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Artigo de periodico
Estimating the thermal insulating performance of multi-component refractory ceramic systems based on a machine learning surrogate model framework (2020)
Santos, Denise P ; Pelissari, Pedro Ivo Batistel Galiote Brossi ; Mello, Rodrigo Fernandes de ; Pandolfelli, Victor Carlos
Source: Journal of Applied Physics. Unidade: ICMC
Subjects: APRENDIZADO COMPUTACIONAL, MÉTODO DOS ELEMENTOS FINITOS, FORNO ELÉTRICO, TRANSFERÊNCIA DE CALOR
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ABNT
SANTOS, Denise P et al. Estimating the thermal insulating performance of multi-component refractory ceramic systems based on a machine learning surrogate model framework. Journal of Applied Physics, v. 127, n. 21, p. 215104-1-215104-7, 2020Tradução . . Disponível em: https://doi.org/10.1063/5.0004395. Acesso em: 01 out. 2024.
APA
Santos, D. P., Pelissari, P. I. B. G. B., Mello, R. F. de, & Pandolfelli, V. C. (2020). Estimating the thermal insulating performance of multi-component refractory ceramic systems based on a machine learning surrogate model framework. Journal of Applied Physics, 127( 21), 215104-1-215104-7. doi:10.1063/5.0004395
NLM
Santos DP, Pelissari PIBGB, Mello RF de, Pandolfelli VC. Estimating the thermal insulating performance of multi-component refractory ceramic systems based on a machine learning surrogate model framework [Internet]. Journal of Applied Physics. 2020 ; 127( 21): 215104-1-215104-7.[citado 2024 out. 01 ] Available from: https://doi.org/10.1063/5.0004395
Vancouver
Santos DP, Pelissari PIBGB, Mello RF de, Pandolfelli VC. Estimating the thermal insulating performance of multi-component refractory ceramic systems based on a machine learning surrogate model framework [Internet]. Journal of Applied Physics. 2020 ; 127( 21): 215104-1-215104-7.[citado 2024 out. 01 ] Available from: https://doi.org/10.1063/5.0004395
Artigo de periodico
Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells (2016)
Tito, M. A.; Pusep, Yuri A.; Gold, A.; Teodoro, M. D.; Marques, G. E.; LaPierre, R. R.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, POÇOS QUÂNTICOS, SEMICONDUTORES
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TITO, M. A. et al. Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells. Journal of Applied Physics, v. 119, n. 9, p. 094301-1-094301-8, 2016Tradução . . Disponível em: https://doi.org/10.1063/1.4942854. Acesso em: 01 out. 2024.
APA
Tito, M. A., Pusep, Y. A., Gold, A., Teodoro, M. D., Marques, G. E., & LaPierre, R. R. (2016). Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells. Journal of Applied Physics, 119( 9), 094301-1-094301-8. doi:10.1063/1.4942854
NLM
Tito MA, Pusep YA, Gold A, Teodoro MD, Marques GE, LaPierre RR. Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells [Internet]. Journal of Applied Physics. 2016 ; 119( 9): 094301-1-094301-8.[citado 2024 out. 01 ] Available from: https://doi.org/10.1063/1.4942854
Vancouver
Tito MA, Pusep YA, Gold A, Teodoro MD, Marques GE, LaPierre RR. Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells [Internet]. Journal of Applied Physics. 2016 ; 119( 9): 094301-1-094301-8.[citado 2024 out. 01 ] Available from: https://doi.org/10.1063/1.4942854
Artigo de periodico
Carrier transfer in vertically stacked quantum ring-quantum dot chains (2015)
Mazur, Yu. I.; Lopes-Oliveira, V.; Souza, L. D.; Lopez-Richard, V.; Teodoro, M. D.; Dorogan, V. G.; Benamara, M.; Wu, J.; Tarasov, G. G.; Marega Júnior, Euclydes; Wang, Z. M.; Marques, G. E.; Salamo, G. J.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, POÇOS QUÂNTICOS
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MAZUR, Yu. I. et al. Carrier transfer in vertically stacked quantum ring-quantum dot chains. Journal of Applied Physics, v. 117, n. 15, p. 154307-1-154307-9, 2015Tradução . . Disponível em: https://doi.org/10.1063/1.4918544. Acesso em: 01 out. 2024.
