Source: Materials Research Society Symposium Proceedings. Conference titles: MRS Fall Meeting. Unidade: IFSC
Assunto: FÍSICA
ABNT
HIPÓLITO, Oscar e LEÃO, Salviano A. e SILVA, A. Ferreira da. Occurrence of ground and excited-state impurity bands in silicon inversion layers: electric field effects. 1994, Anais.. Pittsburgh: Materials Research Society - MRS, 1994. Disponível em: https://doi.org/10.1557/PROC-325-183. Acesso em: 19 ago. 2024.APA
Hipólito, O., Leão, S. A., & Silva, A. F. da. (1994). Occurrence of ground and excited-state impurity bands in silicon inversion layers: electric field effects. In Materials Research Society Symposium Proceedings (Vol. 325). Pittsburgh: Materials Research Society - MRS. doi:10.1557/PROC-325-183NLM
Hipólito O, Leão SA, Silva AF da. Occurrence of ground and excited-state impurity bands in silicon inversion layers: electric field effects [Internet]. Materials Research Society Symposium Proceedings. 1994 ; 325[citado 2024 ago. 19 ] Available from: https://doi.org/10.1557/PROC-325-183Vancouver
Hipólito O, Leão SA, Silva AF da. Occurrence of ground and excited-state impurity bands in silicon inversion layers: electric field effects [Internet]. Materials Research Society Symposium Proceedings. 1994 ; 325[citado 2024 ago. 19 ] Available from: https://doi.org/10.1557/PROC-325-183