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Artigo de periodico
Sterilization by pure oxygen plasma and by oxygen-hydrogen peroxide plasma: an efficacy study (2008)
Boscariol, Michelle Rigamonti; Moreira, Adir José; Mansano, Ronaldo Domingues ; Kikuchi, Irene Satiko ; Pinto, Terezinha de Jesus Andreoli
Source: International Journal of Food Science and Technology. Unidades: EP, FCF
Subjects: PLASMA, OXIGÊNIO, MICROBIOLOGIA
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ABNT
BOSCARIOL, Michelle Rigamonti et al. Sterilization by pure oxygen plasma and by oxygen-hydrogen peroxide plasma: an efficacy study. International Journal of Food Science and Technology, v. 43, n. 5, p. 170-175, 2008Tradução . . Acesso em: 28 set. 2024.
APA
Boscariol, M. R., Moreira, A. J., Mansano, R. D., Kikuchi, I. S., & Pinto, T. de J. A. (2008). Sterilization by pure oxygen plasma and by oxygen-hydrogen peroxide plasma: an efficacy study. International Journal of Food Science and Technology, 43( 5), 170-175.
NLM
Boscariol MR, Moreira AJ, Mansano RD, Kikuchi IS, Pinto T de JA. Sterilization by pure oxygen plasma and by oxygen-hydrogen peroxide plasma: an efficacy study. International Journal of Food Science and Technology. 2008 ;43( 5): 170-175.[citado 2024 set. 28 ]
Vancouver
Boscariol MR, Moreira AJ, Mansano RD, Kikuchi IS, Pinto T de JA. Sterilization by pure oxygen plasma and by oxygen-hydrogen peroxide plasma: an efficacy study. International Journal of Food Science and Technology. 2008 ;43( 5): 170-175.[citado 2024 set. 28 ]
Artigo de periodico
Design and fabrication of a microelectrode array for iodate quantification in small sample volumes (2006)
Lowinsohn, Denise; Peres, Henrique Estanislau Maldonado ; Kosminsky, Luis; Paixão, Thiago Regis Longo Cesar da ; Ferreira, Tiago Luiz; Ramírez Fernandez, Francisco Javier ; Bertotti, Mauro
Source: Sensors and Actuators B - Chemical. Unidades: EP, IQ
Subjects: VOLTAMETRIA, ELETRODEPOSIÇÃO, ELETROQUÍMICA
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ABNT
LOWINSOHN, Denise et al. Design and fabrication of a microelectrode array for iodate quantification in small sample volumes. Sensors and Actuators B - Chemical, v. 113, n. 1, p. 80-87, 2006Tradução . . Disponível em: https://doi.org/10.1016/j.snb.2005.02.024. Acesso em: 28 set. 2024.
APA
Lowinsohn, D., Peres, H. E. M., Kosminsky, L., Paixão, T. R. L. C. da, Ferreira, T. L., Ramírez Fernandez, F. J., & Bertotti, M. (2006). Design and fabrication of a microelectrode array for iodate quantification in small sample volumes. Sensors and Actuators B - Chemical, 113( 1), 80-87. doi:10.1016/j.snb.2005.02.024
NLM
Lowinsohn D, Peres HEM, Kosminsky L, Paixão TRLC da, Ferreira TL, Ramírez Fernandez FJ, Bertotti M. Design and fabrication of a microelectrode array for iodate quantification in small sample volumes [Internet]. Sensors and Actuators B - Chemical. 2006 ; 113( 1): 80-87.[citado 2024 set. 28 ] Available from: https://doi.org/10.1016/j.snb.2005.02.024
Vancouver
Lowinsohn D, Peres HEM, Kosminsky L, Paixão TRLC da, Ferreira TL, Ramírez Fernandez FJ, Bertotti M. Design and fabrication of a microelectrode array for iodate quantification in small sample volumes [Internet]. Sensors and Actuators B - Chemical. 2006 ; 113( 1): 80-87.[citado 2024 set. 28 ] Available from: https://doi.org/10.1016/j.snb.2005.02.024
Artigo de periodico
Sn 'O IND.2' extended gate field-effect transistor as pH sensor (2006)
Batista, P. D.; Graeff, Carlos Frederico de Oliveira; Ramírez Fernandez, Francisco Javier ; Marques, F. das C.
