Bilayer graphene in nanoelectronics: ab initio Investigations (2011)
- Authors:
- USP affiliated authors: FAZZIO, ADALBERTO - IF ; SILVA, ANTONIO JOSE ROQUE DA - IF
- Unidade: IF
- Assunto: ELETRÔNICA
- Language: Inglês
- Imprenta:
- Publisher: SBF
- Publisher place: Foz do Iguaçu
- Date published: 2011
- Source:
- Título do periódico: Resumo
- Conference titles: Econtro de Física
-
ABNT
FAZZIO, Adalberto et al. Bilayer graphene in nanoelectronics: ab initio Investigations. 2011, Anais.. Foz do Iguaçu: SBF, 2011. Disponível em: http://www.sbf1.sbfisica.org.br/eventos/enf/2011/sys/resumos/R3062-1.pdf. Acesso em: 24 abr. 2024. -
APA
Fazzio, A., Lima, M. P., Pontes, R. B., Padilha, J. E., & Silva, A. J. R. da. (2011). Bilayer graphene in nanoelectronics: ab initio Investigations. In Resumo. Foz do Iguaçu: SBF. Recuperado de http://www.sbf1.sbfisica.org.br/eventos/enf/2011/sys/resumos/R3062-1.pdf -
NLM
Fazzio A, Lima MP, Pontes RB, Padilha JE, Silva AJR da. Bilayer graphene in nanoelectronics: ab initio Investigations [Internet]. Resumo. 2011 ;[citado 2024 abr. 24 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/enf/2011/sys/resumos/R3062-1.pdf -
Vancouver
Fazzio A, Lima MP, Pontes RB, Padilha JE, Silva AJR da. Bilayer graphene in nanoelectronics: ab initio Investigations [Internet]. Resumo. 2011 ;[citado 2024 abr. 24 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/enf/2011/sys/resumos/R3062-1.pdf - Vacancy-mediated diffusion in disordered alloys: Ge self-diffusion in 'Si IND.1-X' 'Ge IND.X'
- Influence of surface degrees of freedom on the adsorption of Ge ad-atoms on Si(100)
- Eletronic and structural properties of 'C IND. 59'Si on a hydrogenated Si(100) surface
- A possible route to grow a (Mn:'Si IND. (1-x)'Ge IND. x')-based diluted magnetic semiconductor
- Adsoption of gold on carbon nanotubes
- Computer simulations of gold nanowires
- Ab initio study of an iron atom interacting with single-wall carbon nanotubes
- Electronic and magnetic properties of iron chains on carbon nanotubes
- Adsorption and incorporation of Mn on Si(100)
- Effect of impurities in the breaking of gold nanowires
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