Reducing the surface area of black silicon by optically equivalent structures (2020)
- Authors:
- USP affiliated authors: MARTINS, EMILIANO REZENDE - EESC ; ARRUDA, GUILHERME SIMONETI DE - EESC ; MARTINS, AUGUSTO - EESC
- Unidade: EESC
- DOI: 10.1109/JPHOTOV.2019.2945912
- Subjects: ÓPTICA; CÉLULAS SOLARES; MATERIAIS NANOESTRUTURADOS; ENGENHARIA ELÉTRICA
- Agências de fomento:
- Language: Inglês
- Imprenta:
- Publisher place: Piscataway, NJ, USA
- Date published: 2020
- Source:
- Título do periódico: IEEE Journal of Photovoltaics
- ISSN: 2156-3381
- Volume/Número/Paginação/Ano: v. 10, n. 1, Article number 8880473, p. 41-45, Jan. 2020
- Este periódico é de assinatura
- Este artigo é de acesso aberto
- URL de acesso aberto
- Cor do Acesso Aberto: green
-
ABNT
ARRUDA, Guilherme Simonetti et al. Reducing the surface area of black silicon by optically equivalent structures. IEEE Journal of Photovoltaics, v. 10, n. Ja 2020, p. 41-45, 2020Tradução . . Disponível em: https://doi.org/10.1109/JPHOTOV.2019.2945912. Acesso em: 28 set. 2024. -
APA
Arruda, G. S., Juntao, L., Martins, A., Kezheng, L., Krauss, T. F., & Martins, E. R. (2020). Reducing the surface area of black silicon by optically equivalent structures. IEEE Journal of Photovoltaics, 10( Ja 2020), 41-45. doi:10.1109/JPHOTOV.2019.2945912 -
NLM
Arruda GS, Juntao L, Martins A, Kezheng L, Krauss TF, Martins ER. Reducing the surface area of black silicon by optically equivalent structures [Internet]. IEEE Journal of Photovoltaics. 2020 ; 10( Ja 2020): 41-45.[citado 2024 set. 28 ] Available from: https://doi.org/10.1109/JPHOTOV.2019.2945912 -
Vancouver
Arruda GS, Juntao L, Martins A, Kezheng L, Krauss TF, Martins ER. Reducing the surface area of black silicon by optically equivalent structures [Internet]. IEEE Journal of Photovoltaics. 2020 ; 10( Ja 2020): 41-45.[citado 2024 set. 28 ] Available from: https://doi.org/10.1109/JPHOTOV.2019.2945912 - Interplay between optical and electrical properties of nanostructured surfaces in crystalline silicon solar cells
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Informações sobre o DOI: 10.1109/JPHOTOV.2019.2945912 (Fonte: oaDOI API)
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