Source: Brazilian Journal of Physics. Unidades: FFCLRP, EP
Subjects: TRANSISTORES, SENSORES BIOMÉDICOS
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ABNT
BATISTA, P. D. et al. Sn 'O IND.2' extended gate field-effect transistor as pH sensor. Brazilian Journal of Physics, v. 36, n. 2A, p. 478-481, 2006Tradução . . Acesso em: 28 set. 2024.
APA
Batista, P. D., Graeff, C. F. de O., Ramírez Fernandez, F. J., & Marques, F. das C. (2006). Sn 'O IND.2' extended gate field-effect transistor as pH sensor. Brazilian Journal of Physics, 36( 2A), 478-481.
NLM
Batista PD, Graeff CF de O, Ramírez Fernandez FJ, Marques F das C. Sn 'O IND.2' extended gate field-effect transistor as pH sensor. Brazilian Journal of Physics. 2006 ; 36( 2A): 478-481.[citado 2024 set. 28 ]
Vancouver
Batista PD, Graeff CF de O, Ramírez Fernandez FJ, Marques F das C. Sn 'O IND.2' extended gate field-effect transistor as pH sensor. Brazilian Journal of Physics. 2006 ; 36( 2A): 478-481.[citado 2024 set. 28 ]
Artigo de periodico
Improvement on organic compound adsorption and/or detection by using metallic thin films deposited onto highly rough silicon substrates (2005)
Carvalho, Alexsander Tressino de; Silva, Maria Lucia Pereira da; Nascimento Filho, Antonio Pereira do; Jesus, Dosil Pereira de; Santos Filho, Sebastião Gomes dos
Source: Sensors and Actuators B - Chemical. Unidades: IQ, EP
Subjects: FILMES FINOS, COMPOSTOS ORGÂNICOS
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ABNT
CARVALHO, Alexsander Tressino de et al. Improvement on organic compound adsorption and/or detection by using metallic thin films deposited onto highly rough silicon substrates. Sensors and Actuators B - Chemical, v. 108, n. 1-2, p. 947-954, 2005Tradução . . Disponível em: https://doi.org/10.1016/j.snb.2004.11.065. Acesso em: 28 set. 2024.
APA
Carvalho, A. T. de, Silva, M. L. P. da, Nascimento Filho, A. P. do, Jesus, D. P. de, & Santos Filho, S. G. dos. (2005). Improvement on organic compound adsorption and/or detection by using metallic thin films deposited onto highly rough silicon substrates. Sensors and Actuators B - Chemical, 108( 1-2), 947-954. doi:10.1016/j.snb.2004.11.065
NLM
Carvalho AT de, Silva MLP da, Nascimento Filho AP do, Jesus DP de, Santos Filho SG dos. Improvement on organic compound adsorption and/or detection by using metallic thin films deposited onto highly rough silicon substrates [Internet]. Sensors and Actuators B - Chemical. 2005 ; 108( 1-2): 947-954.[citado 2024 set. 28 ] Available from: https://doi.org/10.1016/j.snb.2004.11.065
Vancouver
Carvalho AT de, Silva MLP da, Nascimento Filho AP do, Jesus DP de, Santos Filho SG dos. Improvement on organic compound adsorption and/or detection by using metallic thin films deposited onto highly rough silicon substrates [Internet]. Sensors and Actuators B - Chemical. 2005 ; 108( 1-2): 947-954.[citado 2024 set. 28 ] Available from: https://doi.org/10.1016/j.snb.2004.11.065
Artigo de periodico
Nanostructured films of perylene derivatives: high performance materials for taste sensor applications (2004)
Constantino, Carlos José Leopoldo; Antunes, P. A.; Venâncio, Everaldo Carlos; Consolin, N.; Fonseca, Fernando Josepetti ; Mattoso, Luiz Henrique Capparelli; Aroca, Ricardo F.; Oliveira Junior, Osvaldo Novais de; Riul Junior, Antonio
Source: Sensor Letters. Unidades: EP, IFSC
Assunto: FILMES FINOS
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ABNT
CONSTANTINO, Carlos José Leopoldo et al. Nanostructured films of perylene derivatives: high performance materials for taste sensor applications. Sensor Letters, v. 2, n. 2, p. 95-101, 2004Tradução . . Acesso em: 28 set. 2024.
APA
Constantino, C. J. L., Antunes, P. A., Venâncio, E. C., Consolin, N., Fonseca, F. J., Mattoso, L. H. C., et al. (2004). Nanostructured films of perylene derivatives: high performance materials for taste sensor applications. Sensor Letters, 2( 2), 95-101.
