Pulsed laser crystallization of SiGe alloys on GaAs (2001)
- Authors:
- USP affiliated authors: ZANATTA, ANTONIO RICARDO - IFSC
- Unidades: IFSC
- Subjects: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Program and abstracts
- Conference title: Brazilian Workshop on Semiconductor Physics
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ABNT
DONDEO, F; SANTOS, Paulo V; TRAMPERT, A; et al. Pulsed laser crystallization of SiGe alloys on GaAs. Anais.. Guarujá: [s.n.], 2001. -
APA
Dondeo, F., Santos, P. V., Trampert, A., Zanatta, A. R., Comedi, D., & Chambouleyron, I. (2001). Pulsed laser crystallization of SiGe alloys on GaAs. In Program and abstracts. Guarujá. -
NLM
Dondeo F, Santos PV, Trampert A, Zanatta AR, Comedi D, Chambouleyron I. Pulsed laser crystallization of SiGe alloys on GaAs. Program and abstracts. 2001 ; -
Vancouver
Dondeo F, Santos PV, Trampert A, Zanatta AR, Comedi D, Chambouleyron I. Pulsed laser crystallization of SiGe alloys on GaAs. Program and abstracts. 2001 ; - Whitish light-emitting ZnO micro-flakes: their production and optical properties
- X-ray photoelectron spectroscopy of amorphous A1N alloys prepared by reactive rf sputtering
- Photoluminescence of a-GeN alloys doped with different rare-earth ions
- Effect of Ga incorporation on photoinduced phenomena in Ge-S glasses
- Photoelectron spectroscopic investigation of Mn-containing amorphous silicon and germanium films
- Concentration quenching of the green photoluminescence from terbium ions embedded in AlN and SiC matrices
- Concentration quenching and thermal activation of the luminescence from terbium-doped a-SiC:H and c-AlN thin films
- Formation of silicon nanocrystals in Si'O IND.2' by oxireduction reaction indeced by impurity implantation and annealing
- Enhancement of optical absorption by modulation of the oxygen flow of 'TI''O IND. 2' films deposited by reactive sputtering
- Exponential depletion of neutral dangling bonds density ('D POT. 0') by rare-earth doping inamorphous 'SI' films
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