APA
Mazur, Y. I., Lopes-Oliveira, V., Souza, L. D., Lopez-Richard, V., Teodoro, M. D., Dorogan, V. G., et al. (2015). Carrier transfer in vertically stacked quantum ring-quantum dot chains. Journal of Applied Physics, 117( 15), 154307-1-154307-9. doi:10.1063/1.4918544
NLM
Mazur YI, Lopes-Oliveira V, Souza LD, Lopez-Richard V, Teodoro MD, Dorogan VG, Benamara M, Wu J, Tarasov GG, Marega Júnior E, Wang ZM, Marques GE, Salamo GJ. Carrier transfer in vertically stacked quantum ring-quantum dot chains [Internet]. Journal of Applied Physics. 2015 ; 117( 15): 154307-1-154307-9.[citado 2024 out. 01 ] Available from: https://doi.org/10.1063/1.4918544
Vancouver
Mazur YI, Lopes-Oliveira V, Souza LD, Lopez-Richard V, Teodoro MD, Dorogan VG, Benamara M, Wu J, Tarasov GG, Marega Júnior E, Wang ZM, Marques GE, Salamo GJ. Carrier transfer in vertically stacked quantum ring-quantum dot chains [Internet]. Journal of Applied Physics. 2015 ; 117( 15): 154307-1-154307-9.[citado 2024 out. 01 ] Available from: https://doi.org/10.1063/1.4918544
Artigo de periodico
Crystal structure and optical characterization of heterostructured GaAs/AlGaAs/GaAs nanowires (2013)
Pusep, Yuri A.; Arakaki, Haroldo; Souza, Carlos Alberto de; Rodrigues, A. D.; Haapamaki, C. M.; LaPierre, R. R.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, MATERIAIS NANOESTRUTURADOS
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PUSEP, Yuri A. et al. Crystal structure and optical characterization of heterostructured GaAs/AlGaAs/GaAs nanowires. Journal of Applied Physics, v. 113, n. 16, p. 164311-1-164311-4, 2013Tradução . . Disponível em: https://doi.org/10.1063/1.4803494. Acesso em: 01 out. 2024.
APA
Pusep, Y. A., Arakaki, H., Souza, C. A. de, Rodrigues, A. D., Haapamaki, C. M., & LaPierre, R. R. (2013). Crystal structure and optical characterization of heterostructured GaAs/AlGaAs/GaAs nanowires. Journal of Applied Physics, 113( 16), 164311-1-164311-4. doi:10.1063/1.4803494
NLM
Pusep YA, Arakaki H, Souza CA de, Rodrigues AD, Haapamaki CM, LaPierre RR. Crystal structure and optical characterization of heterostructured GaAs/AlGaAs/GaAs nanowires [Internet]. Journal of Applied Physics. 2013 ; 113( 16): 164311-1-164311-4.[citado 2024 out. 01 ] Available from: https://doi.org/10.1063/1.4803494
Vancouver
Pusep YA, Arakaki H, Souza CA de, Rodrigues AD, Haapamaki CM, LaPierre RR. Crystal structure and optical characterization of heterostructured GaAs/AlGaAs/GaAs nanowires [Internet]. Journal of Applied Physics. 2013 ; 113( 16): 164311-1-164311-4.[citado 2024 out. 01 ] Available from: https://doi.org/10.1063/1.4803494
Artigo de periodico
In-plane mapping of buried 'In''Ga''As' quantum rings and hybridization effects on the electronic structure (2012)
Teodoro, M. D.; Malachias, A.; Oliveira, V. Lopes; Cesar, D. F.; Richard, V. Lopez; Marques, G. E.; Marega Júnior, Euclydes; Benamara, M.; Mazur, Yu. I.; Salamo, G. J.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: MATERIAIS NANOESTRUTURADOS, ELÉTRONS, DIFRAÇÃO POR RAIOS X, ESTRUTURA ELETRÔNICA
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TEODORO, M. D. et al. In-plane mapping of buried 'In''Ga''As' quantum rings and hybridization effects on the electronic structure. Journal of Applied Physics, v. 112, n. 1, p. 014319-1-014319-9, 2012Tradução . . Disponível em: https://doi.org/10.1063/1.4733964. Acesso em: 01 out. 2024.
APA
Teodoro, M. D., Malachias, A., Oliveira, V. L., Cesar, D. F., Richard, V. L., Marques, G. E., et al. (2012). In-plane mapping of buried 'In''Ga''As' quantum rings and hybridization effects on the electronic structure. Journal of Applied Physics, 112( 1), 014319-1-014319-9. doi:10.1063/1.4733964
NLM
Teodoro MD, Malachias A, Oliveira VL, Cesar DF, Richard VL, Marques GE, Marega Júnior E, Benamara M, Mazur YI, Salamo GJ. In-plane mapping of buried 'In''Ga''As' quantum rings and hybridization effects on the electronic structure [Internet]. Journal of Applied Physics. 2012 ; 112( 1): 014319-1-014319-9.[citado 2024 out. 01 ] Available from: https://doi.org/10.1063/1.4733964
Vancouver
Teodoro MD, Malachias A, Oliveira VL, Cesar DF, Richard VL, Marques GE, Marega Júnior E, Benamara M, Mazur YI, Salamo GJ. In-plane mapping of buried 'In''Ga''As' quantum rings and hybridization effects on the electronic structure [Internet]. Journal of Applied Physics. 2012 ; 112( 1): 014319-1-014319-9.[citado 2024 out. 01 ] Available from: https://doi.org/10.1063/1.4733964
Artigo de periodico
Electron and hole scattering in short-period 'IN'GA'AS'/'IN'P superlattices (2011)
Pusep, Yuri A.; Gold, A.; Mamani, N. C.; Godoy, M. P. F.; Gobato, Y. Galvão; LaPierre, R. R.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: SEMICONDUTORES, POÇOS QUÂNTICOS, FOTOLUMINESCÊNCIA
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PUSEP, Yuri A. et al. Electron and hole scattering in short-period 'IN'GA'AS'/'IN'P superlattices. Journal of Applied Physics, v. 110, n. 7, p. 073706-1-073706-6, 2011Tradução . . Disponível em: https://doi.org/10.1063/1.3646365. Acesso em: 01 out. 2024.
