Spin-orbit interaction in GaAs wells: from one to two subbands (2015)
Source: Physical Review B. Unidade: IFSC
Subjects: SEMICONDUTORES, CAMPO MAGNÉTICO, FÍSICA TEÓRICA
ABNT
FU, Jiyong e EGUES, José Carlos. Spin-orbit interaction in GaAs wells: from one to two subbands. Physical Review B, v. 91, n. 7, p. 075408-1-075408-7, 2015Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.91.075408. Acesso em: 24 jul. 2024.APA
Fu, J., & Egues, J. C. (2015). Spin-orbit interaction in GaAs wells: from one to two subbands. Physical Review B, 91( 7), 075408-1-075408-7. doi:10.1103/PhysRevB.91.075408NLM
Fu J, Egues JC. Spin-orbit interaction in GaAs wells: from one to two subbands [Internet]. Physical Review B. 2015 ; 91( 7): 075408-1-075408-7.[citado 2024 jul. 24 ] Available from: https://doi.org/10.1103/PhysRevB.91.075408Vancouver
Fu J, Egues JC. Spin-orbit interaction in GaAs wells: from one to two subbands [Internet]. Physical Review B. 2015 ; 91( 7): 075408-1-075408-7.[citado 2024 jul. 24 ] Available from: https://doi.org/10.1103/PhysRevB.91.075408