Spin relaxation of holes in In0.53Ga0.47As/InP quantum wells (2021)
Source: Physica E: low-dimensional systems and nanostructures. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, POÇOS QUÂNTICOS
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PATRICIO, Marco Antonio Tito et al. Spin relaxation of holes in In0.53Ga0.47As/InP quantum wells. Physica E: low-dimensional systems and nanostructures, v. 131, p. 114700-1-114700-6, 2021Tradução . . Disponível em: https://doi.org/10.1016/j.physe.2021.114700. Acesso em: 19 ago. 2024.APA
Patricio, M. A. T., Tavares, B. G. M., Jacobsen, J. M., Teodoro, M. D., LaPierre, R. R., & Pusep, Y. A. (2021). Spin relaxation of holes in In0.53Ga0.47As/InP quantum wells. Physica E: low-dimensional systems and nanostructures, 131, 114700-1-114700-6. doi:10.1016/j.physe.2021.114700NLM
Patricio MAT, Tavares BGM, Jacobsen JM, Teodoro MD, LaPierre RR, Pusep YA. Spin relaxation of holes in In0.53Ga0.47As/InP quantum wells [Internet]. Physica E: low-dimensional systems and nanostructures. 2021 ; 131 114700-1-114700-6.[citado 2024 ago. 19 ] Available from: https://doi.org/10.1016/j.physe.2021.114700Vancouver
Patricio MAT, Tavares BGM, Jacobsen JM, Teodoro MD, LaPierre RR, Pusep YA. Spin relaxation of holes in In0.53Ga0.47As/InP quantum wells [Internet]. Physica E: low-dimensional systems and nanostructures. 2021 ; 131 114700-1-114700-6.[citado 2024 ago. 19 ] Available from: https://doi.org/10.1016/j.physe.2021.114700