • APA

      Malafronte, A. A., Petri, A. R., Gonçalves, J. A. C., Barros, S., Bueno, C., Maidana, N. L., et al. (2021). A low-cost small-size commercial PIN photodiode: I. Electrical characterisation and low-energy photon spectrometry. Radiation Physics and Chemistry, 179. doi:10.1016/j.radphyschem.2020.109103

    • NLM

      Malafronte AA, Petri AR, Gonçalves JAC, Barros S, Bueno C, Maidana NL, Mangiarotti A, Martins M, Quivy AA, Vanin V. A low-cost small-size commercial PIN photodiode: I. Electrical characterisation and low-energy photon spectrometry [Internet]. Radiation Physics and Chemistry. 2021 ; 179[citado 2024 nov. 11 ] Available from: https://doi.org/10.1016/j.radphyschem.2020.109103

    • Vancouver

      Malafronte AA, Petri AR, Gonçalves JAC, Barros S, Bueno C, Maidana NL, Mangiarotti A, Martins M, Quivy AA, Vanin V. A low-cost small-size commercial PIN photodiode: I. Electrical characterisation and low-energy photon spectrometry [Internet]. Radiation Physics and Chemistry. 2021 ; 179[citado 2024 nov. 11 ] Available from: https://doi.org/10.1016/j.radphyschem.2020.109103

  • Relatorio tecnico

    Disorder and the effective 'MN'-'MN' exchange interaction in 'GA' IND. 1−x' 'MN' IND. x''AS' diluted magnetic semiconductors (2020)

    Silva, Antonio Jose Roque da ; Santos, Raimundo R. dos; Oliveira, Luiz E.; Fazzio, Adalberto

    Unidade: IF

    Subjects: SEMICONDUTORES, FERROMAGNETISMO

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      SILVA, Antonio Jose Roque da et al. Disorder and the effective 'MN'-'MN' exchange interaction in 'GA' IND. 1−x' 'MN' IND. x''AS' diluted magnetic semiconductors. . São Paulo: Instituto de Física, Universidade de São Paulo. Disponível em: https://arxiv.org/pdf/cond-mat/0505500.pdf. Acesso em: 11 nov. 2024. , 2020

    • APA

      Silva, A. J. R. da, Santos, R. R. dos, Oliveira, L. E., & Fazzio, A. (2020). Disorder and the effective 'MN'-'MN' exchange interaction in 'GA' IND. 1−x' 'MN' IND. x''AS' diluted magnetic semiconductors. São Paulo: Instituto de Física, Universidade de São Paulo. Recuperado de https://arxiv.org/pdf/cond-mat/0505500.pdf

    • NLM

      Silva AJR da, Santos RR dos, Oliveira LE, Fazzio A. Disorder and the effective 'MN'-'MN' exchange interaction in 'GA' IND. 1−x' 'MN' IND. x''AS' diluted magnetic semiconductors [Internet]. 2020 ;[citado 2024 nov. 11 ] Available from: https://arxiv.org/pdf/cond-mat/0505500.pdf

    • Vancouver

      Silva AJR da, Santos RR dos, Oliveira LE, Fazzio A. Disorder and the effective 'MN'-'MN' exchange interaction in 'GA' IND. 1−x' 'MN' IND. x''AS' diluted magnetic semiconductors [Internet]. 2020 ;[citado 2024 nov. 11 ] Available from: https://arxiv.org/pdf/cond-mat/0505500.pdf

  • Relatorio tecnico

    Cobalt-related impurity centers in diamond: electronic properties and hyperfine parameters (2020)

    Mamani, Rolando Larico; Assali, Lucy Vitoria Credidio ; Machado, Wanda Valle Marcondes; Justo Filho, João Francisco

    Unidades: IF, EP

    Assunto: SEMICONDUTORES

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      MAMANI, Rolando Larico et al. Cobalt-related impurity centers in diamond: electronic properties and hyperfine parameters. . São Paulo: Instituto de Física, Universidade de São Paulo. Disponível em: https://arxiv.org/pdf/1307.2866.pdf. Acesso em: 11 nov. 2024. , 2020

    • APA

      Mamani, R. L., Assali, L. V. C., Machado, W. V. M., & Justo Filho, J. F. (2020). Cobalt-related impurity centers in diamond: electronic properties and hyperfine parameters. São Paulo: Instituto de Física, Universidade de São Paulo. Recuperado de https://arxiv.org/pdf/1307.2866.pdf

