Microscopic mechanisms behind the Al-induced crystallization of a-Ge:H films (2002)
- Authors:
- Autor USP: ZANATTA, ANTONIO RICARDO - IFSC
- Unidade: IFSC
- Assunto: FÍSICA DA MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Publisher: Elsevier Science
- Publisher place: Amsterdam
- Date published: 2002
- Source:
- Título do periódico: Journal of Non-Crystalline Solids
- ISSN: 0022-3093
- Volume/Número/Paginação/Ano: v.299-302, p.143-147, Apr. 2002
- Conference titles: International Conference on Amorphous and Microcrystalline Semiconductors - Science and Technology
-
ABNT
CHAMBOULEYRON, I.; FAJARDO, F.; ZANATTA, Antonio Ricardo. Microscopic mechanisms behind the Al-induced crystallization of a-Ge:H films. Journal of Non-Crystalline Solids[S.l: s.n.], 2002. -
APA
Chambouleyron, I., Fajardo, F., & Zanatta, A. R. (2002). Microscopic mechanisms behind the Al-induced crystallization of a-Ge:H films. Journal of Non-Crystalline Solids. Amsterdam: Elsevier Science. -
NLM
Chambouleyron I, Fajardo F, Zanatta AR. Microscopic mechanisms behind the Al-induced crystallization of a-Ge:H films. Journal of Non-Crystalline Solids. 2002 ;299-302 143-147. -
Vancouver
Chambouleyron I, Fajardo F, Zanatta AR. Microscopic mechanisms behind the Al-induced crystallization of a-Ge:H films. Journal of Non-Crystalline Solids. 2002 ;299-302 143-147. - Epitaxial pulsep laser crystallization of amorphous germanium on GaAs
- Pulsed laser crystallization of SiGe alloys on GaAs
- AIN aloys prepared by reactive radio frequency sputtering
- Optical study of thermally annealed Er-doped hydrogenated a-Si films
- Photoelectron spectroscopic study of amoprhous GaAsN films
- Optoelectronic properties of Er-doped amorphous GaAsN films
- Microcrystalline silicon with high electron field-effect mobility deposited at '230 GRAUS'
- Espectroscopia óptica de vidros fluoroindatos dopados com íons 'Er POT.3+' e 'Yb POT.3+'
- Comment on "Ion-assisted pulsed laser deposition of aluminum nitride thin films" [J. Appl. Phys. 87 1540 (2000)]
- Photoluminescence of Sm and Er doped amorphous AIN
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