Optimization of MBE-grown of distributed Bragg reflectors for the fabrication optical devices (1997)
- Authors:
- USP affiliated authors: LEITE, JOSE ROBERTO - IF ; QUIVY, ALAIN ANDRE - IF
- Unidade: IF
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Publisher: Sociedade Brasileira de Física
- Publisher place: São Paulo
- Date published: 1997
- Source:
- Título: Resumos
- Conference titles: Encontro Nacional de Física da Matéria Condensada
-
ABNT
SPERANDIO, Alexander Luz e QUIVY, A. A. e LEITE, J. R. Optimization of MBE-grown of distributed Bragg reflectors for the fabrication optical devices. 1997, Anais.. São Paulo: Sociedade Brasileira de Física, 1997. . Acesso em: 17 maio 2025. -
APA
Sperandio, A. L., Quivy, A. A., & Leite, J. R. (1997). Optimization of MBE-grown of distributed Bragg reflectors for the fabrication optical devices. In Resumos. São Paulo: Sociedade Brasileira de Física. -
NLM
Sperandio AL, Quivy AA, Leite JR. Optimization of MBE-grown of distributed Bragg reflectors for the fabrication optical devices. Resumos. 1997 ;[citado 2025 maio 17 ] -
Vancouver
Sperandio AL, Quivy AA, Leite JR. Optimization of MBE-grown of distributed Bragg reflectors for the fabrication optical devices. Resumos. 1997 ;[citado 2025 maio 17 ] - Pocos quanticos de i 'N IND.0,15' 'GA IND.0,85' 'AS' / 'GA''AS' com dopagem planar de 'SI' no centro
- Spatial confinement of self-organized MBE-growth 'In IND.x''Ga IND.1-X' As quantum dots
- Estudo da difusão de portadores em poços quânticos de InGaAs/GaAs crescidos sobre substratos vicinais de GaAs (001)
- Carbon doping of GaAs and AlGaAs layers grown on (100) and (311) substrates by molecular beam epitaxy
- Ex-situ investigation of indium segregation in InGaAs/GaAs quantum wells using high-resolution x-ray diffraction
- Crescimento e caracterizacao optica de heteroestrutura de 'AL IND.X'ga ind.1-x''as' / 'ga''as' E 'in ind.Y''ga ind.1-y''as' / 'ga''as'
- Investigation of the photoluminescence linewidth broadening in symmetric and asymmetric in 'GA''AS' / 'GA''AS' n-type 'GAMA'-doped quantum wells
- Fabrication of indenpendent contacts to two closely spaced delta-doped GaAs layers
- Step-bunching instability in InGaAs/GaAs quantum wells grown on GaAs(001) vicinal surfaces by molecular beam epitaxy
- Investigation of optical and structural properties of 'In IND.X' Ga IND.1-X' As/GaAs quantum wells grown on vicinal GaAs(001) substrates
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