Comparing the valence control of 'PR' and 'TB' in zirconia by co-doping effect (2012)
- Authors:
- USP affiliated authors: BRITO, HERMI FELINTO DE - IQ ; NUNES, LUIZ ANTONIO DE OLIVEIRA - IFSC
- Unidades: IQ; IFSC
- Subjects: ZIRCÔNIO; LANTANÍDIOS; TERRAS RARAS; LUMINESCÊNCIA
- Language: Inglês
- Imprenta:
- Publisher: Agencija Format
- Publisher place: Belgrade
- Date published: 2012
- ISBN: 978867061160
- Source:
- Título do periódico: Book of Abstracts
- Conference titles: International Conference on the Physics of Optical Materials and Devices - ICOM
-
ABNT
CARVALHO, J. M. et al. Comparing the valence control of 'PR' and 'TB' in zirconia by co-doping effect. 2012, Anais.. Belgrade: Agencija Format, 2012. . Acesso em: 19 abr. 2024. -
APA
Carvalho, J. M., Brito, H. F. de, Rodrigues, L. C. V., Nunes, L. A. de O., Lastusaari, M., Laamanen, T., & Hölsä, J. (2012). Comparing the valence control of 'PR' and 'TB' in zirconia by co-doping effect. In Book of Abstracts. Belgrade: Agencija Format. -
NLM
Carvalho JM, Brito HF de, Rodrigues LCV, Nunes LA de O, Lastusaari M, Laamanen T, Hölsä J. Comparing the valence control of 'PR' and 'TB' in zirconia by co-doping effect. Book of Abstracts. 2012 ;[citado 2024 abr. 19 ] -
Vancouver
Carvalho JM, Brito HF de, Rodrigues LCV, Nunes LA de O, Lastusaari M, Laamanen T, Hölsä J. Comparing the valence control of 'PR' and 'TB' in zirconia by co-doping effect. Book of Abstracts. 2012 ;[citado 2024 abr. 19 ] - Luminescence persistent from 'Pr POT.3+'-doped silicate phosphor
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- Photoluminescence properties of different ZrO2 polymorphs obtained by sol-gel method
- Highly-sensitive Eu3+ ratiometric thermometers based on excited state absorption with predictable calibration
- Influência da temperatura na persistência luminescente verde do fósforo 'CD''SI''O IND. 3' dopado com íons 'TB POT. 3+'
- Temperature dependent ligand to metal energy transfer rates in lanthanide complexes: theoretical modeling and the first direct experimental observation
- Red light emitting persistent luminescence in 'Pr POT.3+'-doped silicate
- Low temperature synthesis of 'Y IND.2''O IND.3':'Eu IND.3+' nanophosphor using tricarboxylate precursor
- Defects and charge compensation in CdSiO3: a DFT and synchrotron study
- Effect of defect clusters on the persistent luminescence of 'CD''SI''O IND. 3':'PR POT. 3+'
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