Excitonic effects in II-VI semiconductor heterostructures (1994)
- Autor:
- Autor USP: CHITTA, VALMIR ANTONIO - IFQSC
- Unidade: IFQSC
- Subjects: SEMICONDUTORES; ELETRÔNICA (PROPRIEDADES); ÓPTICA
- Language: Inglês
- Imprenta:
- Source:
- Título: Brazilian Journal of Physics
- ISSN: 0103-9733
- Volume/Número/Paginação/Ano: v. 24, n. 1, p. 133-144, Mar. 1994
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ABNT
CHITTA, Valmir Antonio. Excitonic effects in II-VI semiconductor heterostructures. Brazilian Journal of Physics, v. 24, n. 1, p. 133-144, 1994Tradução . . Acesso em: 23 jan. 2026. -
APA
Chitta, V. A. (1994). Excitonic effects in II-VI semiconductor heterostructures. Brazilian Journal of Physics, 24( 1), 133-144. -
NLM
Chitta VA. Excitonic effects in II-VI semiconductor heterostructures. Brazilian Journal of Physics. 1994 ; 24( 1): 133-144.[citado 2026 jan. 23 ] -
Vancouver
Chitta VA. Excitonic effects in II-VI semiconductor heterostructures. Brazilian Journal of Physics. 1994 ; 24( 1): 133-144.[citado 2026 jan. 23 ] - Photoconductivity kinetics in p-type 'PB''TE':'BA'F IND. 2'
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- Propriedades eletrônicas de hetero-estruturas de semicondutores zincblende
- Low temperature transport properties of p-type Pb1-x EuxTe films in the insulator regime
- Structural and magnetic characterization of c-GaN implanted with Fe, Mn and Cu ions
- Linear magnetoresistance on p-type PbTe samples
- Structural and magnetic characterization of c-'GA''N'/3 'C'-'SI''C'
- Defect induced room temperature ferromagnetism in co-doped 'ZNO' bulk samples
- Evidence of defect-mediated magnetic coupling on hydrogenated 'CO'-doped 'ZN''O'
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