NLM
Constantino CJL, Antunes PA, Venâncio EC, Consolin N, Fonseca FJ, Mattoso LHC, Aroca RF, Oliveira Junior ON de, Riul Junior A. Nanostructured films of perylene derivatives: high performance materials for taste sensor applications. Sensor Letters. 2004 ; 2( 2): 95-101.[citado 2024 set. 28 ]
Vancouver
Constantino CJL, Antunes PA, Venâncio EC, Consolin N, Fonseca FJ, Mattoso LHC, Aroca RF, Oliveira Junior ON de, Riul Junior A. Nanostructured films of perylene derivatives: high performance materials for taste sensor applications. Sensor Letters. 2004 ; 2( 2): 95-101.[citado 2024 set. 28 ]
Artigo de periodico
Sterilization by oxygen plasma (2004)
Moreira, Adir José; Mansano, Ronaldo Domingues ; Pinto, Terezinha de Jesus Andreoli ; Ruas, Ronaldo; Zambon, Luís da Silva ; Silva, Mônica Valero da; Verdonck, Patrick Bernard
Source: Applied Surface Science. Unidades: FCF, EP
Subjects: PLASMA, OXIGÊNIO, MICROBIOLOGIA
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ABNT
MOREIRA, Adir José et al. Sterilization by oxygen plasma. Applied Surface Science, v. 235, n. 1-2, p. 151-155, 2004Tradução . . Disponível em: https://doi.org/10.1016/j.apsusc.2004.05.128. Acesso em: 28 set. 2024.
APA
Moreira, A. J., Mansano, R. D., Pinto, T. de J. A., Ruas, R., Zambon, L. da S., Silva, M. V. da, & Verdonck, P. B. (2004). Sterilization by oxygen plasma. Applied Surface Science, 235( 1-2), 151-155. doi:10.1016/j.apsusc.2004.05.128
NLM
Moreira AJ, Mansano RD, Pinto T de JA, Ruas R, Zambon L da S, Silva MV da, Verdonck PB. Sterilization by oxygen plasma [Internet]. Applied Surface Science. 2004 ; 235( 1-2): 151-155.[citado 2024 set. 28 ] Available from: https://doi.org/10.1016/j.apsusc.2004.05.128
Vancouver
Moreira AJ, Mansano RD, Pinto T de JA, Ruas R, Zambon L da S, Silva MV da, Verdonck PB. Sterilization by oxygen plasma [Internet]. Applied Surface Science. 2004 ; 235( 1-2): 151-155.[citado 2024 set. 28 ] Available from: https://doi.org/10.1016/j.apsusc.2004.05.128
Artigo de periodico
Protective carbon layer for chemical corrosion of stainless steel (2003)
Mansano, Ronaldo Domingues ; Massi, Marcos; Santos, Ana Paula Mousinho dos; Zambom, Luís da Silva ; Gonçalves Neto, Luíz
Source: Diamond and Related Materials. Unidades: EESC, EP
Subjects: FILMES FINOS, CORROSÃO DOS MATERIAIS, AÇO INOXIDÁVEL
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ABNT
MANSANO, Ronaldo Domingues et al. Protective carbon layer for chemical corrosion of stainless steel. Diamond and Related Materials, v. 12, n. 3-7, p. 749-752, 2003Tradução . . Disponível em: https://doi.org/10.1016/s0925-9635(02)00270-4. Acesso em: 28 set. 2024.
APA
Mansano, R. D., Massi, M., Santos, A. P. M. dos, Zambom, L. da S., & Gonçalves Neto, L. (2003). Protective carbon layer for chemical corrosion of stainless steel. Diamond and Related Materials, 12( 3-7), 749-752. doi:10.1016/s0925-9635(02)00270-4
NLM
Mansano RD, Massi M, Santos APM dos, Zambom L da S, Gonçalves Neto L. Protective carbon layer for chemical corrosion of stainless steel [Internet]. Diamond and Related Materials. 2003 ; 12( 3-7): 749-752.[citado 2024 set. 28 ] Available from: https://doi.org/10.1016/s0925-9635(02)00270-4
Vancouver
Mansano RD, Massi M, Santos APM dos, Zambom L da S, Gonçalves Neto L. Protective carbon layer for chemical corrosion of stainless steel [Internet]. Diamond and Related Materials. 2003 ; 12( 3-7): 749-752.[citado 2024 set. 28 ] Available from: https://doi.org/10.1016/s0925-9635(02)00270-4
Artigo de periodico
Use of plasma polymerized highly polar organic compound films for sensor development (2003)
Nascimento Filho, Antonio Pereira do; Silva, Maria Lucia Pereira da; Galeazzo, Elisabete ; Demarquette, Nicole Raymonde
Source: Sensors and Actuators B : Chemical. Unidade: EP
Subjects: POLIMERIZAÇÃO, PLASMA
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ABNT
NASCIMENTO FILHO, Antonio Pereira do et al. Use of plasma polymerized highly polar organic compound films for sensor development. Sensors and Actuators B : Chemical, v. 91, n. 1-3, p. 370-377, 2003Tradução . . Disponível em: https://doi.org/10.1016/s0925-4005(03)00111-4. Acesso em: 28 set. 2024.
