Ab initio study of group V elements in amorphous silicon (1998)
- Authors:
- Autor USP: FAZZIO, ADALBERTO - IF
- Unidade: IF
- Assunto: QUÍMICA
- Language: Inglês
- Imprenta:
- Publisher: North-Holland
- Publisher place: Amsterdam
- Date published: 1998
- Source:
- Título do periódico: Journal Non-Crystalline Solids
- Volume/Número/Paginação/Ano: v. 227-230, pt. A, p. 372-375, 1998
- Conference titles: International Conference on Amorphous and Microcrystalline Semiconductors - Science and Technology - ICAMS
-
ABNT
FAZZIO, Adalberto e VENEZUELA, P. Ab initio study of group V elements in amorphous silicon. Journal Non-Crystalline Solids. Amsterdam: North-Holland. . Acesso em: 19 mar. 2024. , 1998 -
APA
Fazzio, A., & Venezuela, P. (1998). Ab initio study of group V elements in amorphous silicon. Journal Non-Crystalline Solids. Amsterdam: North-Holland. -
NLM
Fazzio A, Venezuela P. Ab initio study of group V elements in amorphous silicon. Journal Non-Crystalline Solids. 1998 ; 227-230 372-375.[citado 2024 mar. 19 ] -
Vancouver
Fazzio A, Venezuela P. Ab initio study of group V elements in amorphous silicon. Journal Non-Crystalline Solids. 1998 ; 227-230 372-375.[citado 2024 mar. 19 ] - Spectral distribution of photoionization cross section of 'FE POT.2+' in inp: 'FE'
- Terras raras em gap
- Estrutura eletronica e geometrica dos clusters de 'GA IND.N' 'AS IND.M' (n,m = 1-3)
- Estrutura eletronica da microestrutura: 'GA IND.N' 'AS IND.M'
- Role played by n and n-n impurities in type-'IV' semiconductors
- Theoretical investigation of the optical spectra of superconducting 'YBA IND.2''CU IND.3''O IND.7'
- Electronic structure of periodically 'SI'-'GAMA'-doped'GA''AS'
- Theoretical investigation of '3D POT.N' and '4D POT.N' impurities in gan
- Optical transitions in ruby across the corundum to 'Rh IND.2''O IND.3' (II) phase transformation
- Gap e 'GA''AS' dopados com 'V POT.2+': baixo spin x alto spin
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