Ab initio energy gap calculation of 'GA'N nanowires (2011)
- Authors:
- Autor USP: FERREIRA, LUIZ GUIMARAES - IF
- Unidade: IF
- Assunto: ELETRÔNICA
- Language: Inglês
- Imprenta:
- Publisher: SBF
- Publisher place: Foz do Iguaçu
- Date published: 2011
- Source:
- Título do periódico: Resumo
- Conference titles: Econtro de Física
-
ABNT
OLIVEIRA, Pedro H G; FERREIRA, Luiz G; TELES, Lara K; MARQUES, Marcelo. Ab initio energy gap calculation of 'GA'N nanowires. Anais.. Foz do Iguaçu: SBF, 2011. -
APA
Oliveira, P. H. G., Ferreira, L. G., Teles, L. K., & Marques, M. (2011). Ab initio energy gap calculation of 'GA'N nanowires. In Resumo. Foz do Iguaçu: SBF. -
NLM
Oliveira PHG, Ferreira LG, Teles LK, Marques M. Ab initio energy gap calculation of 'GA'N nanowires. Resumo. 2011 ; -
Vancouver
Oliveira PHG, Ferreira LG, Teles LK, Marques M. Ab initio energy gap calculation of 'GA'N nanowires. Resumo. 2011 ; - First-principles calculations of the phase diagrams of noble metals: 'CU'-'AU', 'CU'-'AG', and 'AG'-'AU'
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- Ordering of isovalent intersemiconductor alloys
- First principles phase diagrams calculation of ii-vi semiconductor alloys
- Some surprising results of the kohn-sham density functional
- Combined LDA and LDA-1/2 method to obtain defect formation energies in large silicon supercells
- Mecânica estatística de compostos intermetálicos
- Accurate electronic band gap and electron e®ective masses of AlGaN and InGaN from LDA-1/2 calculations
- Accurate prediction of the `Si/SiO IND.2´ interface band offset using the self-consistent ab initio DFT/LDA-1/2 method
- Application of the variational cellular method to semiconductors: the 'ZNS' case
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