APA
Nascimento Filho, A. P. do, Silva, M. L. P. da, Galeazzo, E., & Demarquette, N. R. (2003). Use of plasma polymerized highly polar organic compound films for sensor development. Sensors and Actuators B : Chemical, 91( 1-3), 370-377. doi:10.1016/s0925-4005(03)00111-4
NLM
Nascimento Filho AP do, Silva MLP da, Galeazzo E, Demarquette NR. Use of plasma polymerized highly polar organic compound films for sensor development [Internet]. Sensors and Actuators B : Chemical. 2003 ; 91( 1-3): 370-377.[citado 2024 set. 28 ] Available from: https://doi.org/10.1016/s0925-4005(03)00111-4
Vancouver
Nascimento Filho AP do, Silva MLP da, Galeazzo E, Demarquette NR. Use of plasma polymerized highly polar organic compound films for sensor development [Internet]. Sensors and Actuators B : Chemical. 2003 ; 91( 1-3): 370-377.[citado 2024 set. 28 ] Available from: https://doi.org/10.1016/s0925-4005(03)00111-4
Artigo de periodico
Mechanical and thermophysical properties of PECVD oxynitride films measured by mems (2001)
Guimarães, Marcelo Silva; Sinatora, Amilton ; Aloyo, M. I.; Pereyra, Inés ; Páez Carreño, Marcelo Nelson
Source: Thin Solid Films. Unidade: EP
Subjects: MATERIAIS (PROPRIEDADES MECÂNICAS), MATERIAIS (PROPRIEDADES PLÁSTICAS), ÓXIDO NÍTRICO
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ABNT
GUIMARÃES, Marcelo Silva et al. Mechanical and thermophysical properties of PECVD oxynitride films measured by mems. Thin Solid Films, v. no 2001, p. 626-631, 2001Tradução . . Disponível em: https://doi.org/10.1016/s0040-6090(01)01329-3. Acesso em: 28 set. 2024.
APA
Guimarães, M. S., Sinatora, A., Aloyo, M. I., Pereyra, I., & Páez Carreño, M. N. (2001). Mechanical and thermophysical properties of PECVD oxynitride films measured by mems. Thin Solid Films, no 2001, 626-631. doi:10.1016/s0040-6090(01)01329-3
NLM
Guimarães MS, Sinatora A, Aloyo MI, Pereyra I, Páez Carreño MN. Mechanical and thermophysical properties of PECVD oxynitride films measured by mems [Internet]. Thin Solid Films. 2001 ; no 2001 626-631.[citado 2024 set. 28 ] Available from: https://doi.org/10.1016/s0040-6090(01)01329-3
Vancouver
Guimarães MS, Sinatora A, Aloyo MI, Pereyra I, Páez Carreño MN. Mechanical and thermophysical properties of PECVD oxynitride films measured by mems [Internet]. Thin Solid Films. 2001 ; no 2001 626-631.[citado 2024 set. 28 ] Available from: https://doi.org/10.1016/s0040-6090(01)01329-3
Artigo de periodico
A modern approach to teaching basic experimental Electricity and Electronics (2001)
Consonni, Denise ; Seabra, Antonio Carlos
Source: IEEE Transactions on Education. Unidade: EP
Assunto: ENGENHARIA ELÉTRICA (EDUCAÇÃO)
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ABNT
CONSONNI, Denise e SEABRA, Antonio Carlos. A modern approach to teaching basic experimental Electricity and Electronics. IEEE Transactions on Education, v. 44, n. 1, p. 5-15, 2001Tradução . . Disponível em: https://doi.org/10.1109/13.912704. Acesso em: 28 set. 2024.
