Interband transitions in cubic AlGaN/GaN quantum wells (2002)
- Authors:
- USP affiliated authors: SCOLFARO, LUISA MARIA RIBEIRO - IF ; LEITE, JOSE ROBERTO - IF
- Unidade: IF
- Assunto: SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Source:
- Título: Resumos
- Conference titles: Encontro Nacional de Física da Matéria Condensada
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ABNT
SIPAHI, Guilherme Matos et al. Interband transitions in cubic AlGaN/GaN quantum wells. 2002, Anais.. São Paulo: SBF, 2002. . Acesso em: 01 nov. 2025. -
APA
Sipahi, G. M., Rodrigues, S. C. P., Noriega, O. C., Scolfaro, L. M. R., Leite, J. R., Frey, T., & Lischka, K. (2002). Interband transitions in cubic AlGaN/GaN quantum wells. In Resumos. São Paulo: SBF. -
NLM
Sipahi GM, Rodrigues SCP, Noriega OC, Scolfaro LMR, Leite JR, Frey T, Lischka K. Interband transitions in cubic AlGaN/GaN quantum wells. Resumos. 2002 ;[citado 2025 nov. 01 ] -
Vancouver
Sipahi GM, Rodrigues SCP, Noriega OC, Scolfaro LMR, Leite JR, Frey T, Lischka K. Interband transitions in cubic AlGaN/GaN quantum wells. Resumos. 2002 ;[citado 2025 nov. 01 ] - Electronic properties of 'SI' 'DELTA'-doped 'GA''AS' quantum wells
- Estrutura eletronica de multiplas camadas e super-redes 'GAMA'. Doping em 'SI'
- Photoreflectance investigations of semiconductor device structutres
- Miniband structures and effective masses of n-type 'delta'-doping superlattices in 'GaN'
- Phase separation, gap bowing, and structural properties of cubic 'In IND.X' 'Al IND.1-X'N
- AB initio calculation of the (100) and surface phonon dispersion of GaAs and GaN
- Group-IV and group-V substituional impurities in cubic group-III nitrides
- First-principles calculations of the thermodynamic and structural properties of strained 'In IND.X''Ga IND.1-X'N and 'Al IND.X''Ga IND.1-X' N alloys
- Structural, electronic, and effective-mass properties of silicon and zinc-blende group-III nitride semiconductor compounds
- Light emission process in GaN/InGaN/GaN quantum wells
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