Energetic and structural properties of N incorporation in Si'O IND. 2' (2003)
- Authors:
- USP affiliated authors: SILVA, ANTONIO JOSE ROQUE DA - IF ; FAZZIO, ADALBERTO - IF
- Unidade: IF
- Assunto: SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Resumos
- Conference titles: Encontro Nacional de Física da Matéria Condensada 26
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ABNT
ORELLANA, W e SILVA, Antonio Jose Roque da e FAZZIO, Adalberto. Energetic and structural properties of N incorporation in Si'O IND. 2'. 2003, Anais.. São Paulo: SBF, 2003. . Acesso em: 19 abr. 2024. -
APA
Orellana, W., Silva, A. J. R. da, & Fazzio, A. (2003). Energetic and structural properties of N incorporation in Si'O IND. 2'. In Resumos. São Paulo: SBF. -
NLM
Orellana W, Silva AJR da, Fazzio A. Energetic and structural properties of N incorporation in Si'O IND. 2'. Resumos. 2003 ;[citado 2024 abr. 19 ] -
Vancouver
Orellana W, Silva AJR da, Fazzio A. Energetic and structural properties of N incorporation in Si'O IND. 2'. Resumos. 2003 ;[citado 2024 abr. 19 ] - Vacancy-mediated diffusion in disordered alloys: Ge self-diffusion in 'Si IND.1-X' 'Ge IND.X'
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- Eletronic and structural properties of 'C IND. 59'Si on a hydrogenated Si(100) surface
- A possible route to grow a (Mn:'Si IND. (1-x)'Ge IND. x')-based diluted magnetic semiconductor
- Adsoption of gold on carbon nanotubes
- Computer simulations of gold nanowires
- Ab initio study of an iron atom interacting with single-wall carbon nanotubes
- Electronic and magnetic properties of iron chains on carbon nanotubes
- Adsorption and incorporation of Mn on Si(100)
- Effect of impurities in the breaking of gold nanowires
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