APA
Pusep, Y. A., Gold, A., Mamani, N. C., Godoy, M. P. F., Gobato, Y. G., & LaPierre, R. R. (2011). Electron and hole scattering in short-period 'IN'GA'AS'/'IN'P superlattices. Journal of Applied Physics, 110( 7), 073706-1-073706-6. doi:10.1063/1.3646365
NLM
Pusep YA, Gold A, Mamani NC, Godoy MPF, Gobato YG, LaPierre RR. Electron and hole scattering in short-period 'IN'GA'AS'/'IN'P superlattices [Internet]. Journal of Applied Physics. 2011 ; 110( 7): 073706-1-073706-6.[citado 2024 out. 01 ] Available from: https://doi.org/10.1063/1.3646365
Vancouver
Pusep YA, Gold A, Mamani NC, Godoy MPF, Gobato YG, LaPierre RR. Electron and hole scattering in short-period 'IN'GA'AS'/'IN'P superlattices [Internet]. Journal of Applied Physics. 2011 ; 110( 7): 073706-1-073706-6.[citado 2024 out. 01 ] Available from: https://doi.org/10.1063/1.3646365
Artigo de periodico
Prediction of good glass formers in the 'AL'-'NI'-'LA' and 'AL'-'NI'-'GD' systems using topological instability and electronegativity (2011)
Gargarella, Piter; Oliveira, Marcelo Falcão de ; Kiminami, Claudio Shyinti; Pauly, S.; Kühn, U.; Bolfarini, Claudemiro; Botta Filho, Walter José; Eckert, J.
Source: Journal of Applied Physics. Unidade: EESC
Subjects: VIDROS METÁLICOS, TOPOLOGIA
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GARGARELLA, Piter et al. Prediction of good glass formers in the 'AL'-'NI'-'LA' and 'AL'-'NI'-'GD' systems using topological instability and electronegativity. Journal of Applied Physics, v. 109, p. 093509(1-7), 2011Tradução . . Disponível em: https://doi.org/10.1063/1.3563099. Acesso em: 01 out. 2024.
APA
Gargarella, P., Oliveira, M. F. de, Kiminami, C. S., Pauly, S., Kühn, U., Bolfarini, C., et al. (2011). Prediction of good glass formers in the 'AL'-'NI'-'LA' and 'AL'-'NI'-'GD' systems using topological instability and electronegativity. Journal of Applied Physics, 109, 093509(1-7). doi:10.1063/1.3563099
NLM
Gargarella P, Oliveira MF de, Kiminami CS, Pauly S, Kühn U, Bolfarini C, Botta Filho WJ, Eckert J. Prediction of good glass formers in the 'AL'-'NI'-'LA' and 'AL'-'NI'-'GD' systems using topological instability and electronegativity [Internet]. Journal of Applied Physics. 2011 ; 109 093509(1-7).[citado 2024 out. 01 ] Available from: https://doi.org/10.1063/1.3563099
Vancouver
Gargarella P, Oliveira MF de, Kiminami CS, Pauly S, Kühn U, Bolfarini C, Botta Filho WJ, Eckert J. Prediction of good glass formers in the 'AL'-'NI'-'LA' and 'AL'-'NI'-'GD' systems using topological instability and electronegativity [Internet]. Journal of Applied Physics. 2011 ; 109 093509(1-7).[citado 2024 out. 01 ] Available from: https://doi.org/10.1063/1.3563099
Artigo de periodico
Universal resistance capacitance crossover in current-voltage characteristics for unshunted array of overdamped Nb-Al'O IND.x'-Nb Josephson junctions (2010)
Sergeenkov, S.; Rivera, V. A. G.; Marega Júnior, Euclydes; Moreira, F. M. Araújo
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: SUPERCONDUTIVIDADE, ELETROMAGNETISMO, ELETRODINÂMICA, ELETRICIDADE E ELETRÔNICA
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SERGEENKOV, S. et al. Universal resistance capacitance crossover in current-voltage characteristics for unshunted array of overdamped Nb-Al'O IND.x'-Nb Josephson junctions. Journal of Applied Physics, v. 107, n. 9, p. 096102-1-096102-3, 2010Tradução . . Disponível em: https://doi.org/10.1063/1.3407566. Acesso em: 01 out. 2024.