APA
Consonni, D., & Seabra, A. C. (2001). A modern approach to teaching basic experimental Electricity and Electronics. IEEE Transactions on Education, 44( 1), 5-15. doi:10.1109/13.912704
NLM
Consonni D, Seabra AC. A modern approach to teaching basic experimental Electricity and Electronics [Internet]. IEEE Transactions on Education. 2001 ; 44( 1): 5-15.[citado 2024 set. 28 ] Available from: https://doi.org/10.1109/13.912704
Vancouver
Consonni D, Seabra AC. A modern approach to teaching basic experimental Electricity and Electronics [Internet]. IEEE Transactions on Education. 2001 ; 44( 1): 5-15.[citado 2024 set. 28 ] Available from: https://doi.org/10.1109/13.912704
Artigo de periodico
Design and fabrication of a hybrid diffractive optical device for multiple-line generation over a wide angle (2001)
Gonçalves Neto, Luiz; Roberto, Luciana Brassolatti; Verdonck, Patrick Bernard; Mansano, Ronaldo Domingues ; Cirino, Giuseppe Antonio; Stefani, Mario Antonio
Source: Applied Optics. Unidades: EESC, EP
Assunto: ÓPTICA
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ABNT
GONÇALVES NETO, Luiz et al. Design and fabrication of a hybrid diffractive optical device for multiple-line generation over a wide angle. Applied Optics, v. 40, n. Ja 2001, p. 211-218, 2001Tradução . . Disponível em: https://doi.org/10.1364/ao.40.000211. Acesso em: 28 set. 2024.
APA
Gonçalves Neto, L., Roberto, L. B., Verdonck, P. B., Mansano, R. D., Cirino, G. A., & Stefani, M. A. (2001). Design and fabrication of a hybrid diffractive optical device for multiple-line generation over a wide angle. Applied Optics, 40( Ja 2001), 211-218. doi:10.1364/ao.40.000211
NLM
Gonçalves Neto L, Roberto LB, Verdonck PB, Mansano RD, Cirino GA, Stefani MA. Design and fabrication of a hybrid diffractive optical device for multiple-line generation over a wide angle [Internet]. Applied Optics. 2001 ; 40( Ja 2001): 211-218.[citado 2024 set. 28 ] Available from: https://doi.org/10.1364/ao.40.000211
Vancouver
Gonçalves Neto L, Roberto LB, Verdonck PB, Mansano RD, Cirino GA, Stefani MA. Design and fabrication of a hybrid diffractive optical device for multiple-line generation over a wide angle [Internet]. Applied Optics. 2001 ; 40( Ja 2001): 211-218.[citado 2024 set. 28 ] Available from: https://doi.org/10.1364/ao.40.000211
Artigo de periodico
Simultaneous extraction of the silicon film and front oxide thicknesses on fully depleted SOI nMOSFETs (2000)
Nicolett, Aparecido Sirley; Martino, João Antonio ; Simoen, Eddy ; Claeys, Cor
Source: Solid-State Electronics. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
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ABNT
NICOLETT, Aparecido Sirley et al. Simultaneous extraction of the silicon film and front oxide thicknesses on fully depleted SOI nMOSFETs. Solid-State Electronics, v. No 2000, n. 11, p. 1961-1969, 2000Tradução . . Disponível em: https://doi.org/10.1016/s0038-1101(00)00166-0. Acesso em: 28 set. 2024.
APA
Nicolett, A. S., Martino, J. A., Simoen, E., & Claeys, C. (2000). Simultaneous extraction of the silicon film and front oxide thicknesses on fully depleted SOI nMOSFETs. Solid-State Electronics, No 2000( 11), 1961-1969. doi:10.1016/s0038-1101(00)00166-0
NLM
Nicolett AS, Martino JA, Simoen E, Claeys C. Simultaneous extraction of the silicon film and front oxide thicknesses on fully depleted SOI nMOSFETs [Internet]. Solid-State Electronics. 2000 ; No 2000( 11): 1961-1969.[citado 2024 set. 28 ] Available from: https://doi.org/10.1016/s0038-1101(00)00166-0
Vancouver
Nicolett AS, Martino JA, Simoen E, Claeys C. Simultaneous extraction of the silicon film and front oxide thicknesses on fully depleted SOI nMOSFETs [Internet]. Solid-State Electronics. 2000 ; No 2000( 11): 1961-1969.[citado 2024 set. 28 ] Available from: https://doi.org/10.1016/s0038-1101(00)00166-0
Artigo de periodico
Analog performance and application of graded-channel fully depleted SOI MOSFETs (2000)
Pavanello, Marcelo Antonio ; Martino, João Antonio ; Dessard, Vincent; Flandre, Denis
Source: Solid-State Electronics. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
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ABNT
PAVANELLO, Marcelo Antonio et al. Analog performance and application of graded-channel fully depleted SOI MOSFETs. Solid-State Electronics, v. 44, n. 7, p. 1219-1222, 2000Tradução . . Disponível em: https://doi.org/10.1016/s0038-1101(00)00034-4. Acesso em: 28 set. 2024.
