Optoelectronic properties of Er-doped amorphous GaAsN films (2000)
- Autor:
- Autor USP: ZANATTA, ANTONIO RICARDO - IFSC
- Unidade: IFSC
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Publisher: Sociedade Brasileira de Física
- Publisher place: São Paulo
- Date published: 2000
- Source:
- Título do periódico: Resumo
- Conference titles: Encontro Nacional de Física da Matéria Condensada
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ABNT
ZANATTA, Antonio Ricardo. Optoelectronic properties of Er-doped amorphous GaAsN films. 2000, Anais.. São Paulo: Sociedade Brasileira de Física, 2000. . Acesso em: 23 abr. 2024. -
APA
Zanatta, A. R. (2000). Optoelectronic properties of Er-doped amorphous GaAsN films. In Resumo. São Paulo: Sociedade Brasileira de Física. -
NLM
Zanatta AR. Optoelectronic properties of Er-doped amorphous GaAsN films. Resumo. 2000 ;[citado 2024 abr. 23 ] -
Vancouver
Zanatta AR. Optoelectronic properties of Er-doped amorphous GaAsN films. Resumo. 2000 ;[citado 2024 abr. 23 ] - Structural investigation of cobalt oxide films grown by reactive DC magnetron sputtering
- Espectroscopia óptica de vidros fluoroindatos dopados com íons 'Er POT.3+' e 'Yb POT.3+'
- AIN aloys prepared by reactive radio frequency sputtering
- Pulsed laser crystallization of SiGe alloys on GaAs
- Photoluminescence of Sm and Er doped amorphous AIN
- Photoelectron spectroscopic study of amoprhous GaAsN films
- Microcrystalline silicon with high electron field-effect mobility deposited at '230 GRAUS'
- Laser-induced generation of micrometer-sized luminescent patterns on rare-earth-doped amorphous films
- Photon and electron excitation of rare-earth-doped amorphous SiN films
- Photoelectron spectroscopic investigation of Mn-containing amorphous silicon and germanium films
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