Application of quaternary AlInGaN-based alloys for light emission devices (2011)
Source: Optoelectronics: materials and techniques. Unidade: IFSC
Subjects: EMISSÃO DA LUZ, DISPOSITIVOS ÓPTICOS
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RODRIGUES, Sara C. P. et al. Application of quaternary AlInGaN-based alloys for light emission devices. Optoelectronics: materials and techniques. Tradução . Weinheim: Wiley-VCH, 2011. . Disponível em: https://doi.org/10.5772/22811. Acesso em: 12 nov. 2024.APA
Rodrigues, S. C. P., Sipahi, G. M., Scolfaro, L., & Silva Junior, E. F. (2011). Application of quaternary AlInGaN-based alloys for light emission devices. In Optoelectronics: materials and techniques. Weinheim: Wiley-VCH. doi:10.5772/22811NLM
Rodrigues SCP, Sipahi GM, Scolfaro L, Silva Junior EF. Application of quaternary AlInGaN-based alloys for light emission devices [Internet]. In: Optoelectronics: materials and techniques. Weinheim: Wiley-VCH; 2011. [citado 2024 nov. 12 ] Available from: https://doi.org/10.5772/22811Vancouver
Rodrigues SCP, Sipahi GM, Scolfaro L, Silva Junior EF. Application of quaternary AlInGaN-based alloys for light emission devices [Internet]. In: Optoelectronics: materials and techniques. Weinheim: Wiley-VCH; 2011. [citado 2024 nov. 12 ] Available from: https://doi.org/10.5772/22811