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Filtros : "POÇOS QUÂNTICOS" "Nanoscale Research Letters" Removidos: "França" "National High Magnetic Field Laboratory, Tallahassee, Florida, USA" Limpar

Filtros

Artigo de periodico
Photoconductivity relaxation mechanisms of InGaAs/GaAs quantum dot chain structures (2017)
Kondratenko, Serhiy V.; Iliash, Sviatoslav A.; Vakulenko, Oleg V.; Mazur, Yuriy I.; Benamara, Mourad; Marega Júnior, Euclydes; Salamo, Gregory J.
Source: Nanoscale Research Letters. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, FOTOCONDUTIVIDADE, SEMICONDUTORES, NANOPARTÍCULAS, POÇOS QUÂNTICOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
KONDRATENKO, Serhiy V. et al. Photoconductivity relaxation mechanisms of InGaAs/GaAs quantum dot chain structures. Nanoscale Research Letters, v. 12, p. 183-1-183-7, 2017Tradução . . Disponível em: https://doi.org/10.1186/s11671-017-1954-7. Acesso em: 05 jul. 2024.
APA
Kondratenko, S. V., Iliash, S. A., Vakulenko, O. V., Mazur, Y. I., Benamara, M., Marega Júnior, E., & Salamo, G. J. (2017). Photoconductivity relaxation mechanisms of InGaAs/GaAs quantum dot chain structures. Nanoscale Research Letters, 12, 183-1-183-7. doi:10.1186/s11671-017-1954-7
NLM
Kondratenko SV, Iliash SA, Vakulenko OV, Mazur YI, Benamara M, Marega Júnior E, Salamo GJ. Photoconductivity relaxation mechanisms of InGaAs/GaAs quantum dot chain structures [Internet]. Nanoscale Research Letters. 2017 ; 12 183-1-183-7.[citado 2024 jul. 05 ] Available from: https://doi.org/10.1186/s11671-017-1954-7
Vancouver
Kondratenko SV, Iliash SA, Vakulenko OV, Mazur YI, Benamara M, Marega Júnior E, Salamo GJ. Photoconductivity relaxation mechanisms of InGaAs/GaAs quantum dot chain structures [Internet]. Nanoscale Research Letters. 2017 ; 12 183-1-183-7.[citado 2024 jul. 05 ] Available from: https://doi.org/10.1186/s11671-017-1954-7
Artigo de periodico
Anisotropic confinement, electronic coupling and strain induced effects detected by valence-band anisotropy in self-assembled quantum dots (2011)
Villegas-Lelovsky, L.; Teodoro, M. D.; Richard, V. Lopez; Calseverino, C.; Malachias, A.; Marega Júnior, Euclydes; Liang, B. L.; Mazur, Yu I.; Marques, G. E.; Trallero-Giner, C.; Salamo, G. J.
Source: Nanoscale Research Letters. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, POÇOS QUÂNTICOS, DIFRAÇÃO POR RAIOS X
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
VILLEGAS-LELOVSKY, L. et al. Anisotropic confinement, electronic coupling and strain induced effects detected by valence-band anisotropy in self-assembled quantum dots. Nanoscale Research Letters, v. 6, n. 1, p. 56-1-56-12, 2011Tradução . . Disponível em: https://doi.org/10.1007/s11671-010-9786-8. Acesso em: 05 jul. 2024.
APA
Villegas-Lelovsky, L., Teodoro, M. D., Richard, V. L., Calseverino, C., Malachias, A., Marega Júnior, E., et al. (2011). Anisotropic confinement, electronic coupling and strain induced effects detected by valence-band anisotropy in self-assembled quantum dots. Nanoscale Research Letters, 6( 1), 56-1-56-12. doi:10.1007/s11671-010-9786-8
NLM
Villegas-Lelovsky L, Teodoro MD, Richard VL, Calseverino C, Malachias A, Marega Júnior E, Liang BL, Mazur YI, Marques GE, Trallero-Giner C, Salamo GJ. Anisotropic confinement, electronic coupling and strain induced effects detected by valence-band anisotropy in self-assembled quantum dots [Internet]. Nanoscale Research Letters. 2011 ; 6( 1): 56-1-56-12.[citado 2024 jul. 05 ] Available from: https://doi.org/10.1007/s11671-010-9786-8
Vancouver
Villegas-Lelovsky L, Teodoro MD, Richard VL, Calseverino C, Malachias A, Marega Júnior E, Liang BL, Mazur YI, Marques GE, Trallero-Giner C, Salamo GJ. Anisotropic confinement, electronic coupling and strain induced effects detected by valence-band anisotropy in self-assembled quantum dots [Internet]. Nanoscale Research Letters. 2011 ; 6( 1): 56-1-56-12.[citado 2024 jul. 05 ] Available from: https://doi.org/10.1007/s11671-010-9786-8

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