Realistic g-factors and k.p parameters for III-V semiconductors from 14-band k.p Hamiltonian (2019)
- Authors:
- USP affiliated authors: SILVA, JUAREZ LOPES FERREIRA DA - IQSC ; SIPAHI, GUILHERME MATOS - IFSC ; BASTOS, CARLOS MACIEL DE OLIVEIRA - IFSC
- Unidades: IQSC; IFSC
- Subjects: SEMICONDUTORES; DISPOSITIVOS ELETRÔNICOS
- Language: Inglês
- Imprenta:
- Publisher: Universidade de São Paulo - USP, Instituto de Física de São Carlos - IFSC
- Publisher place: São Carlos
- Date published: 2019
- Source:
- Título do periódico: Book of abstracts
- Conference titles: Semana Integrada do Instituto de Física de São Carlos - SIFSC
-
ABNT
BASTOS, Carlos Maciel de Oliveira e SILVA, Juarez Lopes Ferreira da e SIPAHI, Guilherme Matos. Realistic g-factors and k.p parameters for III-V semiconductors from 14-band k.p Hamiltonian. 2019, Anais.. São Carlos: Universidade de São Paulo - USP, Instituto de Física de São Carlos - IFSC, 2019. Disponível em: https://repositorio.usp.br/directbitstream/4f96bbd6-da99-439f-bd7e-e2a817583000/P18577.pdf. Acesso em: 23 abr. 2024. -
APA
Bastos, C. M. de O., Silva, J. L. F. da, & Sipahi, G. M. (2019). Realistic g-factors and k.p parameters for III-V semiconductors from 14-band k.p Hamiltonian. In Book of abstracts. São Carlos: Universidade de São Paulo - USP, Instituto de Física de São Carlos - IFSC. Recuperado de https://repositorio.usp.br/directbitstream/4f96bbd6-da99-439f-bd7e-e2a817583000/P18577.pdf -
NLM
Bastos CM de O, Silva JLF da, Sipahi GM. Realistic g-factors and k.p parameters for III-V semiconductors from 14-band k.p Hamiltonian [Internet]. Book of abstracts. 2019 ;[citado 2024 abr. 23 ] Available from: https://repositorio.usp.br/directbitstream/4f96bbd6-da99-439f-bd7e-e2a817583000/P18577.pdf -
Vancouver
Bastos CM de O, Silva JLF da, Sipahi GM. Realistic g-factors and k.p parameters for III-V semiconductors from 14-band k.p Hamiltonian [Internet]. Book of abstracts. 2019 ;[citado 2024 abr. 23 ] Available from: https://repositorio.usp.br/directbitstream/4f96bbd6-da99-439f-bd7e-e2a817583000/P18577.pdf - Ab-initio investigation of structural stability and exfoliation energies in transition metal dichalcogenides based on Ti-, V-, and Mo-group elements
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