    • NLM

      Mamani RL, Assali LVC, Machado WVM, Justo Filho JF. Cobalt-related impurity centers in diamond: electronic properties and hyperfine parameters [Internet]. 2020 ;[citado 2024 nov. 11 ] Available from: https://arxiv.org/pdf/1307.2866.pdf

    • Vancouver

      Mamani RL, Assali LVC, Machado WVM, Justo Filho JF. Cobalt-related impurity centers in diamond: electronic properties and hyperfine parameters [Internet]. 2020 ;[citado 2024 nov. 11 ] Available from: https://arxiv.org/pdf/1307.2866.pdf

  • Artigo de periodico

    Organic Dielectric Films for Flexible Transistors as Gas Sensors (2020)

    García, Dennis Cabrera; Eirez Izquierdo, José Enrique ; Cavallari, Marco Roberto ; Quivy, Alain André; Fonseca, Fernando Josepetti

    Source: Journal of Integrated Circuits and Systems. Unidades: IF, EP

    Subjects: ÓPTICA ELETRÔNICA, TRANSISTORES, POLÍMEROS (MATERIAIS), FILMES FINOS, CAPACITORES, DIELÉTRICOS, SEMICONDUTORES

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      GARCÍA, Dennis Cabrera et al. Organic Dielectric Films for Flexible Transistors as Gas Sensors. Journal of Integrated Circuits and Systems, v. 15, n. 2, 2020Tradução . . Disponível em: https://doi.org/10.29292/jics.v15i2.170. Acesso em: 11 nov. 2024.

    • APA

      García, D. C., Eirez Izquierdo, J. E., Cavallari, M. R., Quivy, A. A., & Fonseca, F. J. (2020). Organic Dielectric Films for Flexible Transistors as Gas Sensors. Journal of Integrated Circuits and Systems, 15( 2). doi:10.29292/jics.v15i2.170

    • NLM

      García DC, Eirez Izquierdo JE, Cavallari MR, Quivy AA, Fonseca FJ. Organic Dielectric Films for Flexible Transistors as Gas Sensors [Internet]. Journal of Integrated Circuits and Systems. 2020 ; 15( 2):[citado 2024 nov. 11 ] Available from: https://doi.org/10.29292/jics.v15i2.170

    • Vancouver

      García DC, Eirez Izquierdo JE, Cavallari MR, Quivy AA, Fonseca FJ. Organic Dielectric Films for Flexible Transistors as Gas Sensors [Internet]. Journal of Integrated Circuits and Systems. 2020 ; 15( 2):[citado 2024 nov. 11 ] Available from: https://doi.org/10.29292/jics.v15i2.170

  • Relatorio tecnico

    A possible route to grow a ('MN':'SI' IND. (1−x)''GE' IND. x')-based diluted magnetic semiconductor (2020)

    Silva, Antonio Jose Roque da ; Antonelli, Alex; Fazzio, Adalberto

    Unidade: IF

    Subjects: SEMICONDUTORES, MATERIAIS NANOESTRUTURADOS

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    • ABNT

      SILVA, Antonio Jose Roque da e ANTONELLI, Alex e FAZZIO, Adalberto. A possible route to grow a ('MN':'SI' IND. (1−x)''GE' IND. x')-based diluted magnetic semiconductor. . São Paulo: Instituto de Física, Universidade de São Paulo. Disponível em: https://arxiv.org/pdf/cond-mat/0310770.pdf. Acesso em: 11 nov. 2024. , 2020

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      Silva, A. J. R. da, Antonelli, A., & Fazzio, A. (2020). A possible route to grow a ('MN':'SI' IND. (1−x)''GE' IND. x')-based diluted magnetic semiconductor. São Paulo: Instituto de Física, Universidade de São Paulo. Recuperado de https://arxiv.org/pdf/cond-mat/0310770.pdf

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      Silva AJR da, Antonelli A, Fazzio A. A possible route to grow a ('MN':'SI' IND. (1−x)''GE' IND. x')-based diluted magnetic semiconductor [Internet]. 2020 ;[citado 2024 nov. 11 ] Available from: https://arxiv.org/pdf/cond-mat/0310770.pdf

    • Vancouver

      Silva AJR da, Antonelli A, Fazzio A. A possible route to grow a ('MN':'SI' IND. (1−x)''GE' IND. x')-based diluted magnetic semiconductor [Internet]. 2020 ;[citado 2024 nov. 11 ] Available from: https://arxiv.org/pdf/cond-mat/0310770.pdf

  • Relatorio tecnico

    Band structure model of magnetic coupling in semiconductors (2020)

