Disorder-based graphene spintronics (2010)
- Authors:
- USP affiliated authors: FAZZIO, ADALBERTO - IF ; SILVA, ANTONIO JOSE ROQUE DA - IF
- Unidade: IF
- DOI: 10.1088/0957-4484/21/34/345202
- Subjects: NANOTECNOLOGIA; SPIN
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Nanotechnology
- ISSN: 0957-4484
- Volume/Número/Paginação/Ano: v. 21, n. 34, p. 345202/1-345202/7, 2010
- Este periódico é de assinatura
- Este artigo é de acesso aberto
- URL de acesso aberto
- Cor do Acesso Aberto: green
-
ABNT
ROCHA, Alexandre R et al. Disorder-based graphene spintronics. Nanotechnology, v. 21, n. 34, p. 345202/1-345202/7, 2010Tradução . . Disponível em: https://doi.org/10.1088/0957-4484/21/34/345202. Acesso em: 19 abr. 2024. -
APA
Rocha, A. R., Martins, T. B., Fazzio, A., & Silva, A. J. R. da. (2010). Disorder-based graphene spintronics. Nanotechnology, 21( 34), 345202/1-345202/7. doi:10.1088/0957-4484/21/34/345202 -
NLM
Rocha AR, Martins TB, Fazzio A, Silva AJR da. Disorder-based graphene spintronics [Internet]. Nanotechnology. 2010 ; 21( 34): 345202/1-345202/7.[citado 2024 abr. 19 ] Available from: https://doi.org/10.1088/0957-4484/21/34/345202 -
Vancouver
Rocha AR, Martins TB, Fazzio A, Silva AJR da. Disorder-based graphene spintronics [Internet]. Nanotechnology. 2010 ; 21( 34): 345202/1-345202/7.[citado 2024 abr. 19 ] Available from: https://doi.org/10.1088/0957-4484/21/34/345202 - Vacancy-mediated diffusion in disordered alloys: Ge self-diffusion in 'Si IND.1-X' 'Ge IND.X'
- Influence of surface degrees of freedom on the adsorption of Ge ad-atoms on Si(100)
- Eletronic and structural properties of 'C IND. 59'Si on a hydrogenated Si(100) surface
- A possible route to grow a (Mn:'Si IND. (1-x)'Ge IND. x')-based diluted magnetic semiconductor
- Adsoption of gold on carbon nanotubes
- Computer simulations of gold nanowires
- Ab initio study of an iron atom interacting with single-wall carbon nanotubes
- Electronic and magnetic properties of iron chains on carbon nanotubes
- Adsorption and incorporation of Mn on Si(100)
- Effect of impurities in the breaking of gold nanowires
Informações sobre o DOI: 10.1088/0957-4484/21/34/345202 (Fonte: oaDOI API)
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