In-situ and ex-situ investigation of In segregation in InGaAs layers grown by molecular beam epitaxy on GaAs (2002)
- Authors:
- Autor USP: QUIVY, ALAIN ANDRE - IF
- Unidade: IF
- Assunto: SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Resumos
- Conference titles: Encontro Nacional de Física da Matéria Condensada
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ABNT
MARTINI, S.; QUIVY, A. A.; ABRAMOF, Eduardo. In-situ and ex-situ investigation of In segregation in InGaAs layers grown by molecular beam epitaxy on GaAs. Anais.. São Paulo: SBF, 2002. -
APA
Martini, S., Quivy, A. A., & Abramof, E. (2002). In-situ and ex-situ investigation of In segregation in InGaAs layers grown by molecular beam epitaxy on GaAs. In Resumos. São Paulo: SBF. -
NLM
Martini S, Quivy AA, Abramof E. In-situ and ex-situ investigation of In segregation in InGaAs layers grown by molecular beam epitaxy on GaAs. Resumos. 2002 ; -
Vancouver
Martini S, Quivy AA, Abramof E. In-situ and ex-situ investigation of In segregation in InGaAs layers grown by molecular beam epitaxy on GaAs. Resumos. 2002 ; - Microscopio de tunelamento a ser usado no ar, no vacuo e no helio liquido
- Optical and transport properties of InAs/GaAs quantum dots emitting at 1.3
- Difusão de portadores em poços quânticos assimétricos
- Transferência de energia entre pontos quânticos de InAs/GaAs assistida por ASE
- Fabricação e caracterização de células solares de terceira geração baseadas em nanoestruturas obtidas pela técnica de epitaxia por feixes moleculares
- Infrared photodetectors based on submonolayer quantum dots
- Theoretical and experimental study of the excitonic binding energy in 'GA''AS'/'AL''GA''AS' single and coupled double quantum wells
- High-detectivity infrared photodetector based onInAs submonolayer quantum dots grown onGaAs(001) with a 2 × 4 surface reconstruction
- Effect of electric field non-uniformity on the differences between I-V characteristics of QWIP devices fabricated on the same wafer
- Step bunching in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on GaAs(001) vicinal surfaces
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