Introduction to the SOI MOSFET dimension in the high-temperature leakage drain current model (1997)
- Authors:
- Autor USP: MARTINO, JOAO ANTONIO - EP
- Unidade: EP
- Assunto: CIRCUITOS INTEGRADOS
- Language: Inglês
- Imprenta:
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ABNT
BELLODI, M; MARTINO, João Antonio. Introduction to the SOI MOSFET dimension in the high-temperature leakage drain current model. [S.l: s.n.], 1997. -
APA
Bellodi, M., & Martino, J. A. (1997). Introduction to the SOI MOSFET dimension in the high-temperature leakage drain current model. São Paulo: EPUSP. -
NLM
Bellodi M, Martino JA. Introduction to the SOI MOSFET dimension in the high-temperature leakage drain current model. 1997 ; -
Vancouver
Bellodi M, Martino JA. Introduction to the SOI MOSFET dimension in the high-temperature leakage drain current model. 1997 ; - Low-Frequency noise behaviour of bulk and DTMOS triple-gate devices under 60 MeV proton irradiaton
- Extraction of the oxide charge density at front and back interfaces of SOI NMOSFET devices
- Components of the leakage current in enhancement-mode SOI nMOSFETs at high temperature. (em CD-Rom)
- A new method for determination of the oxide charge density at the buried oxide/substrate interface in SOI capacitor
- A novel leakage drain current model for SOI MOSFETs devices at high temperature
- A physically-based continuous model for graded-channel SOI MOSFET
- Transistor soi-nmosfet nao auto-alinhado
- Metodo simples para a obtencao da densidade de armadilhas na primeira e segunda interface em soi-mosfet
- Impact of substrate effect on the fully depleted soi mesfet subthreshold slope at 300k and 77k
- Influencia da temperatura em transistores soi (silicon on insulator) mosfets
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