Growth of Self-Organized 'InGaAs' Islands by Molecular Beam Epitaxy (1997)
- Authors:
- USP affiliated authors: LEITE, JOSE ROBERTO - IF ; QUIVY, ALAIN ANDRE - IF
- School: IF
- Subject: MATÉRIA CONDENSADA
- Language: Inglês
- Source:
- Título do periódico: Brazilian Journal of Physics
- Volume/Número/Paginação/Ano: v. 27/A, n. 4, p. 154-157, 1997
-
ABNT
QUIVY, A. A.; COTTA, M A; LEITE, J. R. Growth of Self-Organized 'InGaAs' Islands by Molecular Beam Epitaxy. Brazilian Journal of Physics[S.l.], v. 27/A, n. 4, p. 154-157, 1997. -
APA
Quivy, A. A., Cotta, M. A., & Leite, J. R. (1997). Growth of Self-Organized 'InGaAs' Islands by Molecular Beam Epitaxy. Brazilian Journal of Physics, 27/A( 4), 154-157. -
NLM
Quivy AA, Cotta MA, Leite JR. Growth of Self-Organized 'InGaAs' Islands by Molecular Beam Epitaxy. Brazilian Journal of Physics. 1997 ; 27/A( 4): 154-157. -
Vancouver
Quivy AA, Cotta MA, Leite JR. Growth of Self-Organized 'InGaAs' Islands by Molecular Beam Epitaxy. Brazilian Journal of Physics. 1997 ; 27/A( 4): 154-157. - Carbon doping of GaAs and AlGaAs layers grown on (100) and (311) substrates by molecular beam epitaxy
- Estudo da difusão de portadores em poços quânticos de InGaAs/GaAs crescidos sobre substratos vicinais de GaAs (001)
- Pocos quanticos de i 'N IND.0,15' 'GA IND.0,85' 'AS' / 'GA''AS' com dopagem planar de 'SI' no centro
- Ex-situ investigation of indium segregation in InGaAs/GaAs quantum wells using high-resolution x-ray diffraction
- Spatial confinement of self-organized MBE-growth 'In IND.x''Ga IND.1-X' As quantum dots
- Energy transfer in small lens-shaped in as quantum dots observed by microluminescence image
- Characterization of distributed Bragg reflectors and vertical-cavity semiconductor structures by modulation spectroscopy
- Growth of 'SI' gama-doping superlattice in 'GA''AS'
- Carrier diffusion in InGaAs/GaAs quantum wells grow on vicinal GaAs(001) substrates
- Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces
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