Introduction to the SOI MOSFET dimension in the high-temperature leakage drain current model (1997)
- Authors:
- USP affiliated author: MARTINO, JOÃO ANTONIO - EP
- School: EP
- Subject: CIRCUITOS INTEGRADOS
- Language: Inglês
- Imprenta:
-
ABNT
BELLODI, Marcello; MARTINO, João Antonio. Introduction to the SOI MOSFET dimension in the high-temperature leakage drain current model. [S.l: s.n.], 1997. -
APA
Bellodi, M., & Martino, J. A. (1997). Introduction to the SOI MOSFET dimension in the high-temperature leakage drain current model. São Paulo: EPUSP. -
NLM
Bellodi M, Martino JA. Introduction to the SOI MOSFET dimension in the high-temperature leakage drain current model. 1997 ; -
Vancouver
Bellodi M, Martino JA. Introduction to the SOI MOSFET dimension in the high-temperature leakage drain current model. 1997 ; - Temperature influences on the drain leakage current behavior in graded-channel SOI nMOSFETs
- Caracterização elétrica de dispositivos SOI MOS em baixa temperatura
- Projeto de processos de fabricação avançados aplicáveis nas tecnologias CMOS micrométricas
- Analysis of the linear kink effect in partially depleted SOI nMOSFETs
- Low-Frequency noise behaviour of bulk and DTMOS triple-gate devices under 60 MeV proton irradiaton
- Low frequency noise assessment in advanced UTBOX SOI n-channel MOSFETs
- Low-Frequency Noise Studies on Fully Depleted UTBOX Silicon-on-Insulator nMOSFETs: Challenges and Opportunities
- Understanding and optimizing the floating body retention in FDSOI UTBOX
- Halo optimization for 0.13 micron SOI CMOS technology
- Analog performance of dynamic threshold voltage SOI MOSFET
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