Quantum Hall Effect in n-p-n and n-2D Topological Insulator-n Junctions (2013)
- Authors:
- Autor USP: GUSEV, GENNADY - IF
- Unidade: IF
- DOI: 10.1103/PhysRevLett.110.076805
- Assunto: POÇOS QUÂNTICOS
- Language: Inglês
- Imprenta:
- Publisher place: College Park
- Date published: 2013
- Source:
- Título do periódico: PHYSICAL REVIEW LETTERS
- Volume/Número/Paginação/Ano: v.110, n. 7, p. 076805, fev.2013
- Este periódico é de assinatura
- Este artigo é de acesso aberto
- URL de acesso aberto
- Cor do Acesso Aberto: green
-
ABNT
GUSEV, Guennadii Michailovich et al. Quantum Hall Effect in n-p-n and n-2D Topological Insulator-n Junctions. PHYSICAL REVIEW LETTERS, v. fe2013, n. 7, p. 076805, 2013Tradução . . Disponível em: https://doi.org/10.1103/PhysRevLett.110.076805. Acesso em: 23 abr. 2024. -
APA
Gusev, G. M., Levin, A. D., Mikhailov, N. N., Dvoretsky, S. A., & Kvon, Z. D. (2013). Quantum Hall Effect in n-p-n and n-2D Topological Insulator-n Junctions. PHYSICAL REVIEW LETTERS, fe2013( 7), 076805. doi:10.1103/PhysRevLett.110.076805 -
NLM
Gusev GM, Levin AD, Mikhailov NN, Dvoretsky SA, Kvon ZD. Quantum Hall Effect in n-p-n and n-2D Topological Insulator-n Junctions [Internet]. PHYSICAL REVIEW LETTERS. 2013 ; fe2013( 7): 076805.[citado 2024 abr. 23 ] Available from: https://doi.org/10.1103/PhysRevLett.110.076805 -
Vancouver
Gusev GM, Levin AD, Mikhailov NN, Dvoretsky SA, Kvon ZD. Quantum Hall Effect in n-p-n and n-2D Topological Insulator-n Junctions [Internet]. PHYSICAL REVIEW LETTERS. 2013 ; fe2013( 7): 076805.[citado 2024 abr. 23 ] Available from: https://doi.org/10.1103/PhysRevLett.110.076805 - Large positive quasi-classical magnetoresistance in high mobility 2D electron gas: interplay of short- and long-range disorder
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Informações sobre o DOI: 10.1103/PhysRevLett.110.076805 (Fonte: oaDOI API)
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