APA
Pavanello, M. A., Martino, J. A., Dessard, V., & Flandre, D. (2000). Analog performance and application of graded-channel fully depleted SOI MOSFETs. Solid-State Electronics, 44( 7), 1219-1222. doi:10.1016/s0038-1101(00)00034-4
NLM
Pavanello MA, Martino JA, Dessard V, Flandre D. Analog performance and application of graded-channel fully depleted SOI MOSFETs [Internet]. Solid-State Electronics. 2000 ; 44( 7): 1219-1222.[citado 2024 set. 28 ] Available from: https://doi.org/10.1016/s0038-1101(00)00034-4
Vancouver
Pavanello MA, Martino JA, Dessard V, Flandre D. Analog performance and application of graded-channel fully depleted SOI MOSFETs [Internet]. Solid-State Electronics. 2000 ; 44( 7): 1219-1222.[citado 2024 set. 28 ] Available from: https://doi.org/10.1016/s0038-1101(00)00034-4
Artigo de periodico
Graded-channel fully depleted silicon-on-insulator nMOSFET for reducing the parasitic bipolar effects (2000)
Pavanello, Marcelo Antonio ; Martino, João Antonio ; Flandre, Denis
Source: Solid-State Electronics. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
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ABNT
PAVANELLO, Marcelo Antonio e MARTINO, João Antonio e FLANDRE, Denis. Graded-channel fully depleted silicon-on-insulator nMOSFET for reducing the parasitic bipolar effects. Solid-State Electronics, v. 44, n. 6, p. 917-922, 2000Tradução . . Disponível em: https://doi.org/10.1016/s0038-1101(00)00032-0. Acesso em: 28 set. 2024.
APA
Pavanello, M. A., Martino, J. A., & Flandre, D. (2000). Graded-channel fully depleted silicon-on-insulator nMOSFET for reducing the parasitic bipolar effects. Solid-State Electronics, 44( 6), 917-922. doi:10.1016/s0038-1101(00)00032-0
NLM
Pavanello MA, Martino JA, Flandre D. Graded-channel fully depleted silicon-on-insulator nMOSFET for reducing the parasitic bipolar effects [Internet]. Solid-State Electronics. 2000 ; 44( 6): 917-922.[citado 2024 set. 28 ] Available from: https://doi.org/10.1016/s0038-1101(00)00032-0
Vancouver
Pavanello MA, Martino JA, Flandre D. Graded-channel fully depleted silicon-on-insulator nMOSFET for reducing the parasitic bipolar effects [Internet]. Solid-State Electronics. 2000 ; 44( 6): 917-922.[citado 2024 set. 28 ] Available from: https://doi.org/10.1016/s0038-1101(00)00032-0
Artigo de periodico
Extraction of the lightly doped drain concentration of fully depleted SOI nMOSFETs using the back gate bias effect (2000)
Nicolett, Aparecido Sirley; Martino, João Antonio ; Simoen, Eddy ; Claeys, Cor
Source: Solid-State Electronics. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
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ABNT
NICOLETT, Aparecido Sirley et al. Extraction of the lightly doped drain concentration of fully depleted SOI nMOSFETs using the back gate bias effect. Solid-State Electronics, v. 44, n. 4, p. 677-684, 2000Tradução . . Disponível em: https://doi.org/10.1016/s0038-1101(99)00293-2. Acesso em: 28 set. 2024.
