Spin effects on the oxidation process in 'SiO IND.2' (2002)
- Authors:
- USP affiliated authors: SILVA, ANTONIO JOSE ROQUE DA - IF ; FAZZIO, ADALBERTO - IF
- Unidade: IF
- Assunto: SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Resumos
- Conference titles: Encontro Nacional de Física da Matéria Condensada
-
ABNT
ORELLANA, Walter M e SILVA, Antonio Jose Roque da e FAZZIO, Adalberto. Spin effects on the oxidation process in 'SiO IND.2'. 2002, Anais.. São Paulo: SBF, 2002. . Acesso em: 19 set. 2024. -
APA
Orellana, W. M., Silva, A. J. R. da, & Fazzio, A. (2002). Spin effects on the oxidation process in 'SiO IND.2'. In Resumos. São Paulo: SBF. -
NLM
Orellana WM, Silva AJR da, Fazzio A. Spin effects on the oxidation process in 'SiO IND.2'. Resumos. 2002 ;[citado 2024 set. 19 ] -
Vancouver
Orellana WM, Silva AJR da, Fazzio A. Spin effects on the oxidation process in 'SiO IND.2'. Resumos. 2002 ;[citado 2024 set. 19 ] - Electronic and structural properties of "C IND.59" Si on the monohydride Si(100) surface
- First principles study of the ferromagnetism in "Ga IND.1-x" "Mn IND.x" As semiconductors
- Adsorption of "C IND.59" Si on Si(100) monohydride surface
- Influence of two vacancies in bubdles and isolated carbon naotubes
- {\it Ab initio} molecular dynamics study of pure and contaminated gold nanowires
- Comparative study of defect energetics in Hf'O IND.2' and Si'O IND. 2'
- Effect of impurities on the breaking of Au nanowires
- Adsorption and incorporation of Mn on Si(100)
- Microscopic picture of the single vacancy in germanium
- Adsorption of monomers on semiconductors and the importance of surface degrees of freedom
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