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Trabalho de evento-anais periodico
Influence of quantum-dots density on average in-plane strain of optoelectronic devices investigated by high-resolution X-ray diffraction (2009)
Freitas, Raul de Oliveira; Diaz, Beatriz; Abramof, Eduardo; Quivy, A. A.; Morelhão, Sérgio Luiz
Source: Physica Status Solidi A - Applications and Materials Science. Conference titles: Biennial Conference on High Resolution X-Ray Diffraction and Imaging. Unidade: IF
Subjects: POÇOS QUÂNTICOS, DIFRAÇÃO POR RAIOS X
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ABNT
FREITAS, Raul de Oliveira et al. Influence of quantum-dots density on average in-plane strain of optoelectronic devices investigated by high-resolution X-ray diffraction. Physica Status Solidi A - Applications and Materials Science. Weinheim: Wiley-VCH Verlag. Disponível em: http://www3.interscience.wiley.com/cgi-bin/fulltext/122462600/PDFSTART. Acesso em: 06 jul. 2024. , 2009
APA
Freitas, R. de O., Diaz, B., Abramof, E., Quivy, A. A., & Morelhão, S. L. (2009). Influence of quantum-dots density on average in-plane strain of optoelectronic devices investigated by high-resolution X-ray diffraction. Physica Status Solidi A - Applications and Materials Science. Weinheim: Wiley-VCH Verlag. Recuperado de http://www3.interscience.wiley.com/cgi-bin/fulltext/122462600/PDFSTART
NLM
Freitas R de O, Diaz B, Abramof E, Quivy AA, Morelhão SL. Influence of quantum-dots density on average in-plane strain of optoelectronic devices investigated by high-resolution X-ray diffraction [Internet]. Physica Status Solidi A - Applications and Materials Science. 2009 ; 206( 8):[citado 2024 jul. 06 ] Available from: http://www3.interscience.wiley.com/cgi-bin/fulltext/122462600/PDFSTART
Vancouver
Freitas R de O, Diaz B, Abramof E, Quivy AA, Morelhão SL. Influence of quantum-dots density on average in-plane strain of optoelectronic devices investigated by high-resolution X-ray diffraction [Internet]. Physica Status Solidi A - Applications and Materials Science. 2009 ; 206( 8):[citado 2024 jul. 06 ] Available from: http://www3.interscience.wiley.com/cgi-bin/fulltext/122462600/PDFSTART
Trabalho de evento-anais periodico
Magnetic resonant x-ray diffraction applied to the study of EuTe films and multilayers (2009)
Diaz, B; Abramof, E; Rappl, P H O; Granado, E; Chitta, Valmir Antonio; Henriques, André Bohomoletz; Oliveira Jr., N. F.
Source: International Journal of Modern Physics B. Conference titles: International Conference on High Magnetic Fields in Semiconductor Physics and Nanotechnology. Unidade: IF
Subjects: SEMICONDUTORES, DIFRAÇÃO POR RAIOS X
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ABNT
DIAZ, B et al. Magnetic resonant x-ray diffraction applied to the study of EuTe films and multilayers. International Journal of Modern Physics B. Singapore: World Scientific. . Acesso em: 06 jul. 2024. , 2009
APA
Diaz, B., Abramof, E., Rappl, P. H. O., Granado, E., Chitta, V. A., Henriques, A. B., & Oliveira Jr., N. F. (2009). Magnetic resonant x-ray diffraction applied to the study of EuTe films and multilayers. International Journal of Modern Physics B. Singapore: World Scientific.
