Oxifation at the 'Si/SiO IND.2' interface: influence of the spin degree of freedom (2003)
- Authors:
- USP affiliated authors: SILVA, ANTONIO JOSE ROQUE DA - IF ; FAZZIO, ADALBERTO - IF
- Unidade: IF
- Subjects: SUPERFÍCIE FÍSICA; OXIDAÇÃO; ESTRUTURA ELETRÔNICA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Physical Review Letters
- ISSN: 0031-9007
- Volume/Número/Paginação/Ano: v. 90, n. 1, p. 016103/1-016103/4, 2003
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ABNT
ORELLANA, W e SILVA, Antonio Jose Roque da e FAZZIO, Adalberto. Oxifation at the 'Si/SiO IND.2' interface: influence of the spin degree of freedom. Physical Review Letters, v. 90, n. 1, p. 016103/1-016103/4, 2003Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRLTAO000090000001016103000001&idtype=cvips. Acesso em: 19 abr. 2024. -
APA
Orellana, W., Silva, A. J. R. da, & Fazzio, A. (2003). Oxifation at the 'Si/SiO IND.2' interface: influence of the spin degree of freedom. Physical Review Letters, 90( 1), 016103/1-016103/4. Recuperado de http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRLTAO000090000001016103000001&idtype=cvips -
NLM
Orellana W, Silva AJR da, Fazzio A. Oxifation at the 'Si/SiO IND.2' interface: influence of the spin degree of freedom [Internet]. Physical Review Letters. 2003 ; 90( 1): 016103/1-016103/4.[citado 2024 abr. 19 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRLTAO000090000001016103000001&idtype=cvips -
Vancouver
Orellana W, Silva AJR da, Fazzio A. Oxifation at the 'Si/SiO IND.2' interface: influence of the spin degree of freedom [Internet]. Physical Review Letters. 2003 ; 90( 1): 016103/1-016103/4.[citado 2024 abr. 19 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRLTAO000090000001016103000001&idtype=cvips - Vacancy-mediated diffusion in disordered alloys: Ge self-diffusion in 'Si IND.1-X' 'Ge IND.X'
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- Eletronic and structural properties of 'C IND. 59'Si on a hydrogenated Si(100) surface
- A possible route to grow a (Mn:'Si IND. (1-x)'Ge IND. x')-based diluted magnetic semiconductor
- Adsoption of gold on carbon nanotubes
- Computer simulations of gold nanowires
- Ab initio study of an iron atom interacting with single-wall carbon nanotubes
- Electronic and magnetic properties of iron chains on carbon nanotubes
- Adsorption and incorporation of Mn on Si(100)
- Effect of impurities in the breaking of gold nanowires
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