Journal of Semiconductors (2015)
- Authors:
- Autor USP: GUOQIANG, HAI - IFSC
- Unidade: IFSC
- Subjects: ENGENHARIA ELÉTRICA; SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Publisher: Institute of Physics - IOP
- Publisher place: Bristol
- Date published: 2015
- Source:
- ISSN: 1674-4926
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ABNT
Journal of Semiconductors. . Bristol: Institute of Physics - IOP. . Acesso em: 07 out. 2024. , 2015 -
APA
Journal of Semiconductors. (2015). Journal of Semiconductors. Bristol: Institute of Physics - IOP. -
NLM
Journal of Semiconductors. 2015 ;[citado 2024 out. 07 ] -
Vancouver
Journal of Semiconductors. 2015 ;[citado 2024 out. 07 ] - From structure to surface tension of small silicon clusters by quantum Monte Carlo simulations
- Metastable electron pairs for boson-fermion model of unconventional superconductivity
- Correlation effects on aromaticity of 'Be POT.2- IND.3' cluster: a quantum Monte Carlo study
- Spin-dependent electron scattering and transport through charged quantum dots in a quasi-one-dimensional semiconductor nanostructure
- The ionization potential and electron detachment energy of small aluminum clusters
- Quantum Monte Carlo study of the electron binding energies and aromaticity of small neutral and charged boron clusters
- Electron pairing in crystal: from metastable electron pair to bipolaron
- Effective conductivity of two-dimensional heterostructures with non-screened potential
- Effective conductivity of two-dimensional electrons in heterostructures with nonuniform doping
- Coulomb scattering lifetimes of electrons in coupled quantum wires
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