    Dalpian, Gustavo M.; Wei, Su-Huai; Gong, X. G.; Fazzio, Adalberto ; Silva, Antonio Jose Roque da

    Unidade: IF

    Subjects: SEMICONDUTORES, FERROMAGNETISMO

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      DALPIAN, Gustavo M. et al. Band structure model of magnetic coupling in semiconductors. . São Paulo: Instituto de Física, Universidade de São Paulo. Disponível em: https://arxiv.org/pdf/cond-mat/0504084.pdf. Acesso em: 11 nov. 2024. , 2020

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      Dalpian, G. M., Wei, S. -H., Gong, X. G., Fazzio, A., & Silva, A. J. R. da. (2020). Band structure model of magnetic coupling in semiconductors. São Paulo: Instituto de Física, Universidade de São Paulo. Recuperado de https://arxiv.org/pdf/cond-mat/0504084.pdf

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      Dalpian GM, Wei S-H, Gong XG, Fazzio A, Silva AJR da. Band structure model of magnetic coupling in semiconductors [Internet]. 2020 ;[citado 2024 nov. 11 ] Available from: https://arxiv.org/pdf/cond-mat/0504084.pdf

    • Vancouver

      Dalpian GM, Wei S-H, Gong XG, Fazzio A, Silva AJR da. Band structure model of magnetic coupling in semiconductors [Internet]. 2020 ;[citado 2024 nov. 11 ] Available from: https://arxiv.org/pdf/cond-mat/0504084.pdf

  • Relatorio tecnico

    Comparative study of defect energetics in 'HF' IND. 2' and 'SI' IND. 2' (2020)

    Scopel, W. L.; Fazzio, Adalberto ; Silva, Antonio Jose Roque da

    Unidade: IF

    Subjects: SEMICONDUTORES, MATERIAIS NANOESTRUTURADOS

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      SCOPEL, W. L. e FAZZIO, Adalberto e SILVA, Antonio Jose Roque da. Comparative study of defect energetics in 'HF' IND. 2' and 'SI' IND. 2'. . São Paulo: Instituto de Física, Universidade de São Paulo. Disponível em: https://arxiv.org/pdf/cond-mat/0310747.pdf. Acesso em: 11 nov. 2024. , 2020

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      Scopel, W. L., Fazzio, A., & Silva, A. J. R. da. (2020). Comparative study of defect energetics in 'HF' IND. 2' and 'SI' IND. 2'. São Paulo: Instituto de Física, Universidade de São Paulo. Recuperado de https://arxiv.org/pdf/cond-mat/0310747.pdf

    • NLM

      Scopel WL, Fazzio A, Silva AJR da. Comparative study of defect energetics in 'HF' IND. 2' and 'SI' IND. 2' [Internet]. 2020 ;[citado 2024 nov. 11 ] Available from: https://arxiv.org/pdf/cond-mat/0310747.pdf

    • Vancouver

      Scopel WL, Fazzio A, Silva AJR da. Comparative study of defect energetics in 'HF' IND. 2' and 'SI' IND. 2' [Internet]. 2020 ;[citado 2024 nov. 11 ] Available from: https://arxiv.org/pdf/cond-mat/0310747.pdf

  • Relatorio tecnico

    Diffusion-reaction mechanisms of nitriding species in 'SI''O IND. 2' (2020)

    W. Orellana, W; Fazzio, Adalberto ; Silva, Antonio Jose Roque da

    Unidade: IF

    Subjects: SEMICONDUTORES, MATERIAIS NANOESTRUTURADOS

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      W. ORELLANA, W e FAZZIO, Adalberto e SILVA, Antonio Jose Roque da. Diffusion-reaction mechanisms of nitriding species in 'SI''O IND. 2'. . São Paulo: Instituto de Física, Universidade de São Paulo. Disponível em: https://arxiv.org/pdf/cond-mat/0311634.pdf. Acesso em: 11 nov. 2024. , 2020

    • APA

      W. Orellana, W., Fazzio, A., & Silva, A. J. R. da. (2020). Diffusion-reaction mechanisms of nitriding species in 'SI''O IND. 2'. São Paulo: Instituto de Física, Universidade de São Paulo. Recuperado de https://arxiv.org/pdf/cond-mat/0311634.pdf

    • NLM

      W. Orellana W, Fazzio A, Silva AJR da. Diffusion-reaction mechanisms of nitriding species in 'SI''O IND. 2' [Internet]. 2020 ;[citado 2024 nov. 11 ] Available from: https://arxiv.org/pdf/cond-mat/0311634.pdf

    • Vancouver

      W. Orellana W, Fazzio A, Silva AJR da. Diffusion-reaction mechanisms of nitriding species in 'SI''O IND. 2' [Internet]. 2020 ;[citado 2024 nov. 11 ] Available from: https://arxiv.org/pdf/cond-mat/0311634.pdf

  • Artigo de periodico

    Magnetic and power tuning of spin-asymmetric multiple excitons in a GaAs quantum well (2020)

    Naranjo, A.; Bragança, H.; Jacobsen, G. M.; Morais, R. R. O. de; Quivy, Alain André ; Marques, G. E.; Lopez-Richard, V.; Teodoro, M. D.