APA
Sergeenkov, S., Rivera, V. A. G., Marega Júnior, E., & Moreira, F. M. A. (2010). Universal resistance capacitance crossover in current-voltage characteristics for unshunted array of overdamped Nb-Al'O IND.x'-Nb Josephson junctions. Journal of Applied Physics, 107( 9), 096102-1-096102-3. doi:10.1063/1.3407566
NLM
Sergeenkov S, Rivera VAG, Marega Júnior E, Moreira FMA. Universal resistance capacitance crossover in current-voltage characteristics for unshunted array of overdamped Nb-Al'O IND.x'-Nb Josephson junctions [Internet]. Journal of Applied Physics. 2010 ; 107( 9): 096102-1-096102-3.[citado 2024 out. 01 ] Available from: https://doi.org/10.1063/1.3407566
Vancouver
Sergeenkov S, Rivera VAG, Marega Júnior E, Moreira FMA. Universal resistance capacitance crossover in current-voltage characteristics for unshunted array of overdamped Nb-Al'O IND.x'-Nb Josephson junctions [Internet]. Journal of Applied Physics. 2010 ; 107( 9): 096102-1-096102-3.[citado 2024 out. 01 ] Available from: https://doi.org/10.1063/1.3407566
Artigo de periodico
Structural and optical analysis of GaAsP/GaP core-shell nanowires (2009)
Mohseni, P. K.; Rodrigues, A. D.; Galzerani, J. C.; Pusep, Yuri A.; LaPierre, R. R.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: SEMICONDUTORES, FOTOLUMINESCÊNCIA, MATERIAIS NANOESTRUTURADOS, ESPECTROSCOPIA RAMAN
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MOHSENI, P. K. et al. Structural and optical analysis of GaAsP/GaP core-shell nanowires. Journal of Applied Physics, v. 106, n. 12, p. 124306-1-124306-7, 2009Tradução . . Disponível em: https://doi.org/10.1063/1.3269724. Acesso em: 01 out. 2024.
APA
Mohseni, P. K., Rodrigues, A. D., Galzerani, J. C., Pusep, Y. A., & LaPierre, R. R. (2009). Structural and optical analysis of GaAsP/GaP core-shell nanowires. Journal of Applied Physics, 106( 12), 124306-1-124306-7. doi:10.1063/1.3269724
NLM
Mohseni PK, Rodrigues AD, Galzerani JC, Pusep YA, LaPierre RR. Structural and optical analysis of GaAsP/GaP core-shell nanowires [Internet]. Journal of Applied Physics. 2009 ; 106( 12): 124306-1-124306-7.[citado 2024 out. 01 ] Available from: https://doi.org/10.1063/1.3269724
Vancouver
Mohseni PK, Rodrigues AD, Galzerani JC, Pusep YA, LaPierre RR. Structural and optical analysis of GaAsP/GaP core-shell nanowires [Internet]. Journal of Applied Physics. 2009 ; 106( 12): 124306-1-124306-7.[citado 2024 out. 01 ] Available from: https://doi.org/10.1063/1.3269724
Artigo de periodico
Study of phase transition in (Pb,Ba)Ti'OIND.3' thin films (2008)
Pontes, F. M.; Santos, L. S.; Pontes, D. S. L.; Longo, E.; Claro Neto, Salvador; Leite, E. R.; Chiquito, A. J.; Pizani, P. S.
Source: Journal of Applied Physics. Unidade: IQSC
Assunto: QUÍMICA ANALÍTICA
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PONTES, F. M. et al. Study of phase transition in (Pb,Ba)Ti'OIND.3' thin films. Journal of Applied Physics, v. 104, n. 1, p. 014107-1, 2008Tradução . . Acesso em: 01 out. 2024.
APA
Pontes, F. M., Santos, L. S., Pontes, D. S. L., Longo, E., Claro Neto, S., Leite, E. R., et al. (2008). Study of phase transition in (Pb,Ba)Ti'OIND.3' thin films. Journal of Applied Physics, 104( 1), 014107-1.
NLM
Pontes FM, Santos LS, Pontes DSL, Longo E, Claro Neto S, Leite ER, Chiquito AJ, Pizani PS. Study of phase transition in (Pb,Ba)Ti'OIND.3' thin films. Journal of Applied Physics. 2008 ; 104( 1): 014107-1.[citado 2024 out. 01 ]
Vancouver
Pontes FM, Santos LS, Pontes DSL, Longo E, Claro Neto S, Leite ER, Chiquito AJ, Pizani PS. Study of phase transition in (Pb,Ba)Ti'OIND.3' thin films. Journal of Applied Physics. 2008 ; 104( 1): 014107-1.[citado 2024 out. 01 ]
Artigo de periodico
Structural, microstructural, and transport properties of highly oriented `LaNiO IND.3´ thin films deposited on `SrTiO IND.3´ single crystal (2007)
Mambrini, G P; Escote, M T; Chiquito, A J; Longo, E; Varela, J A; Jardim, R. F.
