Raman spectroscopy characterization of InAs self-assembled quantum dots (2002)
- Authors:
- Autor USP: POUSSEP, IOURI - IFSC
- Unidade: IFSC
- DOI: 10.1016/s0921-4526(02)00542-2
- Assunto: ESPECTROSCOPIA RAMAN
- Language: Inglês
- Imprenta:
- Source:
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
GALZERANI, J C e PUSEP, Yuri A. Raman spectroscopy characterization of InAs self-assembled quantum dots. Physica B, v. 316-317, p. 455-458, 2002Tradução . . Disponível em: https://doi.org/10.1016/s0921-4526(02)00542-2. Acesso em: 23 abr. 2024. -
APA
Galzerani, J. C., & Pusep, Y. A. (2002). Raman spectroscopy characterization of InAs self-assembled quantum dots. Physica B, 316-317, 455-458. doi:10.1016/s0921-4526(02)00542-2 -
NLM
Galzerani JC, Pusep YA. Raman spectroscopy characterization of InAs self-assembled quantum dots [Internet]. Physica B. 2002 ; 316-317 455-458.[citado 2024 abr. 23 ] Available from: https://doi.org/10.1016/s0921-4526(02)00542-2 -
Vancouver
Galzerani JC, Pusep YA. Raman spectroscopy characterization of InAs self-assembled quantum dots [Internet]. Physica B. 2002 ; 316-317 455-458.[citado 2024 abr. 23 ] Available from: https://doi.org/10.1016/s0921-4526(02)00542-2 - Transition from localized to extended states below the Fermi level in GaAs/AlGaAs multiple quantum well heterostructures
- Manipulation of emission energy in GaAs/AlGaAs core-shell nanowires with radial heterostructure
- Plasmon- like oscillations of the electrons localized by the DX centers in doped 'Al IND.X''Ga IND.1-X'As
- Quantum interference and localization in disordered GaAs/AlGaAs superlattices
- Coherency of elementary excitations in disordered electron system
- Miniband effects in short-period InGaAs/InP superlattices
- Coherence of elementary excitations in disordered electron systems
- Conduction mechanisms in GaAs nanowire photovoltaics
- Optical probe of quantum hall state in disordered superlattices embedded in a wide parabolic well
- Circularly polarized photoluminescence of GaAs/AlGaAs quantum hall bilayers
Informações sobre o DOI: 10.1016/s0921-4526(02)00542-2 (Fonte: oaDOI API)
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