    Source: Physica E: Low-dimensional Systems and Nanostructures. Unidade: IF

    Subjects: FÍSICA MODERNA, NANOTECNOLOGIA, SEMICONDUTORES, POÇOS QUÂNTICOS, FOTOLUMINESCÊNCIA, SPIN, ASSIMETRIA

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      NARANJO, A. et al. Magnetic and power tuning of spin-asymmetric multiple excitons in a GaAs quantum well. Physica E: Low-dimensional Systems and Nanostructures, 2020Tradução . . Disponível em: https://doi.org/10.1016/j.physe.2020.114599. Acesso em: 11 nov. 2024.

    • APA

      Naranjo, A., Bragança, H., Jacobsen, G. M., Morais, R. R. O. de, Quivy, A. A., Marques, G. E., et al. (2020). Magnetic and power tuning of spin-asymmetric multiple excitons in a GaAs quantum well. Physica E: Low-dimensional Systems and Nanostructures. doi:10.1016/j.physe.2020.114599

    • NLM

      Naranjo A, Bragança H, Jacobsen GM, Morais RRO de, Quivy AA, Marques GE, Lopez-Richard V, Teodoro MD. Magnetic and power tuning of spin-asymmetric multiple excitons in a GaAs quantum well [Internet]. Physica E: Low-dimensional Systems and Nanostructures. 2020 ;[citado 2024 nov. 11 ] Available from: https://doi.org/10.1016/j.physe.2020.114599

    • Vancouver

      Naranjo A, Bragança H, Jacobsen GM, Morais RRO de, Quivy AA, Marques GE, Lopez-Richard V, Teodoro MD. Magnetic and power tuning of spin-asymmetric multiple excitons in a GaAs quantum well [Internet]. Physica E: Low-dimensional Systems and Nanostructures. 2020 ;[citado 2024 nov. 11 ] Available from: https://doi.org/10.1016/j.physe.2020.114599

  • Artigo de periodico

    Effects of microstructure on the magnetic properties of polycrystalline NiMn2O4 spinel oxides (2019)

    Cabral, A J Freitas; Remedios, C M R; Gratens, Xavier Pierre Marie; Chitta, Valmir Antonio

    Source: Journal of Magnetism and Magnetic Materials. Unidade: IF

    Subjects: SEMICONDUTORES, ESTRUTURA DOS MATERIAIS, PROPRIEDADES DOS MATERIAIS

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      CABRAL, A J Freitas et al. Effects of microstructure on the magnetic properties of polycrystalline NiMn2O4 spinel oxides. Journal of Magnetism and Magnetic Materials, v. 469, p. 108-112, 2019Tradução . . Disponível em: https://doi.org/10.1016/j.jmmm.2018.08.051. Acesso em: 11 nov. 2024.

    • APA

      Cabral, A. J. F., Remedios, C. M. R., Gratens, X. P. M., & Chitta, V. A. (2019). Effects of microstructure on the magnetic properties of polycrystalline NiMn2O4 spinel oxides. Journal of Magnetism and Magnetic Materials, 469, 108-112. doi:10.1016/j.jmmm.2018.08.051

    • NLM

      Cabral AJF, Remedios CMR, Gratens XPM, Chitta VA. Effects of microstructure on the magnetic properties of polycrystalline NiMn2O4 spinel oxides [Internet]. Journal of Magnetism and Magnetic Materials. 2019 ; 469 108-112.[citado 2024 nov. 11 ] Available from: https://doi.org/10.1016/j.jmmm.2018.08.051

    • Vancouver

      Cabral AJF, Remedios CMR, Gratens XPM, Chitta VA. Effects of microstructure on the magnetic properties of polycrystalline NiMn2O4 spinel oxides [Internet]. Journal of Magnetism and Magnetic Materials. 2019 ; 469 108-112.[citado 2024 nov. 11 ] Available from: https://doi.org/10.1016/j.jmmm.2018.08.051

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