APA
Nicolett, A. S., Martino, J. A., Simoen, E., & Claeys, C. (2000). Extraction of the lightly doped drain concentration of fully depleted SOI nMOSFETs using the back gate bias effect. Solid-State Electronics, 44( 4), 677-684. doi:10.1016/s0038-1101(99)00293-2
NLM
Nicolett AS, Martino JA, Simoen E, Claeys C. Extraction of the lightly doped drain concentration of fully depleted SOI nMOSFETs using the back gate bias effect [Internet]. Solid-State Electronics. 2000 ; 44( 4): 677-684.[citado 2024 set. 28 ] Available from: https://doi.org/10.1016/s0038-1101(99)00293-2
Vancouver
Nicolett AS, Martino JA, Simoen E, Claeys C. Extraction of the lightly doped drain concentration of fully depleted SOI nMOSFETs using the back gate bias effect [Internet]. Solid-State Electronics. 2000 ; 44( 4): 677-684.[citado 2024 set. 28 ] Available from: https://doi.org/10.1016/s0038-1101(99)00293-2
Artigo de periodico
Effects of the methane content on the characteristics of diamond-like carbon films produced by sputtering (2000)
Mansano, Ronaldo Domingues ; Massi, Marcos; Zambom, Luís da Silva ; Verdonck, Patrick Bernard; Nogueira, P. M.; Maciel, H. S.; Otani, Choyu
Source: Thin Solid Films. Unidade: EP
Assunto: FILMES
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ABNT
MANSANO, Ronaldo Domingues et al. Effects of the methane content on the characteristics of diamond-like carbon films produced by sputtering. Thin Solid Films, n. 373, p. 243-246, 2000Tradução . . Disponível em: https://doi.org/10.1016/s0040-6090(00)01088-9. Acesso em: 28 set. 2024.
APA
Mansano, R. D., Massi, M., Zambom, L. da S., Verdonck, P. B., Nogueira, P. M., Maciel, H. S., & Otani, C. (2000). Effects of the methane content on the characteristics of diamond-like carbon films produced by sputtering. Thin Solid Films, ( 373), 243-246. doi:10.1016/s0040-6090(00)01088-9
NLM
Mansano RD, Massi M, Zambom L da S, Verdonck PB, Nogueira PM, Maciel HS, Otani C. Effects of the methane content on the characteristics of diamond-like carbon films produced by sputtering [Internet]. Thin Solid Films. 2000 ;( 373): 243-246.[citado 2024 set. 28 ] Available from: https://doi.org/10.1016/s0040-6090(00)01088-9
Vancouver
Mansano RD, Massi M, Zambom L da S, Verdonck PB, Nogueira PM, Maciel HS, Otani C. Effects of the methane content on the characteristics of diamond-like carbon films produced by sputtering [Internet]. Thin Solid Films. 2000 ;( 373): 243-246.[citado 2024 set. 28 ] Available from: https://doi.org/10.1016/s0040-6090(00)01088-9
Artigo de periodico
Unbiased and stable leakage-based adaptive filters (1999)
Nascimento, Vítor Heloiz ; Sayed, Ali Hussein
Source: IEEE Transactions on Signal Processing. Unidade: EP
Assunto: FILTROS ELÉTRICOS DIGITAIS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
NASCIMENTO, Vítor Heloiz e SAYED, Ali Hussein. Unbiased and stable leakage-based adaptive filters. IEEE Transactions on Signal Processing, v. 47, n. 12, p. 3261-3276, 1999Tradução . . Disponível em: https://doi.org/10.1109/78.806071. Acesso em: 28 set. 2024.
APA
Nascimento, V. H., & Sayed, A. H. (1999). Unbiased and stable leakage-based adaptive filters. IEEE Transactions on Signal Processing, 47( 12), 3261-3276. doi:10.1109/78.806071
NLM
Nascimento VH, Sayed AH. Unbiased and stable leakage-based adaptive filters [Internet]. IEEE Transactions on Signal Processing. 1999 ; 47( 12): 3261-3276.[citado 2024 set. 28 ] Available from: https://doi.org/10.1109/78.806071
Vancouver
Nascimento VH, Sayed AH. Unbiased and stable leakage-based adaptive filters [Internet]. IEEE Transactions on Signal Processing. 1999 ; 47( 12): 3261-3276.[citado 2024 set. 28 ] Available from: https://doi.org/10.1109/78.806071
Artigo de periodico
LPCVD deposition of silicon nitride assisted by high density plasmas (1999)
Zambom, Luís da Silva ; Mansano, Ronaldo Domingues ; Furlan, Rogério ; Verdonck, Patrick Bernard
Source: Thin Solid Films. Unidade: EP
Assunto: FILMES FINOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ZAMBOM, Luís da Silva et al. LPCVD deposition of silicon nitride assisted by high density plasmas. Thin Solid Films, v. 343-344, p. 299-301, 1999Tradução . . Disponível em: https://doi.org/10.1016/s0040-6090(98)01587-9. Acesso em: 28 set. 2024.