Source: Journal of Applied Physics. Unidade: IF
Subjects: FILMES FINOS, DIFRAÇÃO POR RAIOS X
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MAMBRINI, G P et al. Structural, microstructural, and transport properties of highly oriented `LaNiO IND.3´ thin films deposited on `SrTiO IND.3´ single crystal. Journal of Applied Physics, v. 102, n. 4, p. 043708/1-043708/6, 2007Tradução . . Disponível em: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000102000004043708000001&idtype=cvips. Acesso em: 01 out. 2024.
APA
Mambrini, G. P., Escote, M. T., Chiquito, A. J., Longo, E., Varela, J. A., & Jardim, R. F. (2007). Structural, microstructural, and transport properties of highly oriented `LaNiO IND.3´ thin films deposited on `SrTiO IND.3´ single crystal. Journal of Applied Physics, 102( 4), 043708/1-043708/6. Recuperado de http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000102000004043708000001&idtype=cvips
NLM
Mambrini GP, Escote MT, Chiquito AJ, Longo E, Varela JA, Jardim RF. Structural, microstructural, and transport properties of highly oriented `LaNiO IND.3´ thin films deposited on `SrTiO IND.3´ single crystal [Internet]. Journal of Applied Physics. 2007 ; 102( 4): 043708/1-043708/6.[citado 2024 out. 01 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000102000004043708000001&idtype=cvips
Vancouver
Mambrini GP, Escote MT, Chiquito AJ, Longo E, Varela JA, Jardim RF. Structural, microstructural, and transport properties of highly oriented `LaNiO IND.3´ thin films deposited on `SrTiO IND.3´ single crystal [Internet]. Journal of Applied Physics. 2007 ; 102( 4): 043708/1-043708/6.[citado 2024 out. 01 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000102000004043708000001&idtype=cvips
Artigo de periodico
Effect of 'Nd POT.3 +' concentration quenching in highly doped lead lanthanum zirconate titanate transparent ferroelectric ceramics (2007)
de Camargo, Andrea Simone Stucchi ; Jacinto, Carlos; Nunes, Luiz Antônio de Oliveira; Catunda, Tomaz ; Garcia, D.; Botero, Ériton Rodrigo; Eiras, José Antonio
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: CERÂMICA, FERROELETRICIDADE, LASER
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DE CAMARGO, Andrea Simone Stucchi et al. Effect of 'Nd POT.3 +' concentration quenching in highly doped lead lanthanum zirconate titanate transparent ferroelectric ceramics. Journal of Applied Physics, v. 101, n. 5, p. 053111-1-053111-4, 2007Tradução . . Disponível em: https://doi.org/10.1063/1.2435074. Acesso em: 01 out. 2024.
APA
de Camargo, A. S. S., Jacinto, C., Nunes, L. A. de O., Catunda, T., Garcia, D., Botero, É. R., & Eiras, J. A. (2007). Effect of 'Nd POT.3 +' concentration quenching in highly doped lead lanthanum zirconate titanate transparent ferroelectric ceramics. Journal of Applied Physics, 101( 5), 053111-1-053111-4. doi:10.1063/1.2435074
NLM
de Camargo ASS, Jacinto C, Nunes LA de O, Catunda T, Garcia D, Botero ÉR, Eiras JA. Effect of 'Nd POT.3 +' concentration quenching in highly doped lead lanthanum zirconate titanate transparent ferroelectric ceramics [Internet]. Journal of Applied Physics. 2007 ; 101( 5): 053111-1-053111-4.[citado 2024 out. 01 ] Available from: https://doi.org/10.1063/1.2435074
Vancouver
de Camargo ASS, Jacinto C, Nunes LA de O, Catunda T, Garcia D, Botero ÉR, Eiras JA. Effect of 'Nd POT.3 +' concentration quenching in highly doped lead lanthanum zirconate titanate transparent ferroelectric ceramics [Internet]. Journal of Applied Physics. 2007 ; 101( 5): 053111-1-053111-4.[citado 2024 out. 01 ] Available from: https://doi.org/10.1063/1.2435074
Artigo de periodico
Residual internal stress in partially crystallized photothermorefractive glass: evaluation by nuclear magnetic resonance spectroscopy and first principles calculations (2006)
Zwanziger, J. W.; Zwanziger, U. Werner; Zanotto, E. D.; Rotari, E.; Glebova, L. N.; Glebov, L. B.; Schneider, José Fabian
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: VIDRO CERÂMICO, ESPECTROSCOPIA DE RESSONÂNCIA MAGNÉTICA NUCLEAR, MATERIAIS
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ZWANZIGER, J. W. et al. Residual internal stress in partially crystallized photothermorefractive glass: evaluation by nuclear magnetic resonance spectroscopy and first principles calculations. Journal of Applied Physics, v. 99, n. 8, p. 083511-1-083511-6, 2006Tradução . . Disponível em: https://doi.org/10.1063/1.2191731. Acesso em: 01 out. 2024.