NLM
Diaz B, Abramof E, Rappl PHO, Granado E, Chitta VA, Henriques AB, Oliveira Jr. NF. Magnetic resonant x-ray diffraction applied to the study of EuTe films and multilayers. International Journal of Modern Physics B. 2009 ; 23( 12-13): 2979-2983.[citado 2024 jul. 06 ]
Vancouver
Diaz B, Abramof E, Rappl PHO, Granado E, Chitta VA, Henriques AB, Oliveira Jr. NF. Magnetic resonant x-ray diffraction applied to the study of EuTe films and multilayers. International Journal of Modern Physics B. 2009 ; 23( 12-13): 2979-2983.[citado 2024 jul. 06 ]
Artigo de periodico
Magnetic ordering of EuTe/PbTe multilayers determined by x-ray resonant diffraction (2009)
Diaz, B; Granado, E; Abramof, E; Rappl, P H O; Chitta, Valmir Antonio; Henriques, André Bohomoletz
Source: Applied Physics Letters. Unidade: IF
Subjects: ESPALHAMENTO, DIFRAÇÃO POR RAIOS X
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ABNT
DIAZ, B et al. Magnetic ordering of EuTe/PbTe multilayers determined by x-ray resonant diffraction. Applied Physics Letters, v. 92, n. 24, p. 242511/1-242511/3, 2009Tradução . . Disponível em: https://doi.org/10.1063/1.2945802. Acesso em: 06 jul. 2024.
APA
Diaz, B., Granado, E., Abramof, E., Rappl, P. H. O., Chitta, V. A., & Henriques, A. B. (2009). Magnetic ordering of EuTe/PbTe multilayers determined by x-ray resonant diffraction. Applied Physics Letters, 92( 24), 242511/1-242511/3. doi:10.1063/1.2945802
NLM
Diaz B, Granado E, Abramof E, Rappl PHO, Chitta VA, Henriques AB. Magnetic ordering of EuTe/PbTe multilayers determined by x-ray resonant diffraction [Internet]. Applied Physics Letters. 2009 ; 92( 24): 242511/1-242511/3.[citado 2024 jul. 06 ] Available from: https://doi.org/10.1063/1.2945802
Vancouver
Diaz B, Granado E, Abramof E, Rappl PHO, Chitta VA, Henriques AB. Magnetic ordering of EuTe/PbTe multilayers determined by x-ray resonant diffraction [Internet]. Applied Physics Letters. 2009 ; 92( 24): 242511/1-242511/3.[citado 2024 jul. 06 ] Available from: https://doi.org/10.1063/1.2945802
Artigo de periodico
Room temperature ferromagnetism in cubic GaN epilayers implanted with "Mn POT.+" ions (2004)
Chitta, Valmir Antonio; Coaquira, J A H; Fernandez, J R L; Duarte, C A; Leite, J. R.; Schikora, D; As, D J; Lischka, K; Abramof, E
Source: Applied Physics Letters. Unidade: IF
Subjects: SEMICONDUTORES, FILMES FINOS, DIFRAÇÃO POR RAIOS X, ESPECTROSCOPIA RAMAN
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
CHITTA, Valmir Antonio et al. Room temperature ferromagnetism in cubic GaN epilayers implanted with "Mn POT.+" ions. Applied Physics Letters, v. 85, n. 17, p. 3777-3779, 2004Tradução . . Disponível em: https://doi.org/10.1063/1.1812590. Acesso em: 06 jul. 2024.
APA
Chitta, V. A., Coaquira, J. A. H., Fernandez, J. R. L., Duarte, C. A., Leite, J. R., Schikora, D., et al. (2004). Room temperature ferromagnetism in cubic GaN epilayers implanted with "Mn POT.+" ions. Applied Physics Letters, 85( 17), 3777-3779. doi:10.1063/1.1812590
NLM
Chitta VA, Coaquira JAH, Fernandez JRL, Duarte CA, Leite JR, Schikora D, As DJ, Lischka K, Abramof E. Room temperature ferromagnetism in cubic GaN epilayers implanted with "Mn POT.+" ions [Internet]. Applied Physics Letters. 2004 ; 85( 17): 3777-3779.[citado 2024 jul. 06 ] Available from: https://doi.org/10.1063/1.1812590
Vancouver
Chitta VA, Coaquira JAH, Fernandez JRL, Duarte CA, Leite JR, Schikora D, As DJ, Lischka K, Abramof E. Room temperature ferromagnetism in cubic GaN epilayers implanted with "Mn POT.+" ions [Internet]. Applied Physics Letters. 2004 ; 85( 17): 3777-3779.[citado 2024 jul. 06 ] Available from: https://doi.org/10.1063/1.1812590

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