Electronic structure and origin of ferromagnetism in 'Ga IND. 1-x''Mn IND. x'As semiconductors (2003)
- Authors:
- USP affiliated authors: SILVA, ANTONIO JOSE ROQUE DA - IF ; FAZZIO, ADALBERTO - IF
- School: IF
- Subjects: MATÉRIA CONDENSADA; ESTRUTURA ELETRÔNICA; SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Source:
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ABNT
SILVA, Antonio Jose Roque da; FAZZIO, Adalberto; SANTOS, Raimundo R dos; OLIVEIRA, Luiz E. Electronic structure and origin of ferromagnetism in 'Ga IND. 1-x''Mn IND. x'As semiconductors. Physica B, Amsterdam, 2003. Disponível em: < http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6TVH-4B28YBV-B-J&_cdi=5535&_orig=browse&_coverDate=12%2F31%2F2003&_sk=996599999&view=c&wchp=dGLbVtb-zSkzk&_acct=C000049650&_version=1&_userid=972067&md5=8724caceca1cfb55390 >. -
APA
Silva, A. J. R. da, Fazzio, A., Santos, R. R. dos, & Oliveira, L. E. (2003). Electronic structure and origin of ferromagnetism in 'Ga IND. 1-x''Mn IND. x'As semiconductors. Physica B. Recuperado de http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6TVH-4B28YBV-B-J&_cdi=5535&_orig=browse&_coverDate=12%2F31%2F2003&_sk=996599999&view=c&wchp=dGLbVtb-zSkzk&_acct=C000049650&_version=1&_userid=972067&md5=8724caceca1cfb55390 -
NLM
Silva AJR da, Fazzio A, Santos RR dos, Oliveira LE. Electronic structure and origin of ferromagnetism in 'Ga IND. 1-x''Mn IND. x'As semiconductors [Internet]. Physica B. 2003 ;Available from: http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6TVH-4B28YBV-B-J&_cdi=5535&_orig=browse&_coverDate=12%2F31%2F2003&_sk=996599999&view=c&wchp=dGLbVtb-zSkzk&_acct=C000049650&_version=1&_userid=972067&md5=8724caceca1cfb55390 -
Vancouver
Silva AJR da, Fazzio A, Santos RR dos, Oliveira LE. Electronic structure and origin of ferromagnetism in 'Ga IND. 1-x''Mn IND. x'As semiconductors [Internet]. Physica B. 2003 ;Available from: http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6TVH-4B28YBV-B-J&_cdi=5535&_orig=browse&_coverDate=12%2F31%2F2003&_sk=996599999&view=c&wchp=dGLbVtb-zSkzk&_acct=C000049650&_version=1&_userid=972067&md5=8724caceca1cfb55390 - Vacancies in amorphous silicon: a first principles study
- First-principles study of Mn interstitial and nature of hole-mediated ferromagnetism in 'Ga IND.1-X' 'Mn IND.X' As
- Fe and Mn atoms interacting with carbon nanotubes
- Effect of impurities in gold nanowires
- Ab inition calculations of Mn-Mn interactions in 'Ga IND. 1-x''Mn IND. x'As semiconductors
- A possible route to grow substitutional TM in 'Si IND. (1-x)''Ge IND. x' alloys
- Comparative study of defect energetics in 'HfO IND. 2' and 'SiO IND. 2'
- Disorder and the effective Mn-Mn exchange interaction in Ga
- Adsorption and conductance of BDT on the Au(111) surface
- Defects, mechanical properties, and charge transport in carbon nanotubes
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