APA
Zwanziger, J. W., Zwanziger, U. W., Zanotto, E. D., Rotari, E., Glebova, L. N., Glebov, L. B., & Schneider, J. F. (2006). Residual internal stress in partially crystallized photothermorefractive glass: evaluation by nuclear magnetic resonance spectroscopy and first principles calculations. Journal of Applied Physics, 99( 8), 083511-1-083511-6. doi:10.1063/1.2191731
NLM
Zwanziger JW, Zwanziger UW, Zanotto ED, Rotari E, Glebova LN, Glebov LB, Schneider JF. Residual internal stress in partially crystallized photothermorefractive glass: evaluation by nuclear magnetic resonance spectroscopy and first principles calculations [Internet]. Journal of Applied Physics. 2006 ; 99( 8): 083511-1-083511-6.[citado 2024 out. 01 ] Available from: https://doi.org/10.1063/1.2191731
Vancouver
Zwanziger JW, Zwanziger UW, Zanotto ED, Rotari E, Glebova LN, Glebov LB, Schneider JF. Residual internal stress in partially crystallized photothermorefractive glass: evaluation by nuclear magnetic resonance spectroscopy and first principles calculations [Internet]. Journal of Applied Physics. 2006 ; 99( 8): 083511-1-083511-6.[citado 2024 out. 01 ] Available from: https://doi.org/10.1063/1.2191731
Artigo de periodico
Raman scattering investigation on structural and chemical disorder generated by laser ablation and mechanical microindentations of InSb single crystal (2006)
Joya, Myriam Rincon; Pizani, Paulo Sérgio; Jasinevicius, Renato Goulart; Samad, Ricardo Elgul; Rossi, Wagner de; Vieira Junior, Nilson Dias
Source: Journal of Applied Physics. Unidade: EESC
Assunto: ESPECTROSCOPIA RAMAN
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ABNT
JOYA, Myriam Rincon et al. Raman scattering investigation on structural and chemical disorder generated by laser ablation and mechanical microindentations of InSb single crystal. Journal of Applied Physics, v. 100, n. 5, p. Se 2006, 2006Tradução . . Disponível em: https://doi.org/10.1063/1.2345052. Acesso em: 01 out. 2024.
APA
Joya, M. R., Pizani, P. S., Jasinevicius, R. G., Samad, R. E., Rossi, W. de, & Vieira Junior, N. D. (2006). Raman scattering investigation on structural and chemical disorder generated by laser ablation and mechanical microindentations of InSb single crystal. Journal of Applied Physics, 100( 5), Se 2006. doi:10.1063/1.2345052
NLM
Joya MR, Pizani PS, Jasinevicius RG, Samad RE, Rossi W de, Vieira Junior ND. Raman scattering investigation on structural and chemical disorder generated by laser ablation and mechanical microindentations of InSb single crystal [Internet]. Journal of Applied Physics. 2006 ; 100( 5): Se 2006.[citado 2024 out. 01 ] Available from: https://doi.org/10.1063/1.2345052
Vancouver
Joya MR, Pizani PS, Jasinevicius RG, Samad RE, Rossi W de, Vieira Junior ND. Raman scattering investigation on structural and chemical disorder generated by laser ablation and mechanical microindentations of InSb single crystal [Internet]. Journal of Applied Physics. 2006 ; 100( 5): Se 2006.[citado 2024 out. 01 ] Available from: https://doi.org/10.1063/1.2345052
Artigo de periodico
Structural and spectroscopic properties of rare-earth ('Nd POT.3+','Er POT.3+', and 'Yb POT.3+') doped transparent lead lanthanum zirconate titanate ceramics (2004)
de Camargo, Andrea Simone Stucchi ; Nunes, Luiz Antônio de Oliveira; Santos, Ivair A.; Garcia, Ducinei; Eiras, José Antonio
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: LASER, MATERIAIS CERÂMICOS, TERRAS RARAS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
DE CAMARGO, Andrea Simone Stucchi et al. Structural and spectroscopic properties of rare-earth ('Nd POT.3+','Er POT.3+', and 'Yb POT.3+') doped transparent lead lanthanum zirconate titanate ceramics. Journal of Applied Physics, v. 95, n. 4, p. 2135-2140, 2004Tradução . . Acesso em: 01 out. 2024.
APA
de Camargo, A. S. S., Nunes, L. A. de O., Santos, I. A., Garcia, D., & Eiras, J. A. (2004). Structural and spectroscopic properties of rare-earth ('Nd POT.3+','Er POT.3+', and 'Yb POT.3+') doped transparent lead lanthanum zirconate titanate ceramics. Journal of Applied Physics, 95( 4), 2135-2140.
