Nanoscale characterization of bismuth telluride epitaxic layers by advanced X-ray analysis (2016)
- Authors:
- Autor USP: MORELHAO, SERGIO LUIZ - IF
- Unidade: IF
- Subjects: SEMICONDUTORES; RAIOS X
- Language: Inglês
- Imprenta:
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ABNT
MORELHÃO, Sergio Luiz et al. Nanoscale characterization of bismuth telluride epitaxic layers by advanced X-ray analysis. . São Paulo: Instituto de Física, Universidade de São Paulo. Disponível em: https://arxiv.org/pdf/1612.09386.pdf. Acesso em: 23 abr. 2024. , 2016 -
APA
Morelhão, S. L., Fornari, C. I., Rappl, P. H. O., & Abramof, E. (2016). Nanoscale characterization of bismuth telluride epitaxic layers by advanced X-ray analysis. São Paulo: Instituto de Física, Universidade de São Paulo. Recuperado de https://arxiv.org/pdf/1612.09386.pdf -
NLM
Morelhão SL, Fornari CI, Rappl PHO, Abramof E. Nanoscale characterization of bismuth telluride epitaxic layers by advanced X-ray analysis [Internet]. 2016 ;[citado 2024 abr. 23 ] Available from: https://arxiv.org/pdf/1612.09386.pdf -
Vancouver
Morelhão SL, Fornari CI, Rappl PHO, Abramof E. Nanoscale characterization of bismuth telluride epitaxic layers by advanced X-ray analysis [Internet]. 2016 ;[citado 2024 abr. 23 ] Available from: https://arxiv.org/pdf/1612.09386.pdf - High-resolution synchrotron radiation Renninger scan to examine hybrid reflections in InGaP/GaAs(001)
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