Non-ballistic spin field-effect transistor, anisotropic charge conductivity, and spin-Hall effect (2004)
- Authors:
- Autor USP: MENEZES, JOSE CARLOS EGUES DE - IFSC
- Unidade: IFSC
- Subjects: SEMICONDUTORES; FERROMAGNETISMO
- Language: Inglês
- Imprenta:
- Publisher place: Santa Barbara
- Date published: 2004
- Source:
- Título do periódico: Abstracts Book
- Conference titles: International Conference on Physics and Applications of Spin-Related Phenomena in Semiconductors - PASPS III
-
ABNT
SCHLIEMANN, John e EGUES, José Carlos e LOSS, D. Non-ballistic spin field-effect transistor, anisotropic charge conductivity, and spin-Hall effect. 2004, Anais.. Santa Barbara: Instituto de Física de São Carlos, Universidade de São Paulo, 2004. . Acesso em: 26 set. 2024. -
APA
Schliemann, J., Egues, J. C., & Loss, D. (2004). Non-ballistic spin field-effect transistor, anisotropic charge conductivity, and spin-Hall effect. In Abstracts Book. Santa Barbara: Instituto de Física de São Carlos, Universidade de São Paulo. -
NLM
Schliemann J, Egues JC, Loss D. Non-ballistic spin field-effect transistor, anisotropic charge conductivity, and spin-Hall effect. Abstracts Book. 2004 ;[citado 2024 set. 26 ] -
Vancouver
Schliemann J, Egues JC, Loss D. Non-ballistic spin field-effect transistor, anisotropic charge conductivity, and spin-Hall effect. Abstracts Book. 2004 ;[citado 2024 set. 26 ] - Electronic structure of II-VI Mn-Based digital magnetic heterostructures
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- Novel spin FETS
- Hysteretic resistance spikes near Landau-level crossings in magnetically-doped quantum wells: a spin-DFT study
- Zitterbewegung and bulk-edge Landau-Zener tunneling in 2D topological insulators
- Blurring the boundaries between topological and non-topological phenomena in dots
- Spintronics based on percolated topological edge states
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