NLM
de Camargo ASS, Nunes LA de O, Santos IA, Garcia D, Eiras JA. Structural and spectroscopic properties of rare-earth ('Nd POT.3+','Er POT.3+', and 'Yb POT.3+') doped transparent lead lanthanum zirconate titanate ceramics. Journal of Applied Physics. 2004 ; 95( 4): 2135-2140.[citado 2024 out. 01 ]
Vancouver
de Camargo ASS, Nunes LA de O, Santos IA, Garcia D, Eiras JA. Structural and spectroscopic properties of rare-earth ('Nd POT.3+','Er POT.3+', and 'Yb POT.3+') doped transparent lead lanthanum zirconate titanate ceramics. Journal of Applied Physics. 2004 ; 95( 4): 2135-2140.[citado 2024 out. 01 ]
Artigo de periodico
Magnetic dynamics of single-domain Ni nanoparticles (2003)
Goya, Gerardo Fabían; Fonseca, F C; Jardim, R. F.; Muccillo, R; Carreño, N L V; Longo, E; Leite, E R
Source: Journal of Applied Physics. Unidade: IF
Subjects: MAGNETISMO, PARAMAGNETISMO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GOYA, Gerardo Fabían et al. Magnetic dynamics of single-domain Ni nanoparticles. Journal of Applied Physics, v. 93, n. 10, p. 6531-6533, 2003Tradução . . Disponível em: https://doi.org/10.1063/1.1540032. Acesso em: 01 out. 2024.
APA
Goya, G. F., Fonseca, F. C., Jardim, R. F., Muccillo, R., Carreño, N. L. V., Longo, E., & Leite, E. R. (2003). Magnetic dynamics of single-domain Ni nanoparticles. Journal of Applied Physics, 93( 10), 6531-6533. doi:10.1063/1.1540032
NLM
Goya GF, Fonseca FC, Jardim RF, Muccillo R, Carreño NLV, Longo E, Leite ER. Magnetic dynamics of single-domain Ni nanoparticles [Internet]. Journal of Applied Physics. 2003 ; 93( 10): 6531-6533.[citado 2024 out. 01 ] Available from: https://doi.org/10.1063/1.1540032
Vancouver
Goya GF, Fonseca FC, Jardim RF, Muccillo R, Carreño NLV, Longo E, Leite ER. Magnetic dynamics of single-domain Ni nanoparticles [Internet]. Journal of Applied Physics. 2003 ; 93( 10): 6531-6533.[citado 2024 out. 01 ] Available from: https://doi.org/10.1063/1.1540032
Artigo de periodico
Parallel conductivity of random GaAs/AlGaAs superlattices in regime of controlled vertical disorder (2002)
Pusep, Yuri A.; Chiquito, Adenilson José; Mergulhao, S; Toropov, A I
Source: Journal of Applied Physics. Unidade: IFSC
Assunto: FÍSICA DA MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PUSEP, Yuri A. et al. Parallel conductivity of random GaAs/AlGaAs superlattices in regime of controlled vertical disorder. Journal of Applied Physics, v. 92, n. 7, p. 3830-3834, 2002Tradução . . Disponível em: https://doi.org/10.1063/1.1506002. Acesso em: 01 out. 2024.
APA
Pusep, Y. A., Chiquito, A. J., Mergulhao, S., & Toropov, A. I. (2002). Parallel conductivity of random GaAs/AlGaAs superlattices in regime of controlled vertical disorder. Journal of Applied Physics, 92( 7), 3830-3834. doi:10.1063/1.1506002
NLM
Pusep YA, Chiquito AJ, Mergulhao S, Toropov AI. Parallel conductivity of random GaAs/AlGaAs superlattices in regime of controlled vertical disorder [Internet]. Journal of Applied Physics. 2002 ;92( 7): 3830-3834.[citado 2024 out. 01 ] Available from: https://doi.org/10.1063/1.1506002
Vancouver
Pusep YA, Chiquito AJ, Mergulhao S, Toropov AI. Parallel conductivity of random GaAs/AlGaAs superlattices in regime of controlled vertical disorder [Internet]. Journal of Applied Physics. 2002 ;92( 7): 3830-3834.[citado 2024 out. 01 ] Available from: https://doi.org/10.1063/1.1506002
Artigo de periodico
Raman measurements of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures (2000)
Pusep, Yuri A.; Silva, M. T. O.; Galzerani, J. C.; Rodrigues, S. C. P.; Scolfaro, L. M. R.; Lima, A. P.; Quivy, A. A.; Leite, J. R.; Moshegov, N. T.; Basmaji, Pierre
Source: Journal of Applied Physics. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PUSEP, Yuri A. et al. Raman measurements of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures. Journal of Applied Physics, v. 87, n. 4, p. 1825-1831, 2000Tradução . . Disponível em: https://doi.org/10.1063/1.372097. Acesso em: 01 out. 2024.
