Cardoso, Lilian Soares; Stefanelo, Josiani Cristina; Faria, Roberto Mendonça 
Source: Synthetic Metals. Unidade: IFSC
Subjects: TRANSISTORES, SOLVENTE, DIELÉTRICOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
CARDOSO, Lilian Soares e STEFANELO, Josiani Cristina e FARIA, Roberto Mendonça. Induced characteristics of n- and p-channel OFETs by the choice of solvent for the dielectric layer towards the fabrication of an organic complementary circuit. Synthetic Metals, v. 220, p. 286-291, 2016Tradução . . Disponível em: https://doi.org/10.1016/j.synthmet.2016.06.023. Acesso em: 15 out. 2024.APA
Cardoso, L. S., Stefanelo, J. C., & Faria, R. M. (2016). Induced characteristics of n- and p-channel OFETs by the choice of solvent for the dielectric layer towards the fabrication of an organic complementary circuit. Synthetic Metals, 220, 286-291. doi:10.1016/j.synthmet.2016.06.023NLM
Cardoso LS, Stefanelo JC, Faria RM. Induced characteristics of n- and p-channel OFETs by the choice of solvent for the dielectric layer towards the fabrication of an organic complementary circuit [Internet]. Synthetic Metals. 2016 ; 220 286-291.[citado 2024 out. 15 ] Available from: https://doi.org/10.1016/j.synthmet.2016.06.023Vancouver
Cardoso LS, Stefanelo JC, Faria RM. Induced characteristics of n- and p-channel OFETs by the choice of solvent for the dielectric layer towards the fabrication of an organic complementary circuit [Internet]. Synthetic Metals. 2016 ; 220 286-291.[citado 2024 out. 15 ] Available from: https://doi.org/10.1016/j.synthmet.2016.06.023
