Defect simulation in KBr, KCL and KI doped with 'Ge POT.2+', 'Ga POT.+' and 'Sn POT.2+'

Defect simulation in KBr, KCL and KI doped with 'Ge POT.2+', 'Ga POT.+' and 'Sn POT.2+' (1999)

Authors:
- Souza, S S de
- Blak, Ana Regina
Autor USP: BLAK, ANA REGINA - IF
Unidade: IF
Subjects: FÍSICA NUCLEAR; FÍSICA
Language: Inglês
Imprenta:
- Publisher place: London
- Date published: 1999
Source:
- Título: Radiation Effects and Defects in Solids
- Volume/Número/Paginação/Ano: v. 151, n. 1-4, p. 255-259, 1999

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ABNT

SOUZA, S S de e BLAK, Ana Regina. Defect simulation in KBr, KCL and KI doped with 'Ge POT.2+', 'Ga POT.+' and 'Sn POT.2+'. Radiation Effects and Defects in Solids, v. 151, n. 1-4, p. 255-259, 1999Tradução . . Acesso em: 21 fev. 2026.
APA

Souza, S. S. de, & Blak, A. R. (1999). Defect simulation in KBr, KCL and KI doped with 'Ge POT.2+', 'Ga POT.+' and 'Sn POT.2+'. Radiation Effects and Defects in Solids, 151( 1-4), 255-259.
NLM

Souza SS de, Blak AR. Defect simulation in KBr, KCL and KI doped with 'Ge POT.2+', 'Ga POT.+' and 'Sn POT.2+'. Radiation Effects and Defects in Solids. 1999 ; 151( 1-4): 255-259.[citado 2026 fev. 21 ]
Vancouver

Souza SS de, Blak AR. Defect simulation in KBr, KCL and KI doped with 'Ge POT.2+', 'Ga POT.+' and 'Sn POT.2+'. Radiation Effects and Defects in Solids. 1999 ; 151( 1-4): 255-259.[citado 2026 fev. 21 ]