APA
Pusep, Y. A., Silva, M. T. O., Galzerani, J. C., Rodrigues, S. C. P., Scolfaro, L. M. R., Lima, A. P., et al. (2000). Raman measurements of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures. Journal of Applied Physics, 87( 4), 1825-1831. doi:10.1063/1.372097
NLM
Pusep YA, Silva MTO, Galzerani JC, Rodrigues SCP, Scolfaro LMR, Lima AP, Quivy AA, Leite JR, Moshegov NT, Basmaji P. Raman measurements of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures [Internet]. Journal of Applied Physics. 2000 ; 87( 4): 1825-1831.[citado 2024 out. 01 ] Available from: https://doi.org/10.1063/1.372097
Vancouver
Pusep YA, Silva MTO, Galzerani JC, Rodrigues SCP, Scolfaro LMR, Lima AP, Quivy AA, Leite JR, Moshegov NT, Basmaji P. Raman measurements of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures [Internet]. Journal of Applied Physics. 2000 ; 87( 4): 1825-1831.[citado 2024 out. 01 ] Available from: https://doi.org/10.1063/1.372097
Artigo de periodico
Raman measurement of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures (2000)
Pusep, Yuri A.; Silva, M T O; Galzerani, J C; Rodrigues, S C P; Scolfaro, Luisa Maria Ribeiro; Lima, A. P.; Quivy, A. A.; Leite, J. R.; Moshegov, N T; Basmaji, P
Source: Journal of Applied Physics. Unidades: IF, IFSC
Assunto: FÍSICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PUSEP, Yuri A. et al. Raman measurement of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures. Journal of Applied Physics, v. 87, n. 4, p. 1825-1831, 2000Tradução . . Disponível em: https://doi.org/10.1063/1.372097. Acesso em: 01 out. 2024.
APA
Pusep, Y. A., Silva, M. T. O., Galzerani, J. C., Rodrigues, S. C. P., Scolfaro, L. M. R., Lima, A. P., et al. (2000). Raman measurement of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures. Journal of Applied Physics, 87( 4), 1825-1831. doi:10.1063/1.372097
NLM
Pusep YA, Silva MTO, Galzerani JC, Rodrigues SCP, Scolfaro LMR, Lima AP, Quivy AA, Leite JR, Moshegov NT, Basmaji P. Raman measurement of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures [Internet]. Journal of Applied Physics. 2000 ; 87( 4): 1825-1831.[citado 2024 out. 01 ] Available from: https://doi.org/10.1063/1.372097
Vancouver
Pusep YA, Silva MTO, Galzerani JC, Rodrigues SCP, Scolfaro LMR, Lima AP, Quivy AA, Leite JR, Moshegov NT, Basmaji P. Raman measurement of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures [Internet]. Journal of Applied Physics. 2000 ; 87( 4): 1825-1831.[citado 2024 out. 01 ] Available from: https://doi.org/10.1063/1.372097
Artigo de periodico
Raman characterization of structural disorder and residual strains in micromachined 'GA''AS' (2000)
Pizani, P S; Lanciotti Jr., F; Jasinevicius, Renato Goulart; Duduch, Jaime Gilberto; Porto, Arthur José Vieira
Source: Journal of Applied Physics. Unidade: EESC
Assunto: MATÉRIA CONDENSADA (PROPRIEDADES MECÂNICAS)
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PIZANI, P S et al. Raman characterization of structural disorder and residual strains in micromachined 'GA''AS'. Journal of Applied Physics, v. 87, n. 3, p. 1280-1283, 2000Tradução . . Disponível em: https://doi.org/10.1063/1.372009. Acesso em: 01 out. 2024.
APA
Pizani, P. S., Lanciotti Jr., F., Jasinevicius, R. G., Duduch, J. G., & Porto, A. J. V. (2000). Raman characterization of structural disorder and residual strains in micromachined 'GA''AS'. Journal of Applied Physics, 87( 3), 1280-1283. doi:10.1063/1.372009
NLM
Pizani PS, Lanciotti Jr. F, Jasinevicius RG, Duduch JG, Porto AJV. Raman characterization of structural disorder and residual strains in micromachined 'GA''AS' [Internet]. Journal of Applied Physics. 2000 ; 87( 3): 1280-1283.[citado 2024 out. 01 ] Available from: https://doi.org/10.1063/1.372009
Vancouver
Pizani PS, Lanciotti Jr. F, Jasinevicius RG, Duduch JG, Porto AJV. Raman characterization of structural disorder and residual strains in micromachined 'GA''AS' [Internet]. Journal of Applied Physics. 2000 ; 87( 3): 1280-1283.[citado 2024 out. 01 ] Available from: https://doi.org/10.1063/1.372009

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