Bilayer graphene on h-BN substrate: investigating the breakdown voltage and tuning the bandgap by electric field (2012)
- Authors:
- USP affiliated author: FAZZIO, ADALBERTO - IF
- School: IF
- DOI: 10.1088/0953-8984/24/7/075301
- Subjects: ELETRICIDADE E ELETRÔNICA; SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Journal of Physics: Condensed Matter
- Volume/Número/Paginação/Ano: v.24, n.7, p. 075301, fev.2012
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
PADILHA, José Eduardo; PONTES, Renato Borges; FAZZIO, Adalberto. Bilayer graphene on h-BN substrate: investigating the breakdown voltage and tuning the bandgap by electric field. Journal of Physics: Condensed Matter, London, v. fe2012, n. 7, p. 075301, 2012. DOI: 10.1088/0953-8984/24/7/075301. -
APA
Padilha, J. E., Pontes, R. B., & Fazzio, A. (2012). Bilayer graphene on h-BN substrate: investigating the breakdown voltage and tuning the bandgap by electric field. Journal of Physics: Condensed Matter, fe2012( 7), 075301. doi:10.1088/0953-8984/24/7/075301 -
NLM
Padilha JE, Pontes RB, Fazzio A. Bilayer graphene on h-BN substrate: investigating the breakdown voltage and tuning the bandgap by electric field. Journal of Physics: Condensed Matter. 2012 ; fe2012( 7): 075301. -
Vancouver
Padilha JE, Pontes RB, Fazzio A. Bilayer graphene on h-BN substrate: investigating the breakdown voltage and tuning the bandgap by electric field. Journal of Physics: Condensed Matter. 2012 ; fe2012( 7): 075301. - Theoretical study of natives defects in BN-nanotubes
- Vacancies in amorphous silicon: a first principles study
- Ab initio studyof '90 IND.0' partial dislocation in silicon
- Metal-semiconducting behavior of carbon nanotubes adsorbed on hidrogeneted Si(100) surfaces
- Theoretical study of "NH IND.3" sensors based on "CN IND.x" nanotubes
- Surpresas na física do estado solído
- Spin-texture and magnetic anisotropy of 'CO' adsorbed 'BI'IND. 2''SE' IND. 3' topological insulator surfaces
- Carrier-mediated magnetism in transition metal doped 'BI' IND. 2''SE' IND. 3' topological insulator
- Topological phases in 2D-graphene-likes materials
- Tuning low-spin to high-spin 'MN' pairs in 2-D 'ZN''O' by injecting holes
Informações sobre o DOI: 10.1088/0953-8984/24/7/075301 (Fonte: oaDOI API)
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