Effects of oxygen partial pressure and annealing temeprature on the formation of sputtered tungsten oxide films (2002)
- Authors:
- Autor USP: SILVA, MARCELO DE ASSUMPCAO PEREIRA DA - IFSC
- Unidade: IFSC
- Assunto: FILMES FINOS
- Language: Inglês
- Imprenta:
- Publisher place: Pennington
- Date published: 2002
- Source:
- Título: Journal of the Electrochemical Society
- ISSN: 0013-4651
- Volume/Número/Paginação/Ano: v. 149, n. 3, p. H81-H86, Mar. 2002
-
ABNT
BITTENCOURT, C et al. Effects of oxygen partial pressure and annealing temeprature on the formation of sputtered tungsten oxide films. Journal of the Electrochemical Society, v. 149, n. 3, p. H81-H86, 2002Tradução . . Acesso em: 10 jan. 2026. -
APA
Bittencourt, C., Landers, R., Llobet, E., Molas, G., Correig, X., Silva, M. de A. P. da, et al. (2002). Effects of oxygen partial pressure and annealing temeprature on the formation of sputtered tungsten oxide films. Journal of the Electrochemical Society, 149( 3), H81-H86. -
NLM
Bittencourt C, Landers R, Llobet E, Molas G, Correig X, Silva M de AP da, Sueiras JE, Calderer J. Effects of oxygen partial pressure and annealing temeprature on the formation of sputtered tungsten oxide films. Journal of the Electrochemical Society. 2002 ; 149( 3): H81-H86.[citado 2026 jan. 10 ] -
Vancouver
Bittencourt C, Landers R, Llobet E, Molas G, Correig X, Silva M de AP da, Sueiras JE, Calderer J. Effects of oxygen partial pressure and annealing temeprature on the formation of sputtered tungsten oxide films. Journal of the Electrochemical Society. 2002 ; 149( 3): H81-H86.[citado 2026 jan. 10 ] - Early stages of enamel erosion analysis
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