APA
Zambom, L. da S., Mansano, R. D., Furlan, R., & Verdonck, P. B. (1999). LPCVD deposition of silicon nitride assisted by high density plasmas. Thin Solid Films, 343-344, 299-301. doi:10.1016/s0040-6090(98)01587-9
NLM
Zambom L da S, Mansano RD, Furlan R, Verdonck PB. LPCVD deposition of silicon nitride assisted by high density plasmas [Internet]. Thin Solid Films. 1999 ; 343-344 299-301.[citado 2024 set. 28 ] Available from: https://doi.org/10.1016/s0040-6090(98)01587-9
Vancouver
Zambom L da S, Mansano RD, Furlan R, Verdonck PB. LPCVD deposition of silicon nitride assisted by high density plasmas [Internet]. Thin Solid Films. 1999 ; 343-344 299-301.[citado 2024 set. 28 ] Available from: https://doi.org/10.1016/s0040-6090(98)01587-9
Artigo de periodico
Mechanisms of surface roughness induced in silicon by fluorine containing plasmas (1997)
Mansano, Ronaldo Domingues ; Verdonck, Patrick Bernard; Maciel, Homero Santiago
Source: Vaccum. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MANSANO, Ronaldo Domingues e VERDONCK, Patrick Bernard e MACIEL, Homero Santiago. Mechanisms of surface roughness induced in silicon by fluorine containing plasmas. Vaccum, v. 48, n. 7-9, p. 677-679, 1997Tradução . . Disponível em: https://doi.org/10.1016/s0042-207x(97)00067-5. Acesso em: 28 set. 2024.
APA
Mansano, R. D., Verdonck, P. B., & Maciel, H. S. (1997). Mechanisms of surface roughness induced in silicon by fluorine containing plasmas. Vaccum, 48( 7-9), 677-679. doi:10.1016/s0042-207x(97)00067-5
NLM
Mansano RD, Verdonck PB, Maciel HS. Mechanisms of surface roughness induced in silicon by fluorine containing plasmas [Internet]. Vaccum. 1997 ; 48( 7-9): 677-679.[citado 2024 set. 28 ] Available from: https://doi.org/10.1016/s0042-207x(97)00067-5
Vancouver
Mansano RD, Verdonck PB, Maciel HS. Mechanisms of surface roughness induced in silicon by fluorine containing plasmas [Internet]. Vaccum. 1997 ; 48( 7-9): 677-679.[citado 2024 set. 28 ] Available from: https://doi.org/10.1016/s0042-207x(97)00067-5
Artigo de periodico
The role of the species formed in PECVD systems on the density of state of a Si:H films (1990)
Martins, R.; Vieira, M.; Fortunato, E.; Santos, M.; Dirani, Ely Antonio Tadeu ; Carvalho, N.; Baia, I.; Guimarães, I.
Source: Materials Research Society Symposium Proceedings. Unidade: EP
Assunto: DISPOSITIVOS ELETRÔNICOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MARTINS, R. et al. The role of the species formed in PECVD systems on the density of state of a Si:H films. Materials Research Society Symposium Proceedings, v. 192, p. 175-180, 1990Tradução . . Acesso em: 28 set. 2024.
APA
Martins, R., Vieira, M., Fortunato, E., Santos, M., Dirani, E. A. T., Carvalho, N., et al. (1990). The role of the species formed in PECVD systems on the density of state of a Si:H films. Materials Research Society Symposium Proceedings, 192, 175-180.
NLM
Martins R, Vieira M, Fortunato E, Santos M, Dirani EAT, Carvalho N, Baia I, Guimarães I. The role of the species formed in PECVD systems on the density of state of a Si:H films. Materials Research Society Symposium Proceedings. 1990 ; 192 175-180.[citado 2024 set. 28 ]
Vancouver
Martins R, Vieira M, Fortunato E, Santos M, Dirani EAT, Carvalho N, Baia I, Guimarães I. The role of the species formed in PECVD systems on the density of state of a Si:H films. Materials Research Society Symposium Proceedings. 1990 ; 192 175-180.[citado 2024 set. 28 ]

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