Large anisotropic spin relaxation time of exciton bound to donor states in triple quantum wells (2017)
- Authors:
- USP affiliated authors: HERNANDEZ, FELIX GUILLERMO GONZALEZ - IF ; GUSEV, GENNADY - IF
- Unidade: IF
- Subjects: SPIN; CONDENSADO DE BOSE-EINSTEIN
- Language: Inglês
- Imprenta:
-
ABNT
ULLAH, S. et al. Large anisotropic spin relaxation time of exciton bound to donor states in triple quantum wells. . São Paulo: Instituto de Física, Universidade de São Paulo. Disponível em: https://arxiv.org/abs/1703.07156. Acesso em: 13 fev. 2026. , 2017 -
APA
Ullah, S., Bakarov, A. K., Gonzalez Hernandez, F. G., & Gusev, G. M. (2017). Large anisotropic spin relaxation time of exciton bound to donor states in triple quantum wells. São Paulo: Instituto de Física, Universidade de São Paulo. Recuperado de https://arxiv.org/abs/1703.07156 -
NLM
Ullah S, Bakarov AK, Gonzalez Hernandez FG, Gusev GM. Large anisotropic spin relaxation time of exciton bound to donor states in triple quantum wells [Internet]. 2017 ;[citado 2026 fev. 13 ] Available from: https://arxiv.org/abs/1703.07156 -
Vancouver
Ullah S, Bakarov AK, Gonzalez Hernandez FG, Gusev GM. Large anisotropic spin relaxation time of exciton bound to donor states in triple quantum wells [Internet]. 2017 ;[citado 2026 fev. 13 ] Available from: https://arxiv.org/abs/1703.07156 - Optically-detected long-lived spin coherence in multilayer systems: double and triple quantum wells
- Robustness of spin polarization against temperature in multilayer structure: triple quantum well
- Tailoring multilayer quantum wells for spin devices
- Gate control of the spin mobility through the modi cation of the spin-orbit interaction in two-dimensional systems
- Macroscopic transport of a current-induced spin polarization
- Two-dimensional topological insulator state in double HgTe quantum well
- Long-lived spin coherence of a two-dimensional electron gas in a wide quantum well
- Resonant optical control of the electrically-induced spin polarization by periodic excitation
- Tailoring multilayer quantum wells for spintronic devices
- Tuning of the Landé g-factor in 'AL' IND. x''GA' IND. 1−x''AS'/'AL''AS' single and double quantum wells
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