Initial stages of Ge growth on Si(100): ad-atoms, ad-dimers, and ad-trimers (1999)
- Authors:
- USP affiliated author: FAZZIO, ADALBERTO - IF
- School: IF
- DOI: 10.1016/s0921-4526(99)00580-3
- Subject: FÍSICA
- Language: Inglês
- Imprenta:
- Source:
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
DALPIAN, G. M.; JANOTTI, A.; FAZZIO, Adalberto; SILVA, Antônio J. R. da. Initial stages of Ge growth on Si(100): ad-atoms, ad-dimers, and ad-trimers. Physica B, Amsterdam, v. 273-274, p. 589-592, 1999. DOI: 10.1016/s0921-4526(99)00580-3. -
APA
Dalpian, G. M., Janotti, A., Fazzio, A., & Silva, A. J. R. da. (1999). Initial stages of Ge growth on Si(100): ad-atoms, ad-dimers, and ad-trimers. Physica B, 273-274, 589-592. doi:10.1016/s0921-4526(99)00580-3 -
NLM
Dalpian GM, Janotti A, Fazzio A, Silva AJR da. Initial stages of Ge growth on Si(100): ad-atoms, ad-dimers, and ad-trimers. Physica B. 1999 ; 273-274 589-592. -
Vancouver
Dalpian GM, Janotti A, Fazzio A, Silva AJR da. Initial stages of Ge growth on Si(100): ad-atoms, ad-dimers, and ad-trimers. Physica B. 1999 ; 273-274 589-592. - Theoretical study of natives defects in BN-nanotubes
- Vacancies in amorphous silicon: a first principles study
- Ab initio studyof '90 IND.0' partial dislocation in silicon
- Metal-semiconducting behavior of carbon nanotubes adsorbed on hidrogeneted Si(100) surfaces
- Theoretical study of "NH IND.3" sensors based on "CN IND.x" nanotubes
- Surpresas na física do estado solído
- Spin-texture and magnetic anisotropy of 'CO' adsorbed 'BI'IND. 2''SE' IND. 3' topological insulator surfaces
- Carrier-mediated magnetism in transition metal doped 'BI' IND. 2''SE' IND. 3' topological insulator
- Topological phases in 2D-graphene-likes materials
- Tuning low-spin to high-spin 'MN' pairs in 2-D 'ZN''O' by injecting holes
Informações sobre o DOI: 10.1016/s0921-4526(99)00580-3 (Fonte: oaDOI API)
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