First principles of diluted magnetic 'Ga IND. 1-x''Mn IND. x'N and 'Al IND. 1-x''Mn IND. x'N alloys (2003)
- Authors:
- USP affiliated authors: LEITE, JOSE ROBERTO - IF ; SCOLFARO, LUISA MARIA RIBEIRO - IF
- Unidade: IF
- Assunto: SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Resumos
- Conference titles: Encontro Nacional de Física da Matéria Condensada 26
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ABNT
PAIVA, R de; NOGUEIRA, R A; ALVES, J L A; LEITE, J. R.; SCOLFARO, Luisa Maria Ribeiro. First principles of diluted magnetic 'Ga IND. 1-x''Mn IND. x'N and 'Al IND. 1-x''Mn IND. x'N alloys. Anais.. São Paulo: SBF, 2003. -
APA
Paiva, R. de, Nogueira, R. A., Alves, J. L. A., Leite, J. R., & Scolfaro, L. M. R. (2003). First principles of diluted magnetic 'Ga IND. 1-x''Mn IND. x'N and 'Al IND. 1-x''Mn IND. x'N alloys. In Resumos. São Paulo: SBF. -
NLM
Paiva R de, Nogueira RA, Alves JLA, Leite JR, Scolfaro LMR. First principles of diluted magnetic 'Ga IND. 1-x''Mn IND. x'N and 'Al IND. 1-x''Mn IND. x'N alloys. Resumos. 2003 ; -
Vancouver
Paiva R de, Nogueira RA, Alves JLA, Leite JR, Scolfaro LMR. First principles of diluted magnetic 'Ga IND. 1-x''Mn IND. x'N and 'Al IND. 1-x''Mn IND. x'N alloys. Resumos. 2003 ; - Density Functional theory for Holes in Semiconductors
- Minibands of p-type 'delta'-doping superlattices in GaAs
- Miniband structures and effective masses of n-type 'delta'-doping superlattices in 'GaN'
- Impurity levels of substitutional chalcogens-doped ge
- Electronic properties of 'SI' 'DELTA'-doped 'GA''AS' quantum wells
- Theory of hole confinement in delta-doping structures
- Estrutura eletronica de multiplas camadas e super-redes 'GAMA'. Doping em 'SI'
- Photoreflectance investigations of semiconductor device structutres
- Hole band structure of silicon-based p-type'DELTA'-doping quantum wells
- Propriedades oticas de pocos quanticos 'IN'ga''as' / 'ga''as' E 'ga'AI'as' / 'ga''as' crescidos por